PDE-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] OUTLINE DRAWING * Low saturation voltage and high speed. * Low turn-OFF switching loss. * Low noise due to built-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) * High reliability structure. * Isolated heat sink (terminals to base). Unit in mm 2- 5.6 E2 G2 3-M5 C1 E2 C2E1 G2 E2 23 23 40 0.8 35 7 12 C1 30 E2 4-Fast-on Terminal #110 18.5 17 25 35 45 CIRCUIT DIAGRAM C2E1 92 80 20 19 G1 E1 FEATURES 6 E1 G1 Weight230g ABSOLUTE MAXIMUM RATINGS (TC=25C) Item Collector-Emitter Voltage Gate-Emitter Voltage DC Collector Current 1ms DC Forward Current 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Terminals Screw Torque Mounting Notes; *1 : RMS current of diode 60 Arms *2 ,*3 : Recommended value 1.67 N*m Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Viso Unit V V - N*m A Value 1200 20 200 400 *1 A W C C VRMS 200 400 1250 -40 ~ +150 -40 ~ +125 2500(AC 1 minute) *2 1.96 *3 1.96 CHARACTERISTICS (TC=25C) Item Symbol Unit Min. Typ. Max. Test Conditions Collector-Emitter Cut-Off Current ICES mA 1.0 VCE=1200V, VGE=0V Gate-Emitter Leakage Current IGES nA 500 VGE=20V, VCE=0V Collector-Emitter Saturation Voltage VCE(sat) V 2.2 2.8 IC=200A, VGE=15V Gate-Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC=200mA Input Capacitance Cies pF 18000 VCE=10V, VGE=0V, f=1MHz Rise Time tr 0.15 0.3 VCC=600V, IC=200A *4 Turn-On Time ton 0.3 0.6 RG=6.2 Switching Times s Fall Time tf 0.1 0.3 VGE=15V Inductive Load Turn-Off Time toff 0.5 1.0 IF=200A Reverse Recovery Time trr 0.2 0.4 s Peak Forward Voltage Drop VFM V 2.5 3.5 IF=200A, VGE=0V IGBT Rth(j-c) 0.1 Thermal Impedance Junction to case C/W FWD Rth(j-c) 0.2 Notes; *4 : RG value is the test condition's value for decision of the switching times, not recommended value, please determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. Remark; For actual application,please confirm this spec.sheet is the newest revision. http://store.iiic.cc/ VGE=15V14V13V12V TYPICAL VGE=15V14V13V12V 400 TYPICAL Tc=125C Tc=25C 11V 300 Pc=1250W 200 10V Collector Current, Ic (A) Collector Current, Ic (A) 400 11V 300 200 10V 100 100 9V 9V 0 0 0 2 4 6 8 0 10 2 4 6 8 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage TYPICAL TYPICAL 10 Tc=25C Collector to Emitter Voltage, VCE (V) Collector to Emitter Voltage, VCE (V) 10 8 6 4 Ic=400A Ic=200A 2 Tc=125C 8 6 4 Ic=400A Ic=200A 2 0 0 0 5 10 15 20 0 Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage 5 10 15 TYPICAL 400 Vcc=600V Ic =200A Tc=25C Forward Current, IF (A) 15 10 5 20 Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage TYPICAL 20 Gate to Emitter Voltage, VGE (V) 10 VGE=0V Tc=25C Tc=125C 300 200 100 0 0 400 800 1200 1600 2000 0 0 1 2 3 4 5 Forward Voltage, VF (V) Forward voltage of free-wheeling diode Gate Charge, QG (nC) Gate charge characteristics PDE-M200GR12A-0 http://store.iiic.cc/ TYPICAL TYPICAL 10 Vcc=600V VGE=15V RG=6.2 TC=25C Inductive Load Switching Time, t (s) Switching Time, t (s) 1.5 1 0.5 toff VCC=600V VGE=15V IC =200A TC=25C Inductive Load toff ton 1 tr tf 0.1 ton tr tf 0.01 0 0 100 200 1 300 10 100 Gate Resistance, RG () Switching time vs. Gate resistance Collector Current, IC (A) Switching time vs. Collector current TYPICAL TYPICAL 100 VCC=600V VGE=15V RG=6.2 TC=125C Inductive Load 30 Eton Switching Loss, Eton, Etoff, Err (mJ/pulse) Switching Loss, Eton,Etoff, Err (mJ/pulse) 40 Eton Etoff 20 10 0 Err 0 100 200 Etoff 10 Err 1 VCC=600V VGE=15V IC =200A TC=125C Inductive Load 0.1 300 1 10000 100 Transient Thermal Impedance, Rth(j-c) (C/W) 1 VGE=15V RG=6.2 TC125C 1000 Collector Current, Ic (A) 10 Gate Resistance. RG () Switching loss vs. Gate resistance Collector Current. IC (A) Switching loss vs. Collector current 100 10 1 0 200 400 600 800 1000 1200 1400 Diode IGBT 0.1 0.01 0.001 0.001 Collector to Emitter Voltage, VCE (V) Reverse biased safe operating area 0.01 0.1 1 10 Time, t (s) Transient thermal impedance PDE-M200GR12A-0 http://store.iiic.cc/ HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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