BC 337 NPN SILICON AF MEDIUM POWER TRANSISTORS BC 338 MICRO ELECTRONICS LID. THE BC337, BC338 ARE NPN SILICON PLANAR CASE TO-92F EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC337, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327, BC328 RESPECTIVELY. 7 C ~ ABSOLUTE MAXIMUM RATINGS BC337 BC338 Collector-Emitter Voltage (VpE=0) Vers 50V 30V Collector-Emitter Voltage (Ip=0) VcEo 45V 25V Emitter-Base Voltage VEBO 5V Collector Current I 0.8A Collector Peak Current (t<10mS) IcM 1.54 Total Power Dissipation (@ Tg <25C) Peot 1.4W a (@ Ta <25C) 625mW Operating Junction & Storage Temperature T3, Tstg ~55 to 450C THERMAL RESISTANCE | Junction to Case Ojc 90C/w max. Junction to Ambient Qja 200C/w = max. Hre vs Ic P TAL 250 2.0 | Mae250C. | Voralv. 200 2 Test 1.5 EB. . Prot FE 150 1.0 100 (Ww) 0.5 50 ~ 0 100 1000 ' 0 50 100 150 200 1 10 ae Ta (C) Ic (ma) 38 HUNG TO ROAD, KWUN TONG, HONG KONG. TELEX 43510 KWUN TONG P, 0, BOX69477 CABLE ADDRESS MICROTRON TELEPHONE:- 3-430181-6 _ tek : FAX: 3-410321 ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted) BC4337 BC338 . arr PARAMETER SYMBOL | win TYP Max | Min TYP max | UNIT | TEST CONDITIG Collector-Emitter Breakdown Voltage |BVcrs 50 30 Vv Icg=0.1mA venc6 Collector-Emitter Breakdown Voltage |LVcEo | 45 25 V | Ic=10mA Ip=0 Kmitter-Base Breakdown Voltage BYEBO 5 5 Vv Ig=0.lmA Ic=0 Collector Cutoff Current Ices 100 nA | Vogs=45V 100 | nA | Vogg=25V 10 pA Verg=45V Ta=125C 10 | pA | Vorg=25V Ta=125C Collector-Emitter Saturation Voltage|Vcn(sat)* 0.7 0.7 | V Tc=500mA Ip=50mA- Base-Emitter Voltage Ver * 1.2 1.2) V Ic=300mA VoE=1V D.C. Current Gain Hpp | 100 630 |100 630 Ig2100mA Vop=1V Group 16 (A) 100 250 |100 250 Group 25 (B 160 400 |160 400 Group 40 (C 250 630 | 250 630 All Groups 40 40 Iq=300mA Vog=1V Hyg Matched Pair Ratio Brel , 1.41 1.41 Ig=100mA vor HPE 2 ee of Current Gain-Bandwidth Product fp 100 100 Miz |Ic-l0mA Vog=5V Collector-Base Capacitance Cob 10 10 pF |Vep=lOV Ip=0 f=1MHz * Pulse Test : Pulse Width=0.3mS, Duty Cycle=1% VoE(sat Vv I fm vs I 1.0 CE(sat) & VBE vs 200 T c VOLT 10 160 4725 Pulse Test fp 120 + (MHz) 80 40 0 100 1900 1 Ic (mA) 10 100 T (mA) 1.78.8300A