T4-LDS-0220-1, Rev. 2 (7/29/13) ©2013 Microsemi Corporation Page 1 of 5
1N821UR-1 – 1N829AUR-1
Availa ble on
commercial
versions
6.2 & 6.55 Volt Zener Reference Diodes
Qualified per MIL-PRF-19500/159
*Qualified Levels:
JAN, JANTX,
JANTXV and JANS
(available on some part
numbers)
DESCRIPTION
The 1N821UR-1 – 1N829AUR-1 series of surface mount temperature compensated reference
diodes provides both 6.2 V and 6.55 V nominal voltages and temperature coefficients as low
as 0.0005 %/oC at a Zener test current of 7.5 mA. These glass surface mount DO-213AA
(MELF) reference diodes are optionally available as RoHS compliant for commercial
applications. This type of bonded Zener package construction is also available in JAN,
JANTX, JANTXV and JANS military qualifications (RoHS compliant option not applicable).
Microsemi also offers other Zener Reference Diode products for a variety of voltages up to 200
V.
DO-213AA
Package
Also available in:
DO-35 (DO-204AH)
(axial-leaded)
1N821-1 – 1N829-1
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Surface mount equivalent of J ED EC registered 1N 821 – 1N829 series.
• Zener impedance values of 10 ohms and 15 ohms are available.
• Reference voltage selection of 6.2 V & 6.55 V +/-5% with further tight tolerance options on
commercial at lower voltage . (Excludes 1N826 and 1N828.)
• Temperature compensated.
• Internal metallurgical bond.
• Double plug cons tr uc tion .
• *JAN, JANTX, JANTXV and JANS qualification per MIL-PRF-19500/159 available on 1N821-1, 823-
1, 825-1, 827-1 and 829-1.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Provides minimal volt age cha n ges ov er a broad temper at ure r ange.
• For instrumentation and other circuit designs requiring a stable voltage reference.
• Maximum temperature coefficient selections available from 0.01 %/ºC to 0.0005 %/ºC.
• Tight reference voltage tolerances of 1%, 2%, 3%, etc, available on commercial with center nominal
value of 6.2 V by specia l request. (Excludes 1N826 and 1N828.)
• Small surface-mo unt foot pr int .
• Non-sensitive to ESD per MIL-STD-750 method 1020.
• Typical low capacitance of 100 pF or less.
MAXIMUM RATINGS @ TA = +25 ºC unless otherwise specified
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage temperature
TJ and TSTG
-55 to +175
oC
Power Dissipation (1)
PD
500
mW
Maximum Zener Current
IZM
70
mA
Solder Pad T emp er atur es at 10 s
TSP
260
oC
Notes: 1. @ TL = 25 oC and maximum current IZM of 70 mA. For optimum voltage-temperature stability, IZ = 7.5
mA (less than 50 mW in dissipated power). Derate at 3.33 mW/oC above TA = +25 oC.
T4-LDS-0220-1, Rev. 2 (7/29/13) ©2013 Microsemi Corporation Page 2 of 5
1N821UR-1 – 1N829AUR-1
MECHANICAL and PACKAGING
• CASE: Hermetically sealed glass case. DO-213AA package.
• TERMINALS: Tin-lead (military) or RoHS compliant annealed matte-tin plating (commercial grade only) solderable per M IL-STD-
750, Method 2026.
• MARKING: Cathode band (except double anode 1N822 and 1N824).
• POLARITY: Reference diode to be operated with the banded end positive with respect to the opposite end.
• MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximately +6PPM/°C. The
COE of the mounting surface system should be selected to provide a suitable match with this device.
• TAPE & REEL option: Standard per EIA-481-B with 12 mm tape (add “TR” suffix to part number). Consult factory for quantities.
• WEIGHT: Approximately 0.04 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
Applicable to: JAN, JANTX, JANTXV and JANS of 1N821, 1N823, 1N825, 1N827, and 1N829 only:
JAN 1N821 UR -1
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
Metallurgical Bond
Surface Mount P acka ge
JEDEC type number
(see Electrical Characteristics
table)
Applicable to: commercial 1N821, 1N823, 1N825, 1N827, and 1N829 only:
1N821 A UR -1 (e3)
JEDEC type number
(see Electrical Characteristics
table)
Zener Impedance
A = 10 ohms
Blank = 15 ohms
RoHS Compli ance
e3 = RoHS compliant
Blank = non-RoHS compliant
Surface Mount P acka ge
Metallurgical Bond
Applicable to: 1N822, 1N824, 1N826 and 1N828 only:
1N822 UR -1 (e3)
JEDEC type number
(see Electrical Characteristics
table)
Surface Mount P acka ge
RoHS Compli ance
e3 = RoHS compliant
Blank = non-RoHS compliant
Metallurgical Bond
T4-LDS-0220-1, Rev. 2 (7/29/13) ©2013 Microsemi Corporation Page 3 of 5
1N821UR-1 – 1N829AUR-1
SYMBOLS & DEFINITIONS
Symbol
Definition
IR
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
IZ, IZT, IZK
Regulator Current: The dc regulator current (IZ), at a specified test point (IZT), near breakdown knee (IZK).
V
Z
Zener Voltage: The Zener voltage the device will exhibit at a specified current (I
Z
) in its breakdown region.
ZZT or ZZK
Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a
specified rms current modulation (typically 10% of IZT or IZK) and superimposed on IZT or IZK respectively.
ELECTRICAL CHARACTERISTICS @ 25 oC (unless otherwise specified)
JEDEC TYPE
NUMBER
ZENER
VOLTAGE
VZ @ IZT
(Note 3)
ZENER
TEST
CURRENT
IZT
MAXIMUM
ZENER
IMPEDANCE
ZZT @ IZT
(Note 1)
MAXIMUM
REVERSE
CURRENT
IR @ 3 V
VOLTAGE
TEMPERATURE
STABILITY
(
∆
VZT MAX)
-55oC to +100oC
(Note 2 and 3)
EFFECTIVE
TEMPERATURE
COEFFICIENT
α
VZ
Volts
mA
Ohms
µA
mV
% / oC
1N821UR-1
1N821AUR-1
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
96
96
0.01
0.01
1N822UR-1†
5.9-6.5
7.5
15
2
96
0.01
1N823UR-1
1N823AUR-1
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
48
48
0.005
0.005
1N824UR-1†
5.9-6.5
7.5
15
2
48
0.005
1N825UR-1
1N825AUR-1
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
19
19
0.002
0.002
1N826UR-1
6.2-6.9
7.5
15
2
20
0.002
1N827UR-1
1N827AUR-1
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
9
9
0.001
0.001
1N828UR-1
6.2-6.9
7.5
15
2
10
0.001
1N829UR-1
1N829AUR-1
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
5
5
0.0005
0.0005
† Double Anode: Electrical specifications apply under both bias polarities.
NOTES: 1. Zener impedance is measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25 oC.
2. The maxim um allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the
specified mV change at any discrete temperature between the establis hed l imits.
3. Volt age meas urem ents to be performed 15 seconds after applicat i on of dc current.
4. This product s eri es has been previously ident ifi ed as CDLL821 thru CDLL829A-1. This alternat e number may still be in use.
T4-LDS-0220-1, Rev. 2 (7/29/13) ©2013 Microsemi Corporation Page 4 of 5
1N821UR-1 – 1N829AUR-1
GRAPHS
Operating Current IZT (mA)
FIGURE 1
TYPICAL ZENER IMPEDANCE vs OPERATING CURRENT
IZ – Operating Current (mA) IZ – Operating Current (mA)
FIGURE 2 FIGURE 3
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT TYPICAL CHANGE OF ZENER VOLTAGE
WITH CHANGE IN OPERATING CURRENT WITH CHANGE IN OPERATING CURRENT
The curve shown in Figure 2 is typical of the diode series and greatly simplifies the
estimation of the Temper at u re Coe ffi cient (TC) when the di ode is operated at
currents other than 7.5 mA.
EXAMPLE: A diode in this series is operated at a current of 7.5 mA and has
specifi ed T e mper at ure Co efficient (TC) limits of +/-0.005 %/oC. To obtain the
typical Temperature Coefficient limits for this same diode operated at a current of
6.0mA, the new TC limits (%/oC) can be estimated using the graph in Figure 2. At
a test current of 6.0mA the change in Temperature Coefficient (TC) is
approximately –0.0006 %/oC. The algebraic sum of +/-0.005 %oC and –0.0006
%/oC gives the new estimated limits of +0.0044 %/oC and -0.0056 %/oC.
Change in temperature coefficient (%/oC)
This curve i n Figu re 3 illustrates the change of diode voltage
arising from the effect of impedance. It is in effect an exploded
view of the Zener operating region of the I-V characteristic.
In conjunction with Figure 2, this curve can be used to estimate
total voltage regulation under conditions of both varying
temperature and current.
∆V
Z
– Change in Zener Voltage (mV)
Zener Impedance IZT (Ohms)
T4-LDS-0220-1, Rev. 2 (7/29/13) ©2013 Microsemi Corporation Page 5 of 5
1N821UR-1 – 1N829AUR-1
PACKAGE DIMENSIONS
Symbol
Dimensions
Inch
Millimeters
Min
Max
Min
Max
BD
0.063
0.067
1.60
1.70
BL
0.130
0.146
3.30
3.71
ECT
0.016
0.022
0.41
0.56
S
0.001 Min
0.03 Min
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
PAD LAYOUT
Inch
mm
A
0.200
5.08
B
0.055
1.40
C
0.080
2.03
