1N5711W SURFACE MOUNT SCHOTTKY BARRIER DIODE POWER SEMICONDUCTOR Features * * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion SOD-123 A B G Mechanical Data * * * * * E D Dim Min Max A 3.55 3.85 B 2.55 2.85 C 1.40 1.70 D 1.35 E Case: SOD-123, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Marking: Date Code and Type Code Type Code: SA Weight: 0.01 grams (approx.) Maximum Ratings G C H J 0.55 Typical 0.25 H 0.15 Typical J 0.10 All Dimensions in mm @ TA = 25C unless otherwise specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Symbol 1N5711W Unit VRRM VRWM VR 70 V VR(RMS) 49 V Maximum Forward Current IFM 15 mA Power Dissipation (Note 1) Pd 250 mW RJA 600 K/W Tj, TSTG -65 to +175 C Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Electrical Characteristics @ TA = 25C unless otherwise specified Symbol Min Typ Max Unit V(BR)R 70 V IR = 10A IR 200 nA VR = 50V Forward Voltage Drop VFM 0.41 1.00 V IF = 1.0mA IF = 15mA Junction Capacitance Cj 2.0 pF VR = 0V, f = 1.0MHz Reverse Recovery Time trr 1.0 ns IF = IR= 5.0mA Irr = 0.1 x IR, RL = 100 Characteristic Reverse Breakdown Voltage Reverse Leakage Current Note: Test Condition 1. Valid provided that terminals from the case are maintained at ambient temperature. DS11015 Rev. B-2 1 of 1 1N5711W