LTO-DMS
MBR10100CT thru MBR10200CT
10 Amp HT Power Schottky Barrier Rectifier
100 Volts to 200Volts
Features
* High Junction Temperature Capability
* Low Leakage Current and Low Forward Voltage Drop
* Low Power Loss and High Efficiency
Maximum Ratings
* Operating Junction Temperature: 150°C
* Storage Temperature: - 55 °C to +175°C
* Per diode Thermal Resistance 2.2°C/W Junction to Case
Mechanical Data
* Case: Molded Plastic
* Terminals: Plated Lead Solderable per
MIL-STD-202, Method 208
* Marking:Type Number
* Weight: 2.24 grams (approx)
LTO-DMS Semiconductor Corporatin
1468, 86th Street, Brooklyn
New York, 11228, USA
Tel: (718) 234 6010 / (707) 3223 4679
Fax:(718) 234 6013 / (707) 3223 6696
DIMENSIONS
INCHES
MM
DIM
MIN MAX MIN MAX
NOTE
A 0.570 0.620.
14.4 15.75
B 0.380 0.405 9.66 10.28
C 0.100 0.120 2.54 3.04
D 0.235 0.255 5.97 6.48
E 0.335 0.365 8.51 9.27
F 0.110 0.155 2.80 3.93
G 0.500 0.562
12.7 14.27
H 0.095 0.105 2.42 2.66
I 0.025 0.035 0.64 0.89
J 0.016 0.025 0.41 0.64
K 0.142 0.147 3.61 3.37
L 0.160 0.190 4.06 4.82
M 0.045 0.055 1.14 1.39
N 0.102 typ 2.6 typ
Symbol Characteristics MBR10100CT MBR10150CT MBR10200CT Unit
VRRM Maximum Recurrent Peak Reverse Voltage 100 150 200 V
VRM Maximum DC Blocking Voltage 100 150 200 V
VR(RMS) Maximum RMS Voltage 70 105 140 V
VF Maximum Forward Voltage (Note 1)
IF=10A @TJ=25°C 0.85 0.95 V
IF(AV) Average Forward Current 10 A
IFSM 8.3ms Single Half-Sine-Wave
Peak Forward Surge Current 150 A
dv/dt Voltage Rate Of Change (Rated VR) 10000 V/us
IR
Maximum DC Reverse
Current at Rated DC
Blocking Voltage
TJ=25°C
TJ=125°C
0.2
40 mA
RthJC Typical Thermal Resistance (Note 2) 2.0 °C/ W
CJ Typical Junction Capacitance (Note 3) 170 pF
TJ Operating Temperature Range -55to+150 °C
TSTG Storage Temperature Range -55to+175 °C
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
TO-220AB
Revision: 1 2002/06/17
