MBR10200CT MBRB10200CT MBR10200CT-1 SENSITRON SEMICONDUCTOR Technical Data 3267, Rev. A Data Sheet MBR10200CT/MBRB10200CT/MBR10200CT-1 SCHOTTKY RECTIFIER Applications: * Switching power supply * Converters * Free-Wheeling diodes * Reverse battery protection Features: * 175 C TJ operation * Center tap configuration * Low forward voltage drop * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * High frequency operation * Guard ring for enhanced ruggedness and long term reliability MBR10200CT MBRB10200CT MBR10200CT Mechanical Dimensions: In Inches / mm TO-220AB * 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 * World Wide Web Site - http://www.sensitron.com * E-Mail Address - sales@sensitron.com * * MBR10200CT SENSITRON MBRB10200CT SEMICONDUCTOR MBR10200CT-1 Data Sheet 3267, Rev. A 242-9798 FAX * * 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 * World Wide Web Site - http://www.sensitron.com * E-Mail Address - sales@sensitron.com * MBR10200CT MBRB10200CT MBR10200CT-1 SENSITRON SEMICONDUCTOR Data Sheet 3267, Rev. A Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Max. Peak One Cycle NonRepetitive Surge Current (per leg) Symbol VRWM IF(AV) Condition 50% duty cycle @TC =155C, rectangular wave form Max. 200 5(Per leg) 10(Per device) Units V A 8.3 ms, half Sine pulse 128 A Symbol VF1 Condition @ 5 A, Pulse, TJ = 25 C Max. 0.98 Units V VF2 @ 5 A, Pulse, TJ = 125 C 0.78 V IR1 @VR = rated VR TJ = 25 C @VR = rated VR TJ = 125 C @VR = 5V, TC = 25 C fSIG = 1MHz Measured lead to lead 5 mm from package body - 0.05 mA 7 mA 150 pF 8.0 nH 10,000 V/s IFSM Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg)* Max. Reverse Current (per leg)* IR2 Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change * CT LS dv/dt Pulse Width < 300s, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case (per leg) Maximum Thermal Resistance Junction to Case (per package) Maximum Thermal Resistance, Case to Heat Sink Approximate Weight Mounting Torque Case Style Symbol TJ Tstg RJC Condition DC operation Specification -55 to +175 -55 to +175 3.5 Units C C C/W RJC DC operation 1.75 C/W RCS Mounting surface, smooth and greased (only for TO-220) - 0.50 C/W wt TM 2 6(Min.) 12(Max.) TO-220AB D2PAK TO-262 g Kg-cm * 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 * * World Wide Web Site - http://www.sensitron.com * E-Mail Address - sales@sensitron.com * MBR10200CT MBRB10200CT MBR10200CT-1 SENSITRON SEMICONDUCTOR Data Sheet 3267, Rev. A Typical Reverse Characteristics Typical Forward Characteristics 101 200 C 1 Instantaneous Reverse Current - I R (mA) 10 175 C 0 10 10-1 150 C 10-1 125 C 100 C 10-2 75 C 10-3 50 C -4 10 25 C 10-5 125 C 0 40 80 120 160 Reverse Voltage - VR (V) 200 240 Typical Junction Capacitance 25 C -2 10 10-3 0.0 0.2 0.4 0.6 0.8 Forward Voltage Drop - VF (V) 1.0 Junction Capacitance - CT (pF) Instantaneous Forward Current - I F (A) 200 C 175 C 100 120 80 25 C 40 0 0 40 80 120 160 Reverse Voltage - VR (V) 200 240 * 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 * * World Wide Web Site - http://www.sensitron.com * E-Mail Address - sales@sensitron.com * SENSITRON SEMICONDUCTOR MBR10200CT MBRB10200CT MBR10200CT-1 Data Sheet 3267, Rev. A DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve product characteristics. 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