BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SD596
Document number: BL/SSSTC024 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 30 V
Collector-emitter breakdown
voltage V(BR)CEO IC=1mA,IB=0 B25 V
Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V
Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA
DC current gain hFE
VCE=1V,IC=100mA
VCE=1V,IC=700mA
110
50
200
400
Collector-emitter saturation voltage VCE(sat) IC=700mA, IB=70mA B 0.22 0.6 V
Base to Emitter voltage VBE VCE=6V,IC=10mA 600 640 700 V
Transition frequency fTVCE=6V, IE= -10mA 170 MHz
Output capacitance Cob VCB=6V, IE=0,f=10kHz 12 pF
CLASSIFICATION OF hFE(1)
Range 110-180 135-220 170-270 200-320 250-400
Marking DV1 DV2 DV3 DV4 DV5
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified