(INTERSIL 2N5638-2N5640 N-Channel JFET FEATURES Economy Packaging Fast Switching t, <5ns (2N5638) Low Drain-Source ON Resistance < 30 Q (2N5638) ABSOLUTE MAXIMUM RATINGS Drain-Source Breakdown Voltage 30 V. Drain-Gate Breakdown Voltage 30 V Source-Gate Breakdown Voltage 30 V Forward Gate Current 10 mA Total Device Dissipation at 25C 310 mW Derate above 25C 2.82 mw/C Operating Junction Temperature Range ~65 to +135C Storage Temperature Range ~65 to +150C PIN CHIP CONFIGURATION TOPOGRAPHY TO-92 5001B tors :oman 7 or [pore SUBSTRATE IS GATE NS T ow 9122 023 0127 RL 0085, 0036 0035 0026 ota | ow ORDERING INFORMATION TO-92 WAFER DICE 2N5638 | 2N5638/W | 2N5638/D 2N5639 | 2N5639/W | 2N5638/D 2N5640 | 2N5640/W | 2N5640/D ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) 2N5640 CHARACTERISTIC MAX | MIN Reverse - IGss Gate Reverse Current 'Diotf) Drain Cutoff Current VDSion) Drain-Source ON Voltage Common-Source Reverse Transfer NOTE: 1. Pulse test PW < 300 us, duty cycle < 3.0%. Vv Ri * =e -lrpston) +50) ineut (SCOPE A} 10% Vasion) 90% __f ----- Vastott) wnt a} dion) U7 ro tdtoft) 90% % ouTPUT 10% (SCOPE B) 1-88 UNIT TEST CONDITIONS MAX VGs=-15 V, Vps = 0 1 Vps= V6S =~ ~8 V (2N5639), Vos = -6V 6 mA (2N5639), Ip = 3 mA (2N5640} VGs = -12 V, Vips = 0 VGS{on) = 0 ID(on) = 6 mA (2N5639) VGS{off) = -10V ED{on) = 3 mA (2N5640) = 500 Voo =10VOC OT pF o TO 50 OHM SCOPE B [ entnaton| r 2.001 uF s L 1OKLS s @ TO 50 OHM SCOPE A AA Ww son = : SCOPE TEKTRONIX 567A OR EQUIVALENT