BC337-16/25/40BC338-16/25/40 NPN Transistor Preliminary Small Signal Diode TO-92 A Features Epitaxial planar die construction B Surface device type mounting E Moisture sensitivity level 1 G Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant F Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Mechanical Data Case : TO-92 plastic package C Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed Weight : 0.19gram (approximately) High temperature soldering guaranteed: 260C/10s D Ordering Information Package Part No. Packing TO-92 BC337-16 A1 4K/box TO-92 BC337-16 A1G 4K/box TO-92 BC337-25 A1 4K/box TO-92 BC337-25 A1G 4K/box TO-92 BC337-40 A1 4K/box TO-92 BC337-40 A1G 4K/box TO-92 BC338-16 A1 4K/box TO-92 BC338-16 A1G 4K/box TO-92 BC338-25 A1 4K/box TO-92 TO-92 TO-92 BC338-25 A1G BC338-40 A1 BC338-40 A1G 4K/box 4K/box 4K/box Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Collector Current Collector Current Junction and Storage Temperature Range Symbol PD BC337 BC338 Units mW VCBO VCEO VEBO ICM 50 45 30 25 5 1 V V V A IC 800 mA TJ, TSTG -55 to + 150 C 625 Notes:1. Valid provided that electrodes are kept at ambient temperature Version:A12 BC337-16/25/40BC338-16/25/40 NPN Transistor Preliminary Small Signal Diode Rating and Characteristic Curves Version:A12 BC337-16/25/40BC338-16/25/40 NPN Transistor Preliminary Small Signal Diode Electrical Characteristics Ta=25 Type Number Collector-Base Breakdown Voltage BC337 BC338 Collector-Emitter Breakdown Voltage BC337 BC338 Emitter-Base Breakdown Voltage Collector Cut-off Current BC337 BC338 DC current gain Symbol Min IC= 100A V(BR)CBO 50 30 IC= 2mA V(BR)CEO 45 25 IE= 100A V(BR)EBO 5 VCB=50V VCB=30V Max ''''- Units V V V ICBO - 100 100 hFE 100/60 160/60 250/60 250 400 630 - nA VCE=1V VCE=1V VCE=1V IC=100mA/300mA IC=100mA/300mA IC=100mA/300mA Collector-Emitter saturation voltage IC=500mA IB=50mA VCE(sat) '- 0.7 V Base-Emitter on voltage VCE= 1V IC=300mA VBE(on) - 1.2 V IC=10mA f= 50MHz fT 100 - MHz VCB=10V f= 1MHz CCB - 12 PF current gain Group16 25 40 Transition Frequency Collector Base Capacitance V CE=5V Tape & Reel specification Version:A12