Field Effect Transistor N-Channel, Enhancement Mode 2N7002DW Features * * * * * * * * www.onsemi.com Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 SC-88/SC70-6/SOT-363 CASE 419B-02 MARKING DIAGRAM 2NM ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS 1.0 MW) 60 V VGSS Gate-Source Voltage Continuous 20 V Pulsed 40 Continuous 115 Continuous at 100C 73 Pulsed 800 ID TJ, TSTG Drain Current Junction and Storage Temperature Range 2N M PIN CONNECTIONS mA -55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. = Specific Device Code = Assembly Operation Month D2 G1 S1 1 S2 G2 D1 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. THERMAL CHARACTERISTICS (TA = 25C unless otherwise noted) Parameter Ratings Unit Total Device Dissipation 200 mW Derate Above TA = 25C 1.6 mW/C Thermal Resistance, Junction-to-Ambient (Note 1) 415 _C/W Symbol PD RqJA 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size. (c) Semiconductor Components Industries, LLC, 2007 June, 2020 - Rev. 3 1 Publication Order Number: 2N7002DW/D 2N7002DW ORDERING INFORMATION Part Number Top Mark Package Shipping 2N7002DW 2N SC70-6 (Pb-Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS (Note 2) BVDSS IDSS IGSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 mA 60 78 - V Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V - 0.001 1.0 mA VDS = 60 V, VGS = 0 V, TJ = 125_C - 7 500 VGS = 20 V, VDS = 0 V - 0.2 10 nA 1.00 1.76 2.0 V W Gate-Body Leakage ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA RDS(on) Static Drain-Source On-Resistance VGS = 5 V, ID = 0.05 A - 1.6 7.5 VGS = 10 V, ID = 0.5 A - - 2.0 VGS = 10 V, ID = 0.5 A, TJ = 125_C - 2.53 13.5 ID(on) gFS On-State Drain Current VGS = 10 V, VDS = 7.5 V 0.50 1.43 - A Forward Transconductance VDS = 10 V, ID = 0.2 A 80.0 356.5 - mS - 37.8 50 pF DYNAMIC CHARACTERISTICS VDS = 25 V, VGS = 0 V, f = 1.0 MHz Ciss Input Capacitance Coss Output Capacitance - 12.4 25 pF Crss Reverse Transfer Capacitance - 6.5 7 pF - 5.85 20 ns - 12.5 20 ns SWITCHING CHARACTERISTICS (Note 2) tD(ON) Turn-On Delay Time tD(OFF) Turn-Off Delay Time VDD = 30 V, ID = 0.2 A, VGEN = 10 V, RL = 150 W, RGEN = 25 W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Short duration test pulse used to minimize self-heating effect. 1.6 3.0 1.2 5V 1.0 4V 0.8 0.6 0.4 3V 0.2 ON-RESISTANCE (W) VGS = 3 V VGS = 10 V 1.4 R DS (on), DRAIN-SOURCE ID , DRAIN-SOURCE CURRENT (A) TYPICAL PERFORMANCE CHARACTERISTICS 4V 4.5 V 5V 6V 2.5 2.0 10 V 1.5 8V 9V 7V 2V 0.0 0 1 2 3 4 5 6 7 8 9 1.0 0.0 10 VDS ,DRAIN-SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 I D , DRAIN-SOURCE CURRENT (A) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current www.onsemi.com 2 1.0 2N7002DW TYPICAL PERFORMANCE CHARACTERISTICS (continued) 3.0 2.0 1.5 1.0 -50 0 50 100 ON-RESISTANCE (W) R DS (on), DRAIN-SOURCE ON-RESISTANCE (W) VGS = 10 V ID = 500 mA 2.5 0.5 2.5 ID = 500 mA 2.0 ID = 50 mA 1.5 1.0 150 2 TJ = -25C I D, DRAIN CURRENT (A) 150 C 25 C 125 C 0.6 75 C 0.4 0.2 0.0 2 3 4 5 6 2.0 ID = 1 mA ID = 0.25 mA 1.5 1.0 -50 PC , POWER DISSIPATION (mW) 150 C 100 25 C 10 -55 C 0.6 0.8 50 100 150 Figure 6. Gate Threshold Variation with Temperature VGS = 0 V 0.4 0 TJ , JUNCTION TEMPERATURE (C) Figure 5. Transfer Characteristics 0.2 10 VGS = VDS VGS, GATE TO SOURCE VOLTAGE (V) 1 0.0 8 2.5 VOLTAGE (V) 1.0 0.8 6 Figure 4. On-Resistance Variation with Gate-Source Voltage Vth , GATE-SOURCE THRESHOLD Figure 3. On-Resistance Variation with Temperature V DS = 10 V 4 VGS, GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (C) IS , REVERSE DRAIN CURRENT (mA) R DS (on), DRAIN-SOURCE 3.0 280 240 200 160 120 80 40 0 1.0 V SD , BODY DIODE FORWARD VOLTAGE (V) 0 25 50 75 100 125 150 Ta , AMBIENT TEMPERATURE ( C) Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature Figure 8. Power Derating www.onsemi.com 3 175 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE Y 1 SCALE 2:1 DATE 11 DEC 2012 2X aaa H D D H A D 6 5 GAGE PLANE 4 1 2 L L2 E1 E DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X b ddd TOP VIEW C A-B D M A2 DETAIL A A 6X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. ccc C A1 SIDE VIEW C SEATING PLANE END VIEW c RECOMMENDED SOLDERING FOOTPRINT* 6X DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd MILLIMETERS MIN NOM MAX --- --- 1.10 0.00 --- 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 GENERIC MARKING DIAGRAM* 6 XXXMG G 6X 0.30 INCHES NOM MAX --- 0.043 --- 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN --- 0.000 0.027 0.006 0.003 0.070 0.078 0.045 0.66 1 2.50 0.65 PITCH XXX = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *Date Code orientation and/or position may vary depending upon manufacturing location. *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC-88/SC70-6/SOT-363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE Y DATE 11 DEC 2012 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 2: CANCELLED STYLE 3: CANCELLED STYLE 4: PIN 1. CATHODE 2. CATHODE 3. COLLECTOR 4. EMITTER 5. BASE 6. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 6: PIN 1. ANODE 2 2. N/C 3. CATHODE 1 4. ANODE 1 5. N/C 6. CATHODE 2 STYLE 7: PIN 1. SOURCE 2 2. DRAIN 2 3. GATE 1 4. SOURCE 1 5. DRAIN 1 6. GATE 2 STYLE 8: CANCELLED STYLE 9: PIN 1. EMITTER 2 2. EMITTER 1 3. COLLECTOR 1 4. BASE 1 5. BASE 2 6. COLLECTOR 2 STYLE 10: PIN 1. SOURCE 2 2. SOURCE 1 3. GATE 1 4. DRAIN 1 5. DRAIN 2 6. GATE 2 STYLE 11: PIN 1. CATHODE 2 2. CATHODE 2 3. ANODE 1 4. CATHODE 1 5. CATHODE 1 6. ANODE 2 STYLE 12: PIN 1. ANODE 2 2. ANODE 2 3. CATHODE 1 4. ANODE 1 5. ANODE 1 6. CATHODE 2 STYLE 13: PIN 1. ANODE 2. N/C 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 14: PIN 1. VREF 2. GND 3. GND 4. IOUT 5. VEN 6. VCC STYLE 15: PIN 1. ANODE 1 2. ANODE 2 3. ANODE 3 4. CATHODE 3 5. CATHODE 2 6. CATHODE 1 STYLE 16: PIN 1. BASE 1 2. EMITTER 2 3. COLLECTOR 2 4. BASE 2 5. EMITTER 1 6. COLLECTOR 1 STYLE 17: PIN 1. BASE 1 2. EMITTER 1 3. COLLECTOR 2 4. BASE 2 5. EMITTER 2 6. COLLECTOR 1 STYLE 18: PIN 1. VIN1 2. VCC 3. VOUT2 4. VIN2 5. GND 6. VOUT1 STYLE 19: PIN 1. I OUT 2. GND 3. GND 4. V CC 5. V EN 6. V REF STYLE 20: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR STYLE 21: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. N/C 6. CATHODE 1 STYLE 22: PIN 1. D1 (i) 2. GND 3. D2 (i) 4. D2 (c) 5. VBUS 6. D1 (c) STYLE 23: PIN 1. Vn 2. CH1 3. Vp 4. N/C 5. CH2 6. N/C STYLE 24: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE STYLE 25: PIN 1. BASE 1 2. CATHODE 3. COLLECTOR 2 4. BASE 2 5. EMITTER 6. COLLECTOR 1 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 27: PIN 1. BASE 2 2. BASE 1 3. COLLECTOR 1 4. EMITTER 1 5. EMITTER 2 6. COLLECTOR 2 STYLE 28: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN STYLE 29: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE/ANODE 6. CATHODE STYLE 30: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC-88/SC70-6/SOT-363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 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