© 2013 IXYS CORPORATION, All Rights Reserved
TrenchTM
Power MOSFETs
N-Channel Enhancement Mode
VDSS = 250V
ID25 = 76A
RDS(on) ≤≤
≤≤
≤ 42mΩΩ
ΩΩ
Ω
DS99663F(04/13)
Typical Avalanched BV = 300V
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 250 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ250 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C76A
IDM TC= 25°C, Pulse Width Limited by TJM 170 A
IATC= 25°C8A
EAS TC= 25°C 1.5 J
PD TC= 25°C 460 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.
MdMounting Torque (TO-220, TO-3P & TO-247) 1.13/10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
TO-3P 5.5 g
TO-247 6.0 g
Features
z Avalanche Rated
zHigh Current Handling Capability
z Fast Intrinsic Rectifier
zLow RDS(on)
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zAC Motor Drives
zUninterruptible Power Supplies
zHigh Speed Power Switching
Applications
GDS
TO-220AB (IXTP)
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
TO-3P (IXTQ)
D
G
S
TO-247(IXTH)
GDS
D (Tab)
D (Tab)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 250 V
VGS = 0V, ID = 10mA 300 V
VGS(th) VDS = VGS, ID = 250μA 3.0 5.0 V
IGSS VGS = ± 20V, VDS = 0V ± 100 nA
IDSS VDS = VDSS, VGS = 0V 2 μA
TJ = 125°C 200 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 42 mΩ
TO-263 AA (IXTA)
G
S
D (Tab)
IXTA76N25T
IXTP76N25T
IXTQ76N25T
IXTH76N25T
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA76N25T IXTP76N25T
IXTQ76N25T IXTH76N25T
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 43 72 S
Ciss 4920 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 470 pF
Crss 70 pF
td(on) 22 ns
tr 25 ns
td(off) 56 ns
tf 29 ns
Qg(on) 92 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS , ID = 25A 28 nC
Qgd 21 nC
RthJC 0.27 °C /W
RthCH TO-220 0.50 °C W
TO-3P & TO-247 0.25 °C W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 76 A
ISM Repetitive, Pulse Width Limited by TJM 200 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 148 ns
IRM 21 A
QRM 1.6 μC
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
IF = 38A, -di/dt = 250A/μs
VR = 100V, VGS = 0V
© 2013 IXYS CORPORATION, All Rights Reserved
IXTA76N25T IXTH76N25T
IXTP76N25T IXTQ76N25T
TO-247 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
TO-3P Outline
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 Outline
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA76N25T IXTP76N25T
IXTQ76N25T IXTH76N25T
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
00.511.522.533.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
6V
5V
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
180
0 2 4 6 8 10 12 14 16 18 20
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
5V
6V
7V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 125ºC
0
10
20
30
40
50
60
70
80
01234567
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 38A Valu e vs.
Junction Tem perature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 76A
I
D
= 38A
Fig. 5. R
DS(on)
Normalized to I
D
= 38A Valu e vs.
Drain Current
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
0 20 40 60 80 100 120 140 160 180
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fi g . 6. D r ai n C u r r en t vs. C ase Temp er atu r e
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
IXTA76N25T IXTH76N25T
IXTP76N25T IXTQ76N25T
Fig. 7. Input Adm ittance
0
20
40
60
80
100
120
140
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
0 20 40 60 80 100 120 140 160 180
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
120
140
160
180
200
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 125V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. F o r ward -B i as Safe Op er ati ng Area
0.1
1
10
100
1000
1 10 100 1,000
V
DS
- Volts
I
D
- Amperes
1ms
10ms
R
DS(on)
Limit
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
25µs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA76N25T IXTP76N25T
IXTQ76N25T IXTH76N25T
Fi g. 14. R esist i ve Tu r n -o n R i se Ti me vs.
Drain Current
6
10
14
18
22
26
30
34
38
15 20 25 30 35 40 45 50 55 60 65 70 75 80
ID - Amperes
t
r
- Nanoseconds
T
J
= 125ºC
T
J
= 25ºC
R
G
= 3.3 , V
GS
= 15V
V
DS
= 125V
Fi g . 15 . R esi sti v e Tu rn - o n Swi tc h i n g Ti mes vs.
Gate Re si stance
10
12
14
16
18
20
22
24
26
28
30
3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
t
r
- Nanoseconds
20
21
22
23
24
25
t
d
(
o n
)
- Nanoseconds
t
r
td(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 125V
I
D
= 76A
I
D
= 38A
Fig. 16. Resistive T urn-off Switching Tim es vs.
Junction Temperatur e
10
14
18
22
26
30
34
38
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
f
- Nanoseconds
40
44
48
52
56
60
64
68
t
d
(
o f f
)
- Nanoseconds
t f
td(off)
- - - -
R
G
= 3.3, V
GS
= 15V
V
DS
= 125V
I
D
= 38A
I
D
= 76A
Fi g. 17. R esist i ve Tu r n -o ff Switc h i n g Times vs.
Drain Current
12
14
16
18
20
22
24
26
28
30
32
15 20 25 30 35 40 45 50 55 60 65 70 75 80
ID - Amperes
t
f
- Nanoseconds
43
46
49
52
55
58
61
64
67
70
73
t
d
(
o f f
)
- Nanoseconds
t
f
td(off)
- - - -
R
G
= 3.3, V
GS
= 15V
V
DS
= 125V
T
J
= 125ºC
T
J
= 25ºC
T
J
= 125ºC
T
J
= 25ºC
Fi g. 18. R esistive Tur n-o ff Switch in g Times vs.
Gate Re si stan ce
10
20
30
40
50
60
70
80
3 4 5 6 7 8 9 101112131415
RG - Ohms
t
f
- Nanoseconds
50
70
90
110
130
150
170
190
t
d
(
o f f
)
- Nanoseconds
t
f
td(off)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 125V
I
D
= 38A, 76A
Fi g. 13. R esi st i ve Tu r n -o n R ise Ti me vs.
Jun ct ion Temper at u r e
6
10
14
18
22
26
30
34
38
25 35 45 55 65 75 85 95 105 115 125
T J - Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3 , V
GS
= 15V
V
DS
= 125V
I
D
= 38A
I
D
= 76A
© 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_76N25T(6E)9-28-10-B
IXTA76N25T IXTH76N25T
IXTP76N25T IXTQ76N25T
Fig. 19. Maximum Transient T herm al Im pedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
