DIM1200ESM33-F000 Single Switch IGBT Module DS5831-1.0 JULY. 2005 (LN23824) FEATURES * 10s Short Circuit Withstand * Soft Punch Through Silicon * Isolated MMC Base with AIN Substrates * Lead Free construction * High Thermal Cycling Capability KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) 3300V 2.8V 1200A 2400A * (measured at the auxiliary terminals) APPLICATIONS * High Reliability Inverters * Motor Controllers * Traction Drives * Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. Fig. 1 Single switch circuit diagram The DIM1200ESM33-F000 is a single switch 3300V soft punch through, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: Outline type code: E (See package details for further information) DIM1200ESM33-F000 Note: When ordering, please use the whole part number. Fig. 2 Package Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1 /9 DIM1200ESM33-F000 SEMICONDUCTOR ABSOLUTE MAXIMUM RATINGS Stresses above those listed under `Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25 C unless stated otherwise Symbol Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage IC Test Conditions VGE = 0V, Tj = -25 C Max. Units 3300 V 20 V Continuous collector current Tcase = 90 C 1200 A IC(PK) Peak collector current 1ms, Tcase =115 C 2400 A Pmax Max. transistor power dissipation Tcase = 25 C, Tj = 150 C 15.6 kW Diode I t value (IGBT arm) VR = 0, tP = 10ms, Tvj = 125 C 720 kA S Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 6000 V QPD Partial discharge - per module IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RSM 10 pC 2 It 2 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 2 2 /9 DIM1200ESM33-F000 SEMICONDUCTOR THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Parameter Symbol Rth(j-c) Rth(j-c) Rth(c-h) Tj Tstg - AIN AlSiC 29mm 20mm 175 Thermal resistance - transistor (per switch) Thermal resistance - diode (per switch) Test Conditions Continuous dissipation - Min. Typ. Max. Units - - 8 C/kW - - 16 C/kW - - 6 C/kW junction to case Continuous dissipation - junction to case Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 C Diode - - 125 C -40 - 125 C Mounting - M6 - - 5 Nm Electrical connections - M4 - - 2 Nm Electrical connections - M8 - - 10 Nm Storage temperature range Screw torque - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 3 /9 DIM1200ESM33-F000 SEMICONDUCTOR ELECTRICAL CHARACTERISTICS Tcase = 25 C unless stated otherwise. Symbol Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 5 mA VGE = 0V, VCE = VCES, Tcase = 125 C - - 90 mA Gate leakage current VGE = 20V, VCE = 0V - - 1 A VGE(TH) Gate threshold voltage IC = 120mA, VGE = VCE 5.5 6.5 7.0 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 1200A - 2.8 - V VGE = 15V, IC = 1200A, Tcase = 125 C - 3.6 - V ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC - 1200 - A IFM Diode maximum forward current tp = 1ms - 2400 - A VF Diode forward voltage IF = 1200A - 2.9 - V IF = 1200A, Tcase = 125 C - 3.0 - V - nF Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz 216 Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz 3.3 LM Module inductance - per arm - - 10 - nH RINT Internal resistance - per arm - - 0.09 - m SCData Short circuit. Isc nF Tj = 125 C, Vcc = 2500V, I1 - 6000 - A tp 10s, VCE(max) = VCES - L*.di/dt I2 - 5500 - A IEC 60747-9 Note: Measured at the power busbars and not the auxiliary terminals * L is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 4 /9 DIM1200ESM33-F000 SEMICONDUCTOR ELECTRICAL CHARACTERISTICS Tcase = 25 C unless stated otherwise. Symbol Test Conditions Min. Typ. Max. Units Turn-off delay time IC = 1200A - 2150 - ns Fall time VGE = 15V - 230 - ns EOFF Turn-off energy loss VCE = 1800V - 1550 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.7 - 1300 - ns Cge = 330nF - 275 - ns L 100nH - 30 - C - 1850 - mJ td(off) tf tr Qg Parameter Rise time Gate charge EON Turn-on energy loss IC = 1200A, VGE = 15V, VCE = 1800V,RG = 1.65, Cge = 330nF, L~ 100nH Qrr Diode reverse recovery charge IF = 2400A, VR = 1800V, - 480 - C Irr Diode reverse current dlF/dt = 6000A/s - 1000 - A - 450 - mJ Test Conditions Min. Typ. Max. Units Turn-off delay time IC = 1200A - 2200 - ns Fall time VGE = 15V - 240 - ns EOFF Turn-off energy loss VCE = 1800V - 1800 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.7 - 1200 - ns Rise time Cge = 330nF, L 50nH - 315 - ns - 2600 - mJ EREC Diode reverse recovery energy Tcase = 125 C unless stated otherwise. Symbol td(off) tf tr Parameter EON Turn-on energy loss IC = 1200A, VGE = 15V, VCE = 1800V,RG = 1.65, Cge = 330nF, L~ 100nH Qrr Diode reverse recovery charge IF = 1200A, VR = 1800V, - 900 - C Irr Diode reverse current dlF/dt = 6000A/s - 1200 - A - 900 - mJ EREC Diode reverse recovery energy Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 5 /9 DIM1200ESM33-F000 SEMICONDUCTOR Fig.3 Typical output characteristics Fig.4 Typical output characteristics Fig.5 Typical switching energy vs collector current Fig.6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 6 /9 DIM1200ESM33-F000 SEMICONDUCTOR Fig.7 Diode typical forward characteristics Fig.8 Reverse bias safe operating area Fig.9 Diode reverse bias safe operating area Fig.10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 7 /9 DIM1200ESM33-F000 SEMICONDUCTOR PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 2500g Module outline type code: E Fig. 11 Package details Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 8 /9 DIM1200ESM33-F000 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33(0)1 60 69 32 36. Fax: +33(0)1 60 69 31 97 France: Tel: (01) 60 69 32 36, (02) 47 55 75 53 Fax: (01) 60 69 31 97, (02) 47 55 75 59 Germany, Northern Europe, Spain & Rest of World: Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 North America: Tel: (440) 259 2060. Fax: (440) 259 2059. Tel: (949) 733 3005. Fax: (949) 733 2986. These offices are supported by Representatives and Distributors in many countries world-wide. Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 9 /9