BSL314PE OptiMOSTM-P 3 Small-Signal-Transistor Features Product Summary VDS * Dual P-channel RDS(on),max * Enhancement mode * Logic level (4.5V rated) 30 V VGS=-10 V 140 mW VGS=-4.5 V 230 ID -1.5 * ESD protected A PG-TSOP-6 * Qualified according AEC Q101 6 5 * 100% Lead-free; RoHS compliant 4 * Halogen free according to IEC61249-2-21 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSL314PE PG-TSOP-6 H6327: 3000 pcs/ reel sPT Yes Non dry Maximum ratings, at T j=25 C, unless otherwise specified Parameter 1) Symbol Conditions Continuous drain current ID Value T A=25 C -1.5 T A=70 C -1.2 -6.1 Unit A Pulsed drain current I D,pulse T A=25 C Avalanche energy, single pulse E AS I D=-1.5 A, R GS=25 W 6 mJ Reverse diode dv /dt dv /dt I D=-1.5 A, V DS=-16 V, di /dt =-200A/s, T j,max=150 C 6 kV/s Gate source voltage V GS Power dissipation2) P tot Operating and storage temperature T j, T stg ESD Class T A=25 C JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 1) 20 V 0.5 W -55 ... 150 C 1000V to 2000V 260 C C 55/150/56 C Remark: one of both trainsistors in operation. Rev 2.3 page 1 2013-11-07 BSL314PE Parameter Values Symbol Conditions Unit min. typ. max. - - 250 Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint 2) K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0V, I D=-250A -30 - - Gate threshold voltage V GS(th) V DS=VGS, I D=-6.3A -1 -1.5 -2 Drain-source leakage current I DSS V DS=-30V, V GS=0 V, T j=25 C - - -1 V DS=-30V, V GS=0V, T j=150 C - - -100 V mA Gate-source leakage current I GSS V GS=-20V, V DS=0V - - -5 A Drain-source on-state resistance R DS(on) V GS=-4.5V, I D=-1.2A - 153 230 mW V GS=-10V, I D=-1.5A - 107 140 3 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-1.2 A S 2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long; they are present on both sides of the PCB. Rev 2.3 page 2 2013-11-07 BSL314PE Parameter Values Symbol Conditions Unit min. typ. max. - 221 294 - 126 168 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 7 11 Turn-on delay time t d(on) - 5.1 - Rise time tr - 3.9 - Turn-off delay time t d(off) - 12.4 - Fall time tf - 2.8 - Gate to source charge Q gs - -0.7 - Gate to drain charge Q gd - -0.3 - Gate charge total Qg - -2.9 - Gate plateau voltage V plateau - -3.2 - V - - -0.5 A - - -6.1 - 0.8 1.1 V - 12.5 - ns - 4.3 - nC V GS=0 V, V DS=-15 V, f =1 MHz V DD=-15V, V GS=-10 V, I D=-1.5 A, R G,ext=6 W pF ns Gate Charge Characteristics V DD=-15 V, I D=-1.5 A, V GS=0 to -10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.3 T A=25 C V GS=0 V, I F=-1.5A, T j=25 C V R=-15 V, I F=-1.5A, di F/dt =100 A/s page 3 2013-11-07 BSL314PE 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS-10 V 1.6 0.5 1.2 ID [A] Ptot [W] 0.375 0.25 0.8 0.4 0.125 0 0 0 40 80 120 160 0 20 40 TA [C] 60 80 100 120 140 160 TA [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 1 s 10 s 100 s 100 0.5 102 0.2 1 ms 0.1 ZthJA [K/W] 10-1 ID [A] 10 ms DC 10-2 0.05 101 0.02 0.01 single pulse 100 10-3 10-4 10-1 10-2 10-1 100 101 102 VDS [V] Rev 2.3 10-5 10-4 10-3 10-2 10-1 100 101 tp [s] page 4 2013-11-07 BSL314PE 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 8 400 3V 4.5 V 7 350 5V 3.3 V 3.5 V 6 4V 300 10 V 4V 250 RDS(on) [mW] ID [A] 5 4 3 3.5 V 200 4.5 V 150 5V 10 V 2 3.3 V 100 1 3V 50 2.8 V 0 0 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 6 7 8 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C 6 8 7 5 6 4 gfs [S] ID [A] 5 3 25 C 4 3 2 2 150 C 1 1 0 0 0 1 2 3 4 5 VGS [V] Rev 2.3 0 1 2 3 4 5 ID [A] page 5 2013-11-07 BSL314PE 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-1.5 A; V GS=-10 V V GS(th)=f(T j); V DS=VGS; I D=-6.3 A 250 2.5 200 2 98 % 98 % 150 1.5 VGS(th) [V] RDS(on) [mW] parameter: I D 100 typ 2% 1 typ 50 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [C] 60 100 140 180 Tj [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25C I F=f(V SD) parameter: T j 103 101 25 C Ciss 150 C, 98% 150 C 100 Coss 102 IF [A] C [pF] 25 C, 98% 10-1 Crss 101 10-2 100 10-3 0 5 10 15 20 VDS [V] Rev 2.3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD [V] page 6 2013-11-07 BSL314PE 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=-1.5 A pulsed parameter: T j(start) parameter: V DD 101 12 10 8 VGS [V] IAV [A] 10 V 25 C 100 100 C 6 4V 16 V 4 125 C 2 10-1 0 100 101 102 0 103 1 tAV [s] 2 3 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 A 33 V GS Qg 32 VBR(DSS) [V] 31 30 V gs(th) 29 28 Q g(th) Q sw Q gs 27 -60 -20 20 60 100 Q gate Q gd 140 Tj [C] Rev 2.3 page 7 2013-11-07 BSL314PE TSOP-6 Package Outline: Footprint: Packaging: Dimensions in mm Rev 2.3 page 8 2013-11-07 BSL314PE Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. 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