December 2005 / B http://takcheong.com
1
Licensed by ON Semiconductor,
A trademark of semiconductor
Components Industries, LLC for
Zener Technology and Products.
TAK CHEON
G
®
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
Maximum Ratings (Note 1)
Rating Symbol Value Units
Maximum Steady State Power Dissipation
@TL75, Lead Length = 3/8”
Derate Above 75
PD
500
4.0
mW
mW/
Operating and Storage
Temperature Range TJ, Tstg -65 to +200 °C
Note 1: Some part number series have lower JEDEC registered ratings.
Specification Features:
Zener Voltage Range = 2.4V to 200V
ESD Rating of Clas 3 (>6 KV) per Human Body Model
DO-35 Package (DO-204AH)
Double Slug Type Construction
Metallurgical Bonded Construction
Specification Features:
Case : Double slug type, hermetically sealed glass
Finish : All external surfaces are corrosion resistant and leads are readily solderable
Polarity : Cathode indicated by polarity band
Mounting: Any
Maximum Lead Temperature for Soldering Purposes
230, 1/16” from the case for 10 seconds
Ordering Information
Device Package Quantity
1N52xxB Axial Lead 3000 Units / Box
1N52xxBRL Axial Lead 5000 Units / Tape & Reel
1N52xxBRL2* Axial Lead 5000 Units / Tape & Reel
1N52xxBRR1 ! Lead Form 3000 Units / Radial Tape & Reel
1N52xxBRR2 i Lead Form 3000 Units / Radial Tape & Reel
1N52xxBTA Axial Lead 5000 Units / Tape & Ammo
1N52xxBTA2* Axial Lead 5000 Units / Tape & Ammo
1N52xxBRA1 ! Axial Lead 3000 Units / Radial Tape & Ammo
1N52xxBRA2 i Axial Lead 3000 Units / Radial Tape & Ammo
* The “2” suffix refer to 26mm tape spacing.
! “1”: Polarity band up with cathode lead off first.
i “2”: Polarity band down with cathode lead off first.
1N5221B through 1N5281B Series
Cathode Anode
L = Logo
52xxB = 1N52xxB Device Code
L
52
xx
B
Devices listed in bold italic are Tak Cheong Preferred
devices. Preferred devices are recommended choices
for future use and best overall value.
AXIAL LEAD
DO35
1N5221B through 1N5281B Series
http://www.takcheong.com
2
ELECTRICAL CHARACTERISTICS (TA = 25ºC unless
otherwise noted. Based on DC measurements at thermal
equilibrium; lead length = 3/8”; thermal resistance of heat sink =
30°C/W, VF = 1.1 V Max @ IF = 200mA for all types)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Zener Current
ZZT Maximum Zener Impedance @ IZT
IZk Reverse Zener Current
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
θVZ Maximum Zener Voltage Temperature Coefficient
ELECTRICAL CHARACTERISTICS (TA = 25ºC unless otherwise noted, VF = 1.1 V Max @ IF = 200mA for all types)
Zener Voltage (Note 3.) Zener Impedance (Note 4.) Leakage Current
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR
θ
θθ
θVZ
(Note 5.)
Device
(Note 2.) Device
Marking Min Nom Max (mA) (
)(
)(mA) (µ
µµ
µA) (Volts) (%/ºC)
1N5221B 1N5221B 2.28 2.4 2.52 20 30 1200 0.25 100 1 -0.085
1N5222B 1N5222B 2.375 2.5 2.625 20 30 1250 0.25 100 1 -0.085
1N5223B 1N5223B 2.565 2.7 2.835 20 30 1300 0.25 75 1 -0.08
1N5224B 1N5224B 2.66 2.8 2.94 20 30 1400 0.25 75 1 -0.08
1N5225B 1N5225B 2.85 3 3.15 20 29 1600 0.25 50 1 -0.075
1N5226B 1N5226B 3.135 3.3 3.465 20 28 1600 0.25 25 1 -0.07
1N5227B 1N5227B 3.42 3.6 3.78 20 24 1700 0.25 15 1 -0.065
1N5228B 1N5228B 3.705 3.9 4.095 20 23 1900 0.25 10 1 -0.06
1N5229B 1N5229B 4.085 4.3 4.515 20 22 2000 0.25 5 1 ±0.055
1N5230B 1N5230B 4.465 4.7 4.935 20 19 1900 0.25 5 2 ±0.03
1N5231B 1N5231B 4.845 5.1 5.355 20 17 1600 0.25 5 2
±
±±
±
0.03
1N5232B 1N5232B 5.32 5.6 5.88 20 11 1600 0.25 5 3 +0.038
1N5233B 1N5233B 5.7 6 6.3 20 7 1600 0.25 5 3.5 +0.038
1N5234B 1N5234B 5.89 6.2 6.51 20 7 1000 0.25 5 4 +0.045
1N5235B 1N5235B 6.46 6.8 7.14 20 5 750 0.25 3 5 +0.05
2. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ)
The type numbers listed have a st andard tolerance on the nominal zener voltage of ±5%.
3. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C
±1°C and 3/8” lead length.
4. ZENER IMPEDANCE (ZZ) DERIVATION
ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current appl i ed. The specified l imits
are for IZ(AC) = 0.1 IZ(DC) with AC frequenc y = 60Hz.
5. TEMPERATURE COEFFICIENT (θ
θθ
θVZ)
Test conditions for temperature coefficient are as follows:
A. IZT = 7.5mA, T1 = 25°C, T2 = 125°C (1N5221B through 1N5242B)
B. IZT = Rated IZT, T1 = 25 °C, T 2 = 125°C (1N5243B through 1N5281B)
Device to be temperature stabilized with current applied prior to reading break down voltage at t he specified am bi ent
temperat ure.
1N5221B through 1N5281B Series
http://www.takcheong.com
3
ELECTRICAL CHARACTERISTICS (TA = 25ºC unless otherwise noted, VF = 1.1 V Max @ IF = 200mA for all types)
Zener Voltage (Note 7.) Zener Impedance (Note 8.) Leakage Current
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR
θ
θθ
θVZ
(Note 9.)
Device
(Note 6.) Device
Marking Min Nom Max (mA) (
)(
)(mA) (µ
µµ
µA) (Volts) (%/ºC)
1N5236B 1N5236B 7.125 7.5 7.875 20 6 500 0.25 3 6 +0.058
1N5237B 1N5237B 7.79 8.2 8.61 20 8 500 0.25 3 6.5 +0.062
1N5238B 1N5238B 8.265 8.7 9.135 20 8 600 0.25 3 6.5 +0.065
1N5239B 1N5239B 8.645 9.1 9.555 20 10 600 0.25 3 7 +0.068
1N5240B 1N5240B 9.5 10 10.5 20 17 600 0.25 3 8 +0.075
1N5241B 1N5241B 10.45 11 11.55 20 22 600 0.25 2 8.4 +0.076
1N5242B 1N5242B 11.4 12 12.6 20 30 600 0.25 1 9.1 +0.077
1N5243B 1N5243B 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 +0.079
1N5244B 1N5244B 13.3 14 14.7 9 15 600 0.25 0.1 10 +0.082
1N5245B 1N5245B 14.25 15 15.75 8.5 16 600 0.25 0.1 11 +0.082
1N5246B 1N5246B 15.2 16 16.8 7.8 17 600 0.25 0.1 12 +0.083
1N5247B 1N5247B 16.15 17 17.85 7.4 19 600 0.25 0.1 13 +0.084
1N5248B 1N5248B 17.1 18 18.9 7 21 600 0.25 0.1 14 +0.085
1N5249B 1N5249B 18.05 19 19.95 6.6 23 600 0.25 0.1 14 +0.086
1N5250B 1N5250B 19 20 21 6.2 25 600 0.25 0.1 15 +0.086
1N5251B 1N5251B 20.9 22 23.1 5.6 29 600 0.25 0.1 17 +0.087
1N5252B 1N5252B 22.8 24 25.2 5.2 33 600 0.25 0.1 18 +0.088
1N5253B 1N5253B 23.75 25 26.25 5 35 600 0.25 0.1 19 +0.089
1N5254B 1N5254B 25.65 27 28.35 4.6 41 600 0.25 0.1 21 +0.09
1N5255B 1N5255B 26.6 28 29.4 4.5 44 600 0.25 0.1 21 +0.091
1N5256B 1N5256B 28.5 30 31.5 4.2 49 600 0.25 0.1 23 +0.091
1N5257B 1N5257B 31.35 33 34.65 3.8 58 700 0.25 0.1 25 +0.092
1N5258B 1N5258B 34.2 36 37.8 3.4 70 700 0.25 0.1 27 +0.093
1N5259B 1N5259B 37.05 39 40.95 3.2 80 800 0.25 0.1 30 +0.094
1N5260B 1N5260B 40.85 43 45.15 3 93 900 0.25 0.1 33 +0.095
1N5261B 1N5261B 44.65 47 49.35 2.7 105 1000 0.25 0.1 36 +0.095
1N5262B 1N5262B 48.45 51 53.55 2.5 125 1100 0.25 0.1 39 +0.096
1N5263B 1N5263B 53.2 56 58.8 2.2 150 1300 0.25 0.1 43 +0.096
1N5264B 1N5264B 57 60 63 2.1 170 1400 0.25 0.1 46 +0.097
1N5265B 1N5265B 58.9 62 65.1 2 185 1400 0.25 0.1 47 +0.097
6. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ)
The type numbers listed have a st andard tolerance on the nominal zener voltage of ±5%.
7. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C
±1°C and 3/8” lead length.
8. ZENER IMPEDANCE (ZZ) DERIVATION
ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current appl i ed. The specified l imits
are for IZ(AC) = 0.1 IZ(DC) with AC frequenc y = 60Hz.
9. TEMPERATURE COEFFICIENT (θ
θθ
θVZ)
Test conditions for temperature coefficient are as follows:
A. IZT = 7.5mA, T1 = 25°C, T2 = 125°C (1N5221B through 1N5242B)
B. IZT = Rated IZT, T1 = 25 °C, T 2 = 125°C (1N5243B through 1N5281B)
Device to be temperature stabilized with current applied prior to reading break down voltage at t he specified am bi ent
temperat ure.
1N5221B through 1N5281B Series
http://www.takcheong.com
4
ELECTRICAL CHARACTERISTICS (TA = 25ºC unless otherwise noted, VF = 1.1 V Max @ IF = 200mA for all types)
Zener Voltage (Note 11.) Zener Impedance (Note 12.) Leakage Current
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR
θ
θθ
θVZ
(Note 13.)
Device
(Note 10.) Device
Marking Min Nom Max (mA) (
)(
)(mA) (µ
µµ
µA) (Volts) (%/ºC)
1N5266B 1N5266B 64.6 68 71.4 1.8 230 1600 0.25 0.1 52 +0.097
1N5267B 1N5267B 71.25 75 78.75 1.7 270 1700 0.25 0.1 56 +0.098
1N5268B 1N5268B 77.9 82 86.1 1.5 330 2000 0.25 0.1 62 +0.098
1N5269B 1N5269B 82.65 87 91.35 1.4 370 2200 0.25 0.1 68 +0.099
1N5270B 1N5270B 86.45 91 95.55 1.4 400 2300 0.25 0.1 69 +0.099
1N5271B 1N5271B 95 100 105 1.3 500 2600 0.25 0.1 76 +0.11
1N5272B 1N5272B 104.5 110 115.5 1.1 750 3000 0.25 0.1 84 +0.11
1N5273B 1N5273B 114 120 126 1 900 4000 0.25 0.1 91 +0.11
1N5274B 1N5274B 123.5 130 136.5 0.95 1100 4500 0.25 0.1 99 +0.11
1N5275B 1N5275B 133 140 147 0.9 1300 4500 0.25 0.1 106 +0.11
1N5276B 1N5276B 142.5 150 157.5 0.85 1500 5000 0.25 0.1 114 +0.11
1N5277B 1N5277B 152 160 168 0.8 1700 5500 0.25 0.1 122 +0.11
1N5278B 1N5278B 161.5 170 178.5 0.74 1900 5500 0.25 0.1 129 +0.11
1N5279B 1N5279B 171 180 189 0.68 2200 6000 0.25 0.1 137 +0.11
1N5280B 1N5280B 180.5 190 199.5 0.66 2400 6500 0.25 0.1 144 +0.11
1N5281B 1N5281B 190 200 210 0.65 2500 7000 0.25 0.1 152 +0.11
10. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ)
The type numbers listed have a standard tolerance on the nominal zener vol tage of ±5%.
11. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (T L) at 30°C
±1°C and 3/8” lead length.
12. ZENER IMPEDANCE (ZZ) DE RIVATION
ZZT and ZZK are measured by divi di ng the AC voltage drop across t he devic e by the AC current appli e d. The specified limits
are for IZ(AC) = 0.1 IZ(DC) with AC frequency = 60Hz.
13. TEMPERATURE COEFFICIENT (θ
θθ
θVZ)
Test conditions for temperat ure coeffici ent are as follows:
A. IZT = 7.5mA, T 1 = 25°C, T2 = 125°C (1N5221B through 1N5242B)
B. IZT = Rated IZT, T 1 = 25°C, T2 = 125°C (1N5243B through 1N5281B)
Device to be temperature stabilized with c urrent appli ed pri or to reading breakdown voltage at the specified ambient
temperature.
1N5221B through 1N5281B Series
http://www.takcheong.com
5
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 20 40 60 80 100 120 140 160 180 200
TL, LEAD TEMPERATURE (°C)
Figure 1. Steady State Power Derating
HEAT
SINKS
3/8" 3/8"
PD, MAXIMUM STEADY STATE
POWER DISSIPATION (WATTS)
1N5221B through 1N5281B Series
http://www.takcheong.com
6
APPLICATION NOTE - ZENER VOLTAGE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA.
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
is the power dissipation. The value for θLA will vary and
depends o n the device mounting method. θLA is generally 30
to 40°C/W for the various clips and tie points in common use
and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of TL, the junction temperature
may be determined by:
TJ = TL + TJL.
TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power:
TJL = θJLPD.
For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ(TJ) may be estimated.
Changes in voltage, VZ, can then be found from:
V = θVZTJ.
θVZ, the zener voltage temperature coefficient, is found
from Figures 4 and 5.
Under high power -pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Surge limitations are given in Figure 7. They are lower
than would be expected by considering only junction
temperature, a s current crowding ef fects cause temperatures
to be extremely high in small spots, resulting in device
degradation should the limits of Figure 7 be exceeded.
LL
500
400
300
200
100
0
0 0.2 0.4 0.6 0.8 1
2.4-60 V
62-200V
L , LEAD LENGTH TO HEAT SINK (INCH)
JL, JUNCTION TOLEAD THERMAL RESISTANCE(°C/W)θ
Figure 2. Typical Thermal Resistance
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
+2C
+12C
1000
7000
5000
2000
1000
700
500
200
100
70
50
20
10
7
5
2
1
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
34 5 6 7 8 9101112
VZ , NOMINAL ZENER VOLTAGE (VOLTS)
I, LEAKAGE CURRENT ( A)µR
Figure 3. Typical Leakage Current
13 14 15
1N5221B through 1N5281B Series
http://www.takcheong.com
7
+12
+10
+8
+6
+4
+2
0
-2
-4
89
VZ , ZENER VOLTAGE (VOLTS)
Figure 4a. Range for Units to 12 Volts
VZ@IZT
(NOTE 2)
RANGE
TEMPERATURE COEFFICIENTS
(-55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)
100
70
50
30
20
10
7
5
3
2
1
26 10 20 30 50 70 100
VZ , ZENER VOLTAGE (VOLTS)
Figure 4b. Range for Units 12 to 100 Volts
RANGE VZ@IZ(NOTE 2)
120 130 140 150 160 170 180 190 200
200
180
160
140
120
100
VZ , ZENER VOLTAGE (VOLTS)
Figure 4c. Range for Units 120 to 200 Volts
VZ @ IZT
(NOTE 2)
+6
+4
+2
0
-2
-4
34
VZ , ZENER VOLTAGE (VOLTS)
Figure 5. Effect of Zener Current
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOL TS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: AFFECT TEMPERATURE COEFFICIENTS
1mA
0.01mA
VZ @ IZ
TA=25 °C
1000
C, CAP ACIT ANCE (pF)
500
200
100
50
20
10
5
2
1
1 2 5 10 20 50 100
VZ, ZENER VOLTAGE (VOLTS)
Figure 6a. Typical Capacitance 2.4-100 Volts
TA = 25°C
0V BIAS
1V BIAS
50% OF
VZBIAS
100
70
50
30
20
10
7
5
3
2
1
120 140 160 180 190 200 220
VZ, ZENER VOLTAGE (VOLTS)
Figure 6b. Typical Capacitance 120-200 Volts
T= 25 °C
1 VOLT BIAS
50% OF V BIAS
0 BIAS
θVZ
,
TEMPERA TURE COEFFICIENT (mV/ °C)
20mA
C, CAP ACIT ANCE (pF) θVZ
,
TEMPERATURE COEFFICIENT (mV/ °C)θVZ
,
TEMPERATURE COEFFICIENT (mV/°C)
θVZ, TEMPERA TURE COEFFICIENT (mV/°C)
345 710
11 12
5678
1N5221B through 1N5281B Series
http://www.takcheong.com
8
100
70
50
30
20
10
7
5
3
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
Ppk , PEAK SURGE POWER (WATTS)
PW, PULSE WIDTH (ms)
5% DUTY CYCLE
10% DUTY CYCLE
20% DUTY CYCLE
11V-91V NONREPETITIVE
1.8V-10V NONREPETITIVE
RECT ANGULAR
WAVEFORM
TJ= 25°C PRIOR TO
INITIAL PULSE
Figure 7a. Maximum Surge Power 1.8-91 Volts
1000
700
500
300
200
100
70
50
30
20
10
7
5
3
2
1
0.01 0.1 1 10 100 1000
Ppk , PEAK SURGE POWER (WATTS)
PW, PULSE WIDTH (ms)
Figure 7b. Maximum Surge Power DO-35
100-200Volts
1000
500
200
100
50
20
10
1
2
5
0.1 0.2 0.5 1 2 5 10 20 50 100
IZ , ZENER CURRENT (mA)
Figure 8. Effect of Zener Current on
Zener Impedance
ZZ, DYNAMIC IMPEDANCE (OHMS)
ZZ, DYNAMIC IMPEDANCE (OHMS)
1000
700
500
200
100
70
50
20
10
7
5
2
1
1 2 3 5 7 10 20 30 50 70 100
VZ, ZENER VOLTAGE (VOLTS)
Figure 9. Effect of Zener Voltage on Zener Impedance Figure 10. T ypical Forward Characteristics
RECT ANGULAR
WAVEFORM, TJ = 25°C
100-200VOLTS NONREPETITIVE
TJ= 25°C
iZ (rms) = 0.1 IZ (dc)
f = 60Hz
IZ=1mA
5mA
20mA
TJ= 25°C
iZ(rms)=0.1 Iz(dc)
f = 60 Hz
VZ = 2.7V
47V
27V
6.2V
VF, FORWARD VOLTAGE (VOLTS)
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
1000
500
200
100
50
20
10
5
2
1
IF, FOR WARD CURRENT (mA)
MINIMUM
MAXIMUM
150 °C
75°C
0°C
25°C
1N5221B through 1N5281B Series
http://www.takcheong.com
9
Figure 1 1. Zener Voltage versus Zener Current - VZ = 1 thru 16 Volts
VZ, ZENER VOLTAGE (VOLTS)
IZ, ZENER CURRENT (mA)
20
10
1
0.1
0.01
12 5 78910111213141516
TA= 25°C
Figure 12. Zener Voltage versus Zener Current - VZ = 15 thru 30 Volts
VZ , ZENER VOLTAGE (VOLTS)
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
10
1
0.1
0.01
TA= 25°C
IZ, ZENER CURRENT (mA)
6
34
1N5221B through 1N5281B Series
http://www.takcheong.com
10
Figure 13. Zener Voltage versus Zener Current - VZ = 30 thru 105 Volts
VZ , ZENER VOLTAGE (VOLTS)
10
1
0.1
0.01
30 35 40 45 50 55 60 70 75 80 85 90 95 100
Figure 14. Zener Voltage versus Zener Current - VZ = 110 thru 220 Volts
VZ, ZENER VOLTAGE (VOLTS)
110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260
10
1
0.1
0.01
TA= 25°
65 105
IZ, ZENER CURRENT (mA)IZ, ZENER CURRENT (mA)