
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL NONETEST CONDITIONS MINIMUM
TYPICAL
MAXIMUM
UNITS
BVCEO IC = 200 mA 36 V
BVCES IC = 200 mA 65 V
BVEBO IE = 10 mA 4.0 V
ICES VCE = 28 V 10 mA
hFE VCE = 5.0 V IC = 500 mA 5.0 --- ---
COB VCB = 28 V f = 1.0 MHz
200 pF
PG
ηηC VCC = 28 V POUT = 80 W f = 88 MHz 10
60 dB
%
NPN SILICON RF POWER TRANSISTOR
VMB80-28F
The ASI VMB80-28F is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 9.0 A
VCBO
65 V
VCEO 36 V
VEBO 4.0 V
PDISS
103 W @ TC = 25 OC
TJ -65 OC to +200 OC
TSTG -65 OC to +150 OC
θθJC 1.05 OC/W
PACKAGE STYLE .380 4L FLG
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H.160 / 4.06 .180 / 4.57
DIM
.220 / 5.59 .230 / 5.84
.105 / 2.67.085 / 2.16
I
J.240 / 6.10 .255 / 6.48
.785 / 19.94
F
B
G
.125
Ø.125 NOM.
FULL R
D E
C
H
.112 x 45° A
I
J
.004 / 0.10 .006 / 0.15
.280 / 7.11
.720 / 18.29 .730 / 18.54