
K3P7V(U)1000B-YC CMOS MASK ROM
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
The K3P7V(U)1000B-YC is a fully static mask programmable
ROM fabricated using silicon gate CMOS process technology,
and is organized either as 8,388,608 x 8 bit(byte mode) or as
4,194,304 x 16 bit(word mode) depending on BHE voltage
level.(See mode selection table)
This device includes page read mode function, page read mode
allows 8 words (or 16 bytes) of data to read fast in the same
page, CE and A3 ~ A21 should not be changed.
This device operates with 3.0V or 3.3V power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The K3P7V(U)1000B-YC is packaged in a 48-TSOP1.
GENERAL DESCRIPTIONFEATURES
• Switchable organization
8,388,608 x 8(byte mode)
4,194,304 x 16(word mode)
• Fast access time
Random Access Time/Page Access Time
3.3V Operation : 100/30ns(Max.)@CL=50pF,
120/40ns(Max.)@CL=100pF
3.0V Operation : 120/40ns(Max.)@CL=100pF
8 Words / 16 Bytes page access
• Supply voltage : single +3.0V/ single +3.3V
• Current consumption
Operating : 60mA(Max.)
Standby : 50µA(Max.)
• Fully static operation
• All inputs and outputs TTL compatible
• Three state outputs
• Package
K3P7V(U)1000B-YC : 48-TSOP1-1218
A21 X
A0~A2
AND
DECODER
BUFFERS
A3
Y
AND
DECODER
BUFFERS
MEMORY CELL
SENSE AMP.
CONTROL
LOGIC
MATRIX
(4,194,304x16/
8,388,608x8)
DATA OUT
BUFFERS
A-1
CE
OE
BHE
.
.
.
.
.
.
.
.
Q0/Q8Q7/Q15
. . .
FUNCTIONAL BLOCK DIAGRAM
Pin Name Pin Function
A0 - A2Page Address Inputs
A3 - A21 Address Inputs
Q0 - Q14 Data Outputs
Q15 /A-1 Output 15(Word mode)/
LSB Address(Byte mode)
BHE Word/Byte selection
CE Chip Enable
OE Output Enable
VCC Power
Vss Ground
N.C No Connection