TIP41A / TIP41B / TIP41C — NPN Epitaxial Silicon Transistor
Publication Order Number:
TIP41C/D
© 2000 Semiconductor Components Industries, LLC.
November-2017,Rev. 2
TIP41A / TIP41B / TIP41C
NPN Epitaxial Silicon Transistor
Features
• Medium Power Linear Switching Applications
• Complement to TIP42 Series
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating co nd itions and stressi ng the part s to these levels is n ot re co mme nded. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP41A TIP41A TO-220 3L (Single Gauge) Bulk
TIP41B TIP41B TO-220 3L (Single Gauge) Bulk
TIP41C TIP41C TO-220 3L (Single Gauge) Bulk
TIP41CTU TIP41C TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage TIP41A 60 VTIP41B 80
TIP41C 100
VCEO Collector-Emitter Voltage TIP41A 60 VTIP41B 80
TIP41C 100
VEBO Emitter-Base Voltage 5 V
ICCollector Current (DC) 6 A
ICP Collector Current (Pulse) 10 A
IBBase Current 2 A
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
TIP41A / TIP41B / TIP41C — NPN Epitaxial Silicon Transistor
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Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter Value Unit
PC Collector Dissipation (TC = 25°C) 65 W
Collector Dissipation (TA = 25°C) 2
Symbol Parameter Conditions Min. Max. Unit
VCEO(sus) Collector-Emitter Sustaining
Voltage(1)
TIP41A IC = 30 mA, IB = 0 60 VTIP41B 80
TIP41C 100
ICEO Collector Cut-Off Current TIP41A VCE = 30 V, IB = 00.7
mA
TIP41B /
TIP41C VCE = 60 V, IB = 0 0.7
ICES Collector Cut-Off Current TIP41A VCE = 60 V, VEB = 0 400
μATIP41B VCE = 80 V, VEB = 0 400
TIP41C VCE = 100 V, VEB = 0 400
IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 1 mA
hFE DC Current Gain(1) VCE = 4 V, IC = 0.3 A 30
VCE = 4 V, IC = 3 A 15 75
VCE(sat) Collector-Emitter Saturation Voltage(1) IC = 6 A, IB = 600 mA 1.5 V
VBE(on) Base-Emitter On Voltage(1) VCE = 4 V, IC = 6 A 2.0 V
fT Current Gain Bandwidth Product VCE = 10 V, IC = 500 mA,
f = 1 MHz 3.0 MHz
TIP41A / TIP41B / TIP41C — NPN Epitaxial Silicon Transistor
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Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
1 10 100 1000 10000
1
10
100
1000 VCE = 4V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000 10000
10
100
1000
10000 IC/IB = 10
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
1 10 100
0.1
1
10
100
TIP41C VCEO MAX.
TIP41B VCEO MA X.
TIP41A VCEO MAX.
TIP41 VCEO MAX.
IC(MAX) (DC)
IC(MAX) (PULSE)
5ms
1ms
0.5ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTO R-E MITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP41A / TIP41B / TIP41C — NPN Epitaxial Silicon Transistor
www.onsemi.com
4
Physical Dimensions
Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
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