Caution: This device is sensiti ve to electrostatic discharge. Users should f ollow ES D handling procedures . 1/9
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FEATURES
• 10µs Short Circuit Withstand
• Soft Punch Through Silic on
• Isolated MMC Base wit h AIN Substrates
• Lead Free construction
• High Thermal Cycling Capability
APPLICATIONS
• High Reliability Inverters
• Motor Controllers
• Traction Drives
• Choppers
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 3600A.
The DIM1200ESM33-F000 is a single switch 3300V
soft punch through, n channel enhancement mode,
insulated gate b ipolar transistor (IGBT) module. The
IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This
device is optimised for traction drives and other
applications requiring high therm al cycling capability.
The module incorporates an electrically isolated
base plat e and lo w ind uctance constr uction enab ling
circuit designers to optimise circuit layouts and
utilise groun ded heat sinks for safety.
ORDERING INFOR MATION
Order As:
DIM1200ESM33-F000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
VCES 3300V
VCE (sat)* (typ) 2.8V
IC(max) 1200A
IC(PK) (max) 2400A
*(measured at the auxiliary terminals)
Fig. 1 Single s witch circuit diagram
Outline type code: E
(See package details for further informat ion)
Fig. 2 Package
DS5831-1.0 JULY. 2005 (LN23824)
DIM1200ESM33-F000
Single Switch IGBT Module
SEMICONDUCTOR
DIM1200ESM33-F000
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ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ ma y c ause perm anent damage to th e dev ice. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safet y pr ec autions should alwa ys be followed. Exposure to Absolute Maximum Ratings may a ffect
device reliability.
Tcase = 25° C unless stated otherwise
Symbol
Parameter
Test Conditions Max. Units
VCES Collector-emitter voltage VGE = 0V, Tj = -25°C 3300 V
VGES Gate-emitter voltage ±20 V
ICContinuous collector current Tcase = 90°C 1200 A
IC(PK) Peak collec to r current 1ms, Tcase =115° C 2400 A
Pmax Max. transistor power dissipation Tcase = 25°C, T
j = 150°C 15.6 kW
I2t Diode I2t value (IGBT arm) VR = 0, tP = 10ms, Tvj = 125°C 720 kA2S
Visol Isolation voltage – per module Commoned term ina ls to base plate. AC RMS, 1 min, 50Hz 6000 V
QPD Partial discharge - per module IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RSM 10 pC
SEMICONDUCTOR
DIM1200ESM33-F000
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THERMAL AND MECHANICAL RATIN GS
Internal insulat ion material: AIN
Baseplate material: AlSiC
Creepage dista nc e: 29mm
Clearance: 20mm
CTI (Critical Tracking Index): 175
Symbol
Parameter
Test Conditions Min. Typ. Max. Units
Rth(j-c) Thermal resistance – transistor (per
switch) Continuous dissipation –
junction to case
- - 8 °C/kW
Rth(j-c) Thermal resistance – diode (per
switch) Continuous dissipation –
junction to case
- - 16 °C/kW
Rth(c-h) Thermal resistance – case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grea se)
- - 6 °C/kW
TjJunction temperature Transistor - - 150 °C
Diode - - 125 °C
Tstg Storage temperat ure range - -40 -125 °C
-Screw t orque Mounting – M6 - - 5 Nm
Electrical connections – M4 - - 2 Nm
Electrical connections – M8 - - 10 Nm
SEMICONDUCTOR
DIM1200ESM33-F000
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ELECTRICAL CHA RACTERISTICS
Tcase = 25° C unless stated otherwise.
Symbol
Parameter
Test Conditions Min. Typ. Max. Units
ICES Collector cut-off current VGE = 0V, VCE = VCES - - 5 mA
VGE = 0V, VCE = VCES, Tcase = 125°C - - 90 mA
IGES Gate leakage current VGE = ±20V, VCE = 0V - - 1 µA
VGE(TH) Gate threshold voltage IC = 120mA, VGE = VCE 5.5 6.5 7.0 V
VCE(sat)
Collector-emitter saturation voltage VGE = 15V, IC = 1200A - 2.8 - V
VGE = 15V, IC = 1200A, Tcase = 125°C - 3.6 - V
IFDiode forward current DC -1200 - A
IFM Diode maximum forward current tp = 1ms -2400 - A
VF
Diode forward voltage IF = 1200A - 2.9 - V
IF = 1200A, Tcase = 125°C - 3.0 - V
Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MH z 216 - nF
Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz 3.3 nF
LMModule inductance – per arm - - 10 - nH
RINT Internal resistance – per arm - - 0.09 -mΩ
SCData Short circuit. Isc Tj = 125°C, Vcc = 2500V, I1-6000 - A
tp ≤ 10µs,
VCE(max) = VCES - L*.di/dt I2-5500 - A
IEC 60747-9
Note:
Measured at the power busbars and not the auxiliary terminals
*L is the circuit inductance + LM
SEMICONDUCTOR
DIM1200ESM33-F000
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ELECTRICAL CHA RACTERISTICS
Tcase = 25° C unless stated otherwise.
Symbol
Parameter
Test Conditions Min. Typ. Max. Units
td(off) Turn-off delay time IC = 1200A -2150 - ns
tfFall time VGE = ±15V -230 - ns
EOFF Turn-off energy loss VCE = 1800V -1550 - mJ
td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.7Ω-1300 - ns
trRise time Cge = 330nF -275 - ns
QgGate charge L ∼ 100nH -30 - µC
EON Turn-on energy loss
IC = 1200A, VGE = ±15V,
VCE = 1800V,RG = 1.65Ω,
Cge = 330nF,
L~ 100nH
-1850 - mJ
Qrr Diode reverse recovery charge IF = 2400A, VR = 1800V, -480 - µC
Irr Diode reverse current dlF/dt = 6000A/µs -1000 - A
EREC Diode reverse recovery energy -450 - mJ
Tcase = 125° C unless stat ed otherwise.
Symbol
Parameter
Test Conditions Min. Typ. Max. Units
td(off) Turn-off delay time IC = 1200A -2200 - ns
tfFall time VGE = ±15V -240 - ns
EOFF Turn-off energy loss VCE = 1800V -1800 - mJ
td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.7Ω-1200 - ns
trRise time Cge = 330nF, L ∼ 50nH -315 - ns
EON Turn-on energy loss
IC = 1200A, VGE = ±15V,
VCE = 1800V,RG = 1.65Ω,
Cge = 330nF,
L~ 100nH
-2600 - mJ
Qrr Diode reverse recovery charge IF = 1200A, VR = 1800V, -900 - µC
Irr Diode reverse current dlF/dt = 6000A/µs -1200 - A
EREC Diode reverse recovery energy -900 - mJ
SEMICONDUCTOR
DIM1200ESM33-F000
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Fig.3 Typical output characteristics Fig.4 Typical output characteristics
Fig.5 Typical switching energy vs collector current Fig.6 Typical switching energy vs gate resistance
SEMICONDUCTOR
DIM1200ESM33-F000
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Fig.7 Diode typical forward characteristics Fig.8 Reverse bias safe operating area
Fig.9 Diode reverse bias safe operating area Fig.10 Transient thermal impedance
SEMICONDUCTOR
DIM1200ESM33-F000
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PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm,
unless stated otherwise.
DO NOT SCALE.
Nominal weight: 2500g
Module outline type code: E
Fig. 11 Package details
SEMICONDUCTOR
DIM1200ESM33-F000
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the
basic semiconductor, and has devel oped a flexible range of heatsink and clamping systems in line with advances in
device voltag es and current capability of our semiconductors.
We offe r an extensi ve range of air and liquid cooled assemblies covering the full r ange of circuit designs in general
use today. The Assembly gr oup offers high quality e n g i neering support dedicated to designing new units to satisfy
the growing needs of our customers.
Using the latest CAD m ethods our team of design and applications engineers aim to provide the Power Assembly
Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been
designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and
liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales
representative or Customer Services.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom. SALES OFFICES
Tel: +44(0)1522 500500 Benelux, Italy & Switzerland: Tel: +33(0)1 60 69 32 36. Fax: +33(0)1 60 69 31 97
Fax: +44(0)1522 500550 France: Tel: (01) 60 69 32 36, (02) 47 55 75 53
Fax: (01) 60 69 31 97, (02) 47 55 75 59
Germany, Northern Europe, Spain & Rest of World:
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
North America: Tel: (440) 259 2060. Fax: (440) 259 2059.
Tel: (949) 733 3005. Fax: (949) 733 2986.
These offices are supported by Representatives and Distributors in many countries
world-wide.
Dynex S emiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status . The annotations are as
follows:-
Target Information: This is the most tentative for m of information and represents a very prelim inary s p ecification. No
actual design wor k on the product has been st arted.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may
change.
Advance Info r m ation: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fix ed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in wri ting) may not be used, applied or re produced for any purpose nor form part of any order or
contract nor to be regarded as a repr esentation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any p roduct or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such inf ormati on and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sol d and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade nam es of their respective owners.
