NPN DIFFUSED JUNCTION TABLE 1-NPN SILICON DIFFUSED JUNCTION TRANSISTORS The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical application areas include a wide variety of power switching and linear applications such as regulators, inverters, audio-output stages and solenoid drivers. The devices are listed in order of decreasing Collector Current (Ic(max)), Breakdown Voltages, Power Dissipation (Prot) etc. hee at Prot Type Ictmax) Vcso Veco at Tcase Package le = 25C A Vv Vv min. max. A w 2N6103 16 45 40 15 60 8 75 TO-220 2N3055 15 100 60 20 70 4 115 TO-3 FGT3055 15 100 60 20 70 4 75 TO-220 2N3442 10 160 140 20 70 3 117 TO-3 2N6101 10 80 70 20 80 5 75 TO-220 2N6099 10 70 60 20 80 4 75 TO-220 2N3054 4 90 55 25 150 0.5 25 TO-66 2N3441 3 160 140 25 100 0.5 25 TO-66 P2 TO-66 HIGH VOLTAGE NPN HIGH VOLTAGE SELECTOR CHART Package TO-39 TO-66 TO-3 le <2A 2-5A 10A Veco Volts 140 2N3441 2N3442 175 2N3583 250 2N3440 2N3584 300 2N3585 350 2N3439 TABLE 5 NPN HIGH VOLTAGE TRANSISTORS The transistors shown in this table are characterised for high voltage operation in industrial, commercial and military equipments. Typical application areas include differential and operational amplifiers, inverters, inductive switching and series regulators. The devices are listed in order of decreasing Collector Current (lcimax)), Breakdown Voltages, Power Dissipation (P,o,) etc. Vcetsat) hre Prot le at at at Type (Max) | Veso | Vceo Toase Package cont. le lp Ic | =25C A Vv Vv Vv A mA | Min | Max A WwW 2N3442 10 160 160* 1 3 300 | 20 70 3 117 TO-3 2N3441 3 160 160* 1 0.5 | 50 25 | 100 | 0.5 25 TO-66 2N3585 2 500 300 0.75 1 125 | 25 | 100 1 35 TO-66 2N3584 2 375 | 250 0.75 1 125 | 25 | 100 1 35 TO-66 2N3583 2 250 175 0.75 1 125 |; 10 _ 1 35 TO-66 2N3439 1 450 | 350 0.5 | 0.05 | 4 40 | 160 | 0.02 10 TO-39 2N3440 1 300 | 250 0.5 | 0.05 | 4 40 | 160 | 0.02 10 TO-39 *Vcex [Typical he P8