LTO-DMS
MBR20100 thru MBR20200
20 Amp HT Power Schottky Barrier Rectifier
100 Volts to 200 Volts
Features
* High Junction Temperature Capability
* Low Leakage Current and Low Forward Voltage Drop
* Low Power Loss and High Efficiency
Maximum Ratings
* Operating Junction Temperature: 150°C
* Storage Temperature: - 55 °C to +175°C
* Per diode Thermal Resistance 2.2°C/W Junction to Case
Mechanical Data
* Case: Molded Plastic
* Terminals: Plated Lead Sol derable per
MIL-STD-202, Method 208
* Marking:Type Number
* Weight: 2.24 grams (approx)
LTO-DMS Semiconductor Corporation
1468, 86th Street, Brooklyn
New York, 11228, USA
Tel: (718) 234 6010 / (707) 3223 4679
Fax:(718) 234 6013 / (707) 3223 6696
DIMENSIONS
INCHES
MM
DIM
MIN MAX MIN MAX
NOTE
A 0.560 0.625 14.22 15.88
B 0.380 0.420 9.65 10.67
C 0.100 0.135 2.54 3.43
D 0.230 0.270 5.84 6.86
E 0.380 0.420 9.65 10.67
F ------ 0.250 ----- 6.35
G 0.500 0.580 12.70 14.73
H 0.190 0.210 4.83 5.33
I 0.020 0.045 0.51 1.14
J 0.012 0.025 0.30 0.64
K 0.139 0.161 3.53 4.09
L 0.140 0.190 3.56 4.83
M 0.045 0.055 1.14 1.40
N 0.080 0.115 2.03 2.92
Symbol Characteristics MBR20100 MBR20150 MBR20200 Unit
VRRM Maximum Recur e Voltage rent Peak Revers 100 150 200 V
VRM Maximum DC Blocking Voltage 100 150 200 V
R(RMS Maximum RMS Voltage 70 105 140 V
Maximum Forward Volt
IF=20A @TJ=25°C
Average Forward Cu
8.3ms Single Half-Sine-Wa
Superimposed On Rated Load
Voltage Rate Of Change (Rated
Maximum DC Reverse Current TJ=
At Rated DC Blocking Voltage TJ=125°C
0.2
40
Typical Thermal Resistance (No 2) 2.0
CJ Typical Junction Capacitance (Note 3) 400 pF
TJ Operating Temperature Range -55to+150 °C
STG Storage Temperature Range -55to+175 °C
NOTES: ycle 2%. . rse Voltage Of 4.0V DC.
1. 300us Pulse Width, Duty C
V)
VF age Drop Per Element 0.90 0.95 V
IF(AV) rrent 20 A
IFSM ve 150 A
dv/dt VR) 10000 V/us
IR 25°C mA
RthJC te °C/ W
T
2. Thermal Resistance Junction To Case
3. Measured At 1.0MHz And Applied Reve
TO-220AC
Revision: 1 2002/06/17
