BD433/BD435/BD437
NPN Silicon
Power Transistors
Features
• Intended for use in medium power near and switching applications
• With TO-126 package
• The complementary PNP type is BD434, BD436, BD438
Maximum Ratings
Symbol Parameter Rating Unit
VCEO Collector-Emitter Voltage BD433
BD435
BD437
22
32
45
V
VCBO Collector-Base Voltage BD433
BD435
BD437
22
32
45
V
VEBO Emitter-Base Voltage BD433
BD435
BD437 5.0 V
IC Collector Current 4.0 A
PC Collector power dissipation 1.25 W
TJ Junction Temperature -55 to +150 к
TSTG Storage Temperature -55 to +150 к
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=100mAdc, IB=0) BD433
BD435
BD437
22
32
45
---
---
---
Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=100Adc, IE=0) BD433
BD435
BD437
22
32
45
---
---
--- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=100Adc, IC=0) 5 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=22Vdc,IE=0) BD433
(VCB=32Vdc,IE=0) BD435
(VCB=45Vdc,IE=0) BD437
--- 1.0 uAdc
ICEO Collector-Base Cutoff Current
(VCE=22Vdc,IE=0) BD433
(VCE=32Vdc,IE=0) BD435
(VCE=45Vdc,IE=0) BD437
--- 10 uAdc
IEBO Emitter-Base Cutoff Current
(VEB=5.0Vdc, IC=0) --- 1.0 uAdc
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PIN 1. EMITTER
PIN 2. COLLECTOR
12 3
PIN 3. BASE
omponents
20736 Marilla Street Chatsworth
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Revision: 3 2007/05/06
xCase Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
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