TAK CHEONG Licensed by ON Semiconductor, A trademark of semiconductor Components Industries, LLC for Zener Technology and Products. 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Maximum Ratings (Note 1) Rating Symbol Value Units Maximum Steady State Power Dissipation @TL75, Lead Length = 3/8" PD 500 mW 4.0 mW/ -65 to +200 C Derate Above 75 Operating and Storage Temperature Range TJ, Tstg AXIAL LEAD DO35 Note 1: Some part number series have lower JEDEC registered ratings. Specification Features: Zener Voltage Range = 2.4V to 200V ESD Rating of Clas 3 (>6 KV) per Human Body Model DO-35 Package (DO-204AH) Double Slug Type Construction Metallurgical Bonded Construction Cathode Anode Specification Features: Case : Double slug type, hermetically sealed glass Finish : All external surfaces are corrosion resistant and leads are readily solderable Polarity : Cathode indicated by polarity band Mounting: Any L 52 xx B Maximum Lead Temperature for Soldering Purposes 230, 1/16" from the case for 10 seconds L 52xxB = Logo = 1N52xxB Device Code Ordering Information Device Package Quantity 1N52xxB Axial Lead 3000 Units / Box 1N52xxBRL Axial Lead 5000 Units / Tape & Reel 1N52xxBRL2* Axial Lead 5000 Units / Tape & Reel 1N52xxBRR1 ! Lead Form 3000 Units / Radial Tape & Reel 1N52xxBRR2 i Lead Form 3000 Units / Radial Tape & Reel 1N52xxBTA Axial Lead 5000 Units / Tape & Ammo 1N52xxBTA2* Axial Lead 5000 Units / Tape & Ammo 1N52xxBRA1 ! Axial Lead 3000 Units / Radial Tape & Ammo 1N52xxBRA2 i Axial Lead 3000 Units / Radial Tape & Ammo * The "2" suffix refer to 26mm tape spacing. ! "1": Polarity band up with cathode lead off first. i "2": Polarity band down with cathode lead off first. Devices listed in bold italic are Tak Cheong Preferred devices. Preferred devices are recommended choices for future use and best overall value. December 2005 / B http://takcheong.com 1 1N5221B through 1N5281B Series (R) 1N5221B through 1N5281B Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted. Based on DC measurements at thermal equilibrium; lead length = 3/8"; thermal resistance of heat sink = 30C/W, VF = 1.1 V Max @ IF = 200mA for all types) Symbol Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Zener Current ZZT Maximum Zener Impedance @ IZT IZk Reverse Zener Current IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ Maximum Zener Voltage Temperature Coefficient ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.1 V Max @ IF = 200mA for all types) Zener Voltage (Note 3.) Device (Note 2.) Device Marking 1N5221B 1N5222B VZ (Volts) Max Zener Impedance (Note 4.) @ IZT ZZT @ IZT (mA) ) ( Leakage Current VZ IR @ VR (Note 5.) ZZK @ IZK ) ( (mA) A) ( Min Nom (Volts) (%/C) 1N5221B 2.28 2.4 2.52 20 30 1200 0.25 100 1 -0.085 1N5222B 2.375 2.5 2.625 20 30 1250 0.25 100 1 -0.085 1N5223B 1N5223B 2.565 2.7 2.835 20 30 1300 0.25 75 1 -0.08 1N5224B 1N5224B 2.66 2.8 2.94 20 30 1400 0.25 75 1 -0.08 1N5225B 1N5225B 2.85 3 3.15 20 29 1600 0.25 50 1 -0.075 1N5226B 1N5226B 3.135 3.3 3.465 20 28 1600 0.25 25 1 -0.07 1N5227B 1N5227B 3.42 3.6 3.78 20 24 1700 0.25 15 1 -0.065 1N5228B 1N5228B 3.705 3.9 4.095 20 23 1900 0.25 10 1 -0.06 1N5229B 1N5229B 4.085 4.3 4.515 20 22 2000 0.25 5 1 0.055 1N5230B 1N5230B 4.465 4.7 4.935 20 19 1900 0.25 5 2 0.03 1N5231B 1N5231B 4.845 5.1 5.355 20 17 1600 0.25 5 2 0.03 1N5232B 1N5232B 5.32 5.6 5.88 20 11 1600 0.25 5 3 +0.038 1N5233B 1N5233B 5.7 6 6.3 20 7 1600 0.25 5 3.5 +0.038 1N5234B 1N5234B 5.89 6.2 6.51 20 7 1000 0.25 5 4 +0.045 1N5235B 1N5235B 6.46 6.8 7.14 20 5 750 0.25 3 5 +0.05 2. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ) The type numbers listed have a standard tolerance on the nominal zener voltage of 5%. 3. ZENER VOLTAGE (VZ) MEASUREMENT Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30C 1C and 3/8" lead length. 4. ZENER IMPEDANCE (ZZ) DERIVATION ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC) with AC frequency = 60Hz. VZ) 5. TEMPERATURE COEFFICIENT ( Test conditions for temperature coefficient are as follows: A. IZT = 7.5mA, T1 = 25C, T2 = 125C (1N5221B through 1N5242B) B. IZT = Rated IZT, T1 = 25C, T2 = 125C (1N5243B through 1N5281B) Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature. http://www.takcheong.com 2 1N5221B through 1N5281B Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.1 V Max @ IF = 200mA for all types) Zener Impedance (Note 8.) Zener Voltage (Note 7.) VZ IR @ VR (Note 9.) @ IZT ZZT @ IZT Max (mA) ) ( ) ( (mA) A) ( (Volts) (%/C) 7.875 20 6 500 0.25 3 6 +0.058 8.2 8.61 20 8 500 0.25 3 6.5 +0.062 8.7 9.135 20 8 600 0.25 3 6.5 +0.065 8.645 9.1 9.555 20 10 600 0.25 3 7 +0.068 1N5240B 9.5 10 10.5 20 17 600 0.25 3 8 +0.075 1N5241B 1N5241B 10.45 11 11.55 20 22 600 0.25 2 8.4 +0.076 1N5242B 1N5242B 11.4 12 12.6 20 30 600 0.25 1 9.1 +0.077 1N5243B 1N5243B 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 +0.079 1N5244B 1N5244B 13.3 14 14.7 9 15 600 0.25 0.1 10 +0.082 1N5245B 1N5245B 14.25 15 15.75 8.5 16 600 0.25 0.1 11 +0.082 1N5246B 1N5246B 15.2 16 16.8 7.8 17 600 0.25 0.1 12 +0.083 1N5247B 1N5247B 16.15 17 17.85 7.4 19 600 0.25 0.1 13 +0.084 1N5248B 1N5248B 17.1 18 18.9 7 21 600 0.25 0.1 14 +0.085 Device VZ (Volts) Leakage Current (Note 6.) Device Marking Min Nom 1N5236B 1N5236B 7.125 7.5 1N5237B 1N5237B 7.79 1N5238B 1N5238B 8.265 1N5239B 1N5239B 1N5240B ZZK @ IZK 1N5249B 1N5249B 18.05 19 19.95 6.6 23 600 0.25 0.1 14 +0.086 1N5250B 1N5250B 19 20 21 6.2 25 600 0.25 0.1 15 +0.086 1N5251B 1N5251B 20.9 22 23.1 5.6 29 600 0.25 0.1 17 +0.087 1N5252B 1N5252B 22.8 24 25.2 5.2 33 600 0.25 0.1 18 +0.088 1N5253B 1N5253B 23.75 25 26.25 5 35 600 0.25 0.1 19 +0.089 1N5254B 1N5254B 25.65 27 28.35 4.6 41 600 0.25 0.1 21 +0.09 1N5255B 1N5255B 26.6 28 29.4 4.5 44 600 0.25 0.1 21 +0.091 1N5256B 1N5256B 28.5 30 31.5 4.2 49 600 0.25 0.1 23 +0.091 1N5257B 1N5257B 31.35 33 34.65 3.8 58 700 0.25 0.1 25 +0.092 1N5258B 1N5258B 34.2 36 37.8 3.4 70 700 0.25 0.1 27 +0.093 1N5259B 1N5259B 37.05 39 40.95 3.2 80 800 0.25 0.1 30 +0.094 1N5260B 1N5260B 40.85 43 45.15 3 93 900 0.25 0.1 33 +0.095 1N5261B 1N5261B 44.65 47 49.35 2.7 105 1000 0.25 0.1 36 +0.095 1N5262B 1N5262B 48.45 51 53.55 2.5 125 1100 0.25 0.1 39 +0.096 1N5263B 1N5263B 53.2 56 58.8 2.2 150 1300 0.25 0.1 43 +0.096 1N5264B 1N5264B 57 60 63 2.1 170 1400 0.25 0.1 46 +0.097 1N5265B 1N5265B 58.9 62 65.1 2 185 1400 0.25 0.1 47 +0.097 6. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ) The type numbers listed have a standard tolerance on the nominal zener voltage of 5%. 7. ZENER VOLTAGE (VZ) MEASUREMENT Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30C 1C and 3/8" lead length. 8. ZENER IMPEDANCE (ZZ) DERIVATION ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC) with AC frequency = 60Hz. VZ) 9. TEMPERATURE COEFFICIENT ( Test conditions for temperature coefficient are as follows: A. IZT = 7.5mA, T1 = 25C, T2 = 125C (1N5221B through 1N5242B) B. IZT = Rated IZT, T1 = 25C, T2 = 125C (1N5243B through 1N5281B) Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature. http://www.takcheong.com 3 1N5221B through 1N5281B Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.1 V Max @ IF = 200mA for all types) Zener Impedance (Note 12.) Zener Voltage (Note 11.) IR @ VR (Note 13.) ZZT @ IZT Max (mA) ) ( ) ( (mA) A) ( (Volts) (%/C) 68 71.4 1.8 230 1600 0.25 0.1 52 +0.097 71.25 75 78.75 1.7 270 1700 0.25 0.1 56 +0.098 77.9 82 86.1 1.5 330 2000 0.25 0.1 62 +0.098 1N5269B 82.65 87 91.35 1.4 370 2200 0.25 0.1 68 +0.099 1N5270B 1N5270B 86.45 91 95.55 1.4 400 2300 0.25 0.1 69 +0.099 1N5271B 1N5271B 95 100 105 1.3 500 2600 0.25 0.1 76 +0.11 1N5272B 1N5272B 104.5 110 115.5 1.1 750 3000 0.25 0.1 84 +0.11 1N5273B 1N5273B 114 120 126 1 900 4000 0.25 0.1 91 +0.11 1N5274B 1N5274B 123.5 130 136.5 0.95 1100 4500 0.25 0.1 99 +0.11 1N5275B 1N5275B 133 140 147 0.9 1300 4500 0.25 0.1 106 +0.11 1N5276B 1N5276B 142.5 150 157.5 0.85 1500 5000 0.25 0.1 114 +0.11 1N5277B 1N5277B 152 160 168 0.8 1700 5500 0.25 0.1 122 +0.11 1N5278B 1N5278B 161.5 170 178.5 0.74 1900 5500 0.25 0.1 129 +0.11 1N5279B 1N5279B 171 180 189 0.68 2200 6000 0.25 0.1 137 +0.11 1N5280B 1N5280B 180.5 190 199.5 0.66 2400 6500 0.25 0.1 144 +0.11 1N5281B 1N5281B 190 200 210 0.65 2500 7000 0.25 0.1 152 +0.11 (Note 10.) Device Marking Min Nom 1N5266B 1N5266B 64.6 1N5267B 1N5267B 1N5268B 1N5268B 1N5269B ZZK @ IZK VZ @ IZT Device VZ (Volts) Leakage Current 10. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ) The type numbers listed have a standard tolerance on the nominal zener voltage of 5%. 11. ZENER VOLTAGE (VZ) MEASUREMENT Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30C 1C and 3/8" lead length. 12. ZENER IMPEDANCE (ZZ) DERIVATION ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC) with AC frequency = 60Hz. VZ) 13. TEMPERATURE COEFFICIENT ( Test conditions for temperature coefficient are as follows: A. IZT = 7.5mA, T1 = 25C, T2 = 125C (1N5221B through 1N5242B) B. IZT = Rated IZT, T1 = 25C, T2 = 125C (1N5243B through 1N5281B) Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature. http://www.takcheong.com 4 1N5221B through 1N5281B Series 0.7 HEAT SINKS P D , MAXIMUM STEADY STATE POWER DISSIPATION (WATTS) 0.6 0.5 0.4 3/8" 3/8" 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 T L , LEAD TEMPERATURE (C) Figure 1. Steady State Power Derating http://www.takcheong.com 5 180 200 1N5221B through 1N5281B Series Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from: TL = LAPD + TA. LA is the lead-to-ambient thermal resistance (C/W) and PD is the power dissipation. The value for LA will vary and depends on the device mounting method. LA is generally 30 to 40C/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: JL, JUNCTION TO LEAD THERMAL RESISTANCE ( C/W) APPLICATION NOTE - ZENER VOLTAGE L 2.4-60 V 200 62-200 V 100 0 0 0.2 0.4 1000 7000 5000 0.6 0.8 1 TYPICAL LEAKAGE CURRENT AT 80% OF NOMINAL BREAKDOWN VOLTAGE 2000 1000 700 500 200 TJL = JLPD. 100 70 50 I R , LEAKAGE CURRENT ( A) VZ, the zener voltage temperature coefficient, is found from Figures 4 and 5. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Surge limitations are given in Figure 7. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of Figure 7 be exceeded. L 300 Figure 2. Typical Thermal Resistance TJL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for dc power: V = VZTJ. 400 L , LEAD LENGTH TO HEAT SINK (INCH) TJ = TL + TJL. For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ(TJ) may be estimated. Changes in voltage, VZ, can then be found from: 500 20 10 7 5 2 1 0.7 0.5 +125C 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 +25C 0.002 0.001 3 4 5 6 7 8 9 10 11 12 VZ , NOMINAL ZENER VOLTAGE (VOLTS) Figure 3. Typical Leakage Current http://www.takcheong.com 6 13 14 15 1N5221B through 1N5281B Series TEMPERATURE COEFFICIENTS TEMPERATURE COEFFICIENT (mV/ C) +12 +10 +8 +6 +4 +2 RANGE VZ @ IZT (NOTE 2) 0 -2 VZ , VZ , TEMPERA TURE COEFFICIENT (mV/ C) (-55 C to +150 C temperature range; 90% of the units are in the ranges indicated.) -4 2 4 3 5 6 7 8 10 9 11 100 70 50 30 20 5 3 2 1 10 12 20 TEMPERATURE COEFFICIENT (mV/C) 160 140 VZ @ IZT (NOTE 2) VZ , TEMPERA TURE COEFFICIENT (mV/C) VZ , 180 100 140 150 160 170 70 100 180 190 +6 VZ @ IZ TA= 25 C +4 +2 20mA 0 0.01mA 1mA -2 NOTE: BELOW 3 VOLTS AND ABOVE 8 VOL TS NOTE: CHANGES IN ZENER CURRENT DO NOT NOTE: AFFECT TEMPERATURE COEFFICIENTS -4 3 200 6 5 4 8 7 V Z , ZENER VOLTAGE (VOLTS) V Z , ZENER VOLTAGE (VOLTS) Figure 4c. Range for Units 120 to 200 Volts Figure 5. Effect of Zener Current 1000 100 TA = 25 C 70 500 T= 25 C 50 0V BIAS 0 BIAS C, CAP ACIT ANCE (pF) 200 C, CAP ACIT ANCE (pF) 50 Figure 4b. Range for Units 12 to 100 Volts 200 130 30 V Z , ZENER VOLTAGE (VOLTS) Figure 4a. Range for Units to 12 Volts 120 (NOTE 2) 7 V Z , ZENER VOLTAGE (VOLTS) 120 VZ @ IZ RANGE 10 100 1V BIAS 50 20 10 50% OF V Z BIAS 5 30 20 1 VOLT BIAS 10 7 50% OF V BIAS 5 3 2 2 1 1 1 2 5 10 20 50 100 120 140 Figure 6a. Typical Capacitance 2.4-100 Volts 160 180 190 200 V Z, ZENER VOLTAGE (VOLTS) V Z, ZENER VOLTAGE (VOLTS) Figure 6b. Typical Capacitance 120-200 Volts http://www.takcheong.com 7 220 1N5221B through 1N5281B Series Ppk , PEAK SURGE POWER (WATTS) 100 70 50 RECT ANGULAR WAVEFORM T J = 25C PRIOR TO INITIAL PULSE 11V-91V NONREPETITIVE 30 5% DUTY CYCLE 1.8V-10V NONREPETITIVE 20 10 10% DUTY CYCLE 7 5 20% DUTY CYCLE 3 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 PW, PULSE WIDTH (ms) Figure 7a. Maximum Surge Power 1.8-91 Volts 1000 RECT ANGULAR WAVEFORM, TJ = 25 C 300 200 100 70 50 100-200 VOLTS NONREPETITIVE 30 20 10 7 5 3 2 1 0.01 T J = 25C iZ (rms) = 0.1 Iz(dc) VZ = 2.7V f = 60 Hz 200 47V 100 27V 50 20 6.2V 10 5 2 1 0.1 1 10 100 0.1 1000 0.2 0.5 1 2 5 10 20 PW, PULSE WIDTH (ms) IZ , ZENER CURRENT (mA) Figure 7b. Maximum Surge Power DO-35 100-200Volts Figure 8. Effect of Zener Current on Zener Impedance 1000 700 500 Z Z , DYNAMIC IMPEDANCE (OHMS) Z Z , DYNAMIC IMPEDANCE (OHMS) 500 TJ = 25C 200 100 70 50 5mA 20 20mA 100 MAXIMUM 500 f = 60Hz IZ = 1mA 50 1000 iZ (rms) = 0.1 IZ (dc) I F , FOR WARD CURRENT (mA) Ppk , PEAK SURGE POWER (WATTS) 1000 700 500 10 7 5 2 MINIMUM 200 100 50 75 C 20 10 25 C 5 150 C 0 C 2 1 1 1 2 3 5 7 10 20 30 50 70 100 0.4 0.5 V Z , ZENER VOLTAGE (VOLTS) 0.6 0.7 0.8 0.9 1 V F , FORWARD VOLTAGE (VOLTS) Figure 9. Effect of Zener Voltage on Zener Impedance Figure 10. Typical Forward Characteristics http://www.takcheong.com 8 1.1 1N5221B through 1N5281B Series 20 10 I Z , ZENER CURRENT (mA) TA = 25C 1 0.1 0.01 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 29 30 V Z , ZENER VOLTAGE (VOLTS) Figure 1 1. Zener Voltage versus Zener Current - VZ = 1 thru 16 Volts 10 I Z , ZENER CURRENT (mA) TA = 25C 1 0.1 0.01 15 16 17 18 19 20 21 22 23 24 25 26 27 V Z , ZENER VOLTAGE (VOLTS) Figure 12. Zener Voltage versus Zener Current - VZ = 15 thru 30 Volts http://www.takcheong.com 9 28 1N5221B through 1N5281B Series I Z , ZENER CURRENT (mA) 10 TA = 25 1 0.1 0.01 30 35 40 45 50 55 65 60 70 75 80 85 95 100 105 240 250 260 90 V Z , ZENER VOLTAGE (VOLTS) Figure 13. Zener Voltage versus Zener Current - VZ = 30 thru 105 Volts I Z , ZENER CURRENT (mA) 10 1 0.1 0.01 110 120 130 140 150 160 170 180 190 200 210 220 230 V Z , ZENER VOLTAGE (VOLTS) Figure 14. Zener Voltage versus Zener Current - VZ = 110 thru 220 Volts http://www.takcheong.com 10