-G E SOLID STATE OLE gy 3475081 0017355 4 I 3875081 G E SOLID STATE D1E 17355 D 37 3R+O7 General-Purpose Power Transistors File Number 529 Medium-Power Silicon N-P-N Transistors Rugged Devices for Intermediate, Power Applications in Industrial and Commercial Equipment Features: 2N6264; premium type trom 2N3441 family Maximum safe-area-ol operation curves for de and pulse operation @ High voltage ratings Low saturation voltages Applications; @ Series and shunt regulators High-tidelity ampliliers @ Power switching circuits Solenoid drivers RCA 2N3441, 2N6263, and 2N6264 are silicon n-p-n transis- tors intended for a wide variety of medium-to-high power, high-voltage applications. These devices employ the JEDEC TO-213AA package; they differ in maximum ratings for voltage, current, and power. 2N3441, 2N6263, 2N6264 Y TERMINAL DESIGNATIONS c EN {FLANGE} i 2CS-27516 JEDEC TO-213AA MAXIMUM RATINGS, Absolute-Maximum Values: 2N6263 2N3441 2N6264 *COLLECTOR-TO-BASE VOLTAGE ......... cece cee eeveeeas teeneae ss Vogo 140 160 170 Vv COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: * With base open ......e.ceeee ee freer er eeeveniertsetensescssssviaee Vogglsus) 120 140 150 v With external base-to-emitter resistance (Rye) = 1002 cece eee eee eee ees Voertsus) 130 150 160 v With base reverse-blased (Vege TTB V) cicec cee e ee terterecrencserees Vapylsus) 140 160 170 v *EMITTER-TO-BASE VOLTAGE... ....cccessceees Cee e eaten rent ee anes . Vespo 7 7 7 Vv *CONTINUOUS COLLECTOR CURRENT .............. bes teas ee lc 3 3 3 A PEAK COLLECTOR CURRENT.......... Deedee teeter tne sane ens sees 4 4 4 A *CONTINUOUS BASE CURRENT ......... cc cscs ecccccceccccececuveneees lg 2 2 2 A TRANSISTOR DISSIPATION: Py * Atcase temperature up to 25C oo. c ace e cece eee cecesteccceeesncuve 20 25 50 w * At temperatures above 26C oo... eee eee bbe e een ee eee an ee *TEMPERATURE RANGE: See Figs. 284 Storage & Opersting (Junction) ... cc. cece eee eee nsec eens enna 5 to 200 % *PIN TEMPERATURE (During Soldering): At distances > 1/32 in, (0.8 mm} from seating plane for 10 s max. ..,..., 235 % 4 *In accordance with JEDEC registration data formset JS-6 ROF-2 359nena GE SOLID STATE ole D yj 3875081 O01735b o i 3875081 GE SOLID_STATE Q1E 17356 D 1-33-09 General-Purpose Power Transistors 2N3441, 2N6263, 2N6264 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25C, Unless Otherwise Specified TEST CONDITIONS LIMITS 2N6263 2N3441 2N6264 CHARACTERISTIC SYMBOL VOLTAGE CURRENT UNITS * Vi de A de Vor Ves | Voe le |] tg | Min. | Max.] Min. | Max.) Min. | Max. Collector-Cutoff Current: 100 ol - SE - - - - | With base open leeo 130 1 - - - - 1 ]mA 140 oj - = - 100 - _ Collector-Cutoff Current: 120 15 - 24 - - ~- ~ leex 140 ~1.6 _ - - Bt] - - 140 1.5 - - - 1 - - ; With base-emittar 160 -15 -~ j-]|-} - | - foosy junction reversed mA | biased 120 -1.5 - worp - - - ft loex 140 -15 -|-|[-] el-]- [ai (Te 150C) 140 1.5 - - - 5] - - j 150 -15 - - - - _ ttt *Emitter-Cutoff Currant leBo 5 _ o| _ _ _ ma 7 - - = 1 = 0.2 Collector-to-Emitter Sustaining Voltage: Voeolsus) : With base open 0.1 Qj} 120 | 140 |160 - i? With external base-to- } emitter resistance VoeR(sus Q1 130 |] 7150 |] - |160]} - J (Rgel = 100.2 With base-emitter Junction reversed Veey (sus ~15 | 04 140 | | 160} - J170}] - |- biased ' 2 1 - - - - 20 60 ]- *{0C Forward-Current hee 2 3 3/-]-f- s|- |* Transfer Ratio 4 05 20 4100 25 | 100 - - 4 27 - = 6 | - - ~ 06 7005] {12} i - - Coltector-to-Emitter Veg (sat) 1 0.1 - - - ~ _ 0.5" |V Saturating Voltage . 27 os| - - - 6 | - 2 1 - - - - - 1.5 Base-to-Emitter Voltage Vee 4 05 - 2*| 17 - - jv 4 27 -j|-|- 6} - | - *IMagnitude of Common- Emitter, Small-Signal, Short-Circuit Forward Ihgal 4 0.5 5 -~ 5 | - 5] - Current Transfer Ratio (f = 40 kHz) Gain-Bandwidth Product fr 4 0.2 200 | $200} |200 | - |kHz *Common-Emitter, Small- Signal, Short-Circuit ht, 4 0.1 25 - - - 256 - Forward Current Transfer 4 0.6 - ~- 15 | 75 - - Ratlo {f= 1 kHz} Forward-Blas Second . Breakdown Collector 120 0.167) - - - - Current, Pulse Duration Is 120 - - ~ |0.417; = |A (non-repatitive) = 15 120 - - 0.21 = - = Thermal Resistance: Junction-to-Case Rae ~ 1875] 7 {| 3.5 | cw *In accordance with JEDEC registration data format (JS-6 ROF-2}. ACAUTION: The sustaining voltage Voeglsus), Veert(susl, and Vogy tes) MUST NOT be measured on a curve tracer, axG E SOLID STATE OLE D I 387508) OO17357 1 ar 3875081 GE SOLID STATE 016 17357. Db T*BR8-O9 General-rurpose rower Transistors - 2N3441, 2N6263, 2N6264 c (CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE) yo - SINGLE He 2 int ~ = - a NONREPETITIVE 31-1143 na COLLECTOR CURRENT (I)A io too 4 & 4099 COLLECTOR-TO-EMITTER VOLTAGE (Vog)-V 92CS -19471 Fig. 1 ~- Maximum operating areas for type 2N6264, ciresec (CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE) TIPLIER c MAX.{PULSED) Ic NONREPETITIVE . . . Voeg MAX 120 : : MAX.2140V --- to 100 COLLECTOR-TO-EMITTER VOLTAGE (Vcg]V 92CS-19472 Fig. 2 Maximum operating areas for types 2N6263 and 2N3441, 361 0900 A~133875081 G General-Purpose Power Transistors 2N3441, 2N6263, 2N6264 GE SOLID STATE E SOLID STATE CASE TEMPERATURE [Tc) *C on S-146em Fig. 3 Current derating curve for all typas. COLLECTOR -TO-EMITTER VOLTAGE (ce)* 4 BASE CURRENT (Ig)ma BASE CURRENT (Ig) mA Os ' . 2 25 BASE-TO- EMITTER VOLTAOE (VggiV 52C5-19508 Fig Typical input characteristics for type 2N6264. COLLECTOR-TO~EMITTER VOLTAGE 8 a 8 a I 2 g bE = Pi < 5 3 3 COLLECTOR CURRENT (Ig )A TEMPERATURE (T,) 128C Os ' Ls 2 2.8 BASE -TO - EMITTER VOLTAGE [ Vag) V sics-191 Fig. 7 Typical input characteristics for typa 2N6263, OLE D pj 267soa2 00173Sa 3 | dD 1338O9 BIE 17358 ast CASE TEMPERATURE (Tc)*C a2ce-marsaz Fig. 4 Dissipation derating curves for all types. BASE-T0-EMITTER VOLTAGE (Vap)V S205 ~ 1245 Fig. 6 Typical input characteristics for type 2N3441. TO-EMITTER VOLTAGE (Vee}#4 BASE-TO-EMITTER VOLTAGE (Vag I-V 9205-19510 Fig. 8 Typical transfer characteristics for type 2N6264.ett G E SOLID STATE OLE D Bj 3675081 0017359 Ss i 3875081 GE SOLID STATE O1E 17359 BD JrBR-09 SCOLLECTOR~TO-EMITTER VOLTAGE (Vogl: 4 COLLECTOR CURRENT (Ip)-A BASE~TO-EMITTER VOLTAGE (VpelV FICS ~ 1284S Fig. 9 Typical transfer characteristics for type 2N3441. GASE TEMPERATURE (To) 28C 100 180 COLLECTOR ~ TO - EMITTER VOLTAGE (Vog) S2CS- 19513 Fig. 11 Typical output characteristics for type 2N6264, CASE TEMPERATURE (Te )+ 25C 4 9 4 = & z z 5 3 g S 3 a 3 S COLLECTOR-TO-EMITTER VOLTAGE (Voge }V 92C$ ~1055s Fig. 13 Typical output characteristics for type 2N6263. 4 I o a & z & 3 z S e 4 a 8 COLLECTOR CURRENT (I]a 2 % Z & 5 z g Z i st ge ge 2 z < & General-Purpose Power Transistors ae 2N3441, 2N6263, 2N6264 VOLTAGE 4 LS z BASE -TO- EMITTER VOLTAGE (Vgc IV 82cs-194i2 Fig. 10 ~ Typical transfer characteristics for type 2N6263. TEMPERATURE (Tc}s25C COLLECTOR=TO-EMITTER VOLTAGE WepIV 925~12642 Fig. 12 Typical output characteristics for type 2N3441. COLLECTOR-TO-EMITTER VOLTAGE TEMPERATURE este 2 ton! l 10 COLLECTOR CURRENT (I} 4 a2cs-r95i Fig. 14 -- Typical de beta characteristics for type 2N6264. 363 0902 B-Ol~G E SOLID STATE OLE D 3475041 OOL?3b0 1 i 3875081 G E SOLII ME 43 +33-0% b General-Purpose Powe Traraleteeg O1E 17360 DB 133 OF 2N3441, 2N6263, 2N6264 COLLECTOR -TFO-EMITTER VOLTAGE say VOLTAGE ? Q 5 S . . [8 j 5 f : 5 125 wt ws for2 orl 10 COLLECTOR CURRENT (te)}a COLLECTOR CURAENT (Ig a 2eCS-128 46 9205-19516 Fig. 1 Typical de beta characteristics for Fig. 16 Typical dc beta characteristics for type 2N3441, type 2N6263. 364