A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 200 mA 40 V
BVCEX VBE = -1.5 V IC = 100 mA 65 V
BVCBO IC = 500 µA65
V
ICEO VCE = 30 V 100 µ
µµ
µA
IEBO VEB = 4.0 V 100 µ
µµ
µA
hFE VCE = 5.0 V IC = 250 mA 10 ---
VCE(SAT) IC = 500 mA IB = 100 mA 1.0 V
Cob VCB = 30 V f = 1.0 MHz 10 pF
ftVCE = 28 V IC = 150 mA f = 100 MHz 500 MHz
Pout
GP
η
ηη
ηVCE = 28 V Pin = 1.0 W f = 400 MHz 3.0
4.8
40
W
dB
%
NPN SILICON RF POWER TRANSISTOR
2N3375
DESCRIPTION:
The ASI 2N3375 is Designed f or
Class A,B,C Am plifier,Oscillator and
Driver Applications Covering the
VHF-UHF Region.
FEATURES INCLUDE:
• Isolated Pack age
MAXIMUM RATINGS
IC1.5 A
VCE 40 V
PDISS 11.6 W @ T C = 25 OC
TJ-65OC to +200 OC
TSTG -65OC to +200 OC
θ
θθ
θJC 15 OC/W
PACKAGE STYLE TO- 60(ISOLATED)
1 = EMITTER 2 = BASE
3 = COLLECTOR
