GBPC15005/W-GBPC1510/W VISHAY Vishay Lite-On Power Semiconductor 15A Glass Passivated Bridge Rectifier Features Glass passivated die construction Diffused junction Low reverse leakage current Low power loss, high efficiency Surge overload rating to 300A peak heat dissipation Electrically isolated metal base for maximum Case to terminal isolation voltage 2500V UL listed under recognized component index , file number E95060 Absolute Maximum Ratings Tj = 25C Repetitive peak reverse voltage GBPC15005/W | Vrarm 50 Vv =Working peak reverse voltage GBPC1501/W | =Vawm 100 Vv =DC Blocking voltage GBPC1502/W =VpR 200 V GBPC1504/W 400 Vv GBPC1506/W 600 Vv GBPC1508/W 800 Vv GBPC1510/W 1000 Vv Peak forward surge current lesm 300 A Average forward current Tc=70C lEAy 15 A Junction and storage temperature range T=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltag Ir=7.5A Ve 1.1 Vv Reverse current Tce=25C IR 5 uA To=1 25C IR 500 uA I@t Rating for fusing 4 374 | Aes Diode capacitance VR=4V, f=1MHz Cp 300 pF Thermal resistance junction to case _| mounted on heatsink Rthuc 5.3 KAW Rev. A2, 24-Jun-98 GBPC15005/WGBPC1510/W Vishay Lite-On Power Semiconductor Characteristics (Tj = 25C unless otherwise specified) ~ 20 nted on a 1000 < 220 x 220 x 50mm ~ = AL plate heatsink LL c a e 45 oO 5 o 8 2 P x o SO = oO 5 10 & 100 ic Oo oO e 3 a a 35 I a 2 Oo _ Resistive or inductive load 0 10 0 25 50 75 100 125 150 0.1 1.0 10 100 15670 Tamb Ambient Temperature ( C ) 15673 Vr Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Ambient Temperature 100 100 EF = 125C < = T, = 130C yr 10 = 10 6 5 5 3 o 50V 400V g 1.0 2 1.0 600V -1000V oO 5 5 uo o Tj = 25C I _u Od fe Ol T= 25C IF Pulse Width = 300 ps 0.01 0.01 0 0.2 0406 08 1.0 1.2 14 161.8 0 20 40 60 80 100 120 140 15671 Ve Forward Voltage ( V ) 15674 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage Zz 400 x Single Half Sine-Wave (JEDEC Method) oO 6 300 oO 2 a B 200 oO = o Ww s % 100 a | a T)= 150C = 0 1 10 100 15672 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 - GBPC15005/W-GBPC1510/W VISHAY Vishay Lite-On Power Semiconductor Dimensions in mm A C H GBPC (AC) GBPC/GBPC-W | Jim Min Max = of Wf A | 2830 | 28.80 B 7.40 8.00 ()) (AC) c|_16.10 17.10 Q E 18.80 21.30 H G 13.90 14.80 H | Hole for#10 screw = Cor 05.08 05.59 Li LY 04 | tol J 11.60 18.60 ' a a K 10.90 11.90 L 60.9] 01.0] M 31.80 - A NP 7.40 5.00 P H P 17.60 18.60 ALL Dimensions in. mm GBPC-W a (AC)} + (+) ; os S| =< W" Suffix Designates Wire Leads , . No Suffix Designates Faston Terminals (-) (AC) { & | technical drawings according to DIN - specifications 14477 Case: molded plastic Polarity: as marked on case Approx. weight: GBPC 18 grams, GBPC-W 14.5 grams Mounting: through hole for #10 screw Mounting torque: 8.0 Inch-pounds maximum Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4) GBPC15005/WGBPC1510/W Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98