TrenchTM Power MOSFETs N-Channel Enhancement Mode TO-263 AA (IXTA) VDSS ID25 IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T RDS(on) TO-3P (IXTQ) G G D (Tab) DS G D D (Tab) S Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 250 250 V V VGSS VGSM Continuous Transient 20 30 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 76 170 A A IA EAS TC = 25C TC = 25C 8 1.5 A J PD TC = 25C 460 W -55 ... +150 150 -55 ... +150 C C C TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s 300 260 C C FC Md Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220, TO-3P & TO-247) 1.13/10 N/lb. Nm/lb.in. Weight TO-263 TO-220 TO-3P TO-247 2.5 3.0 5.5 6.0 g g g g G Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA VGS = 0V, ID = 10mA 250 VGS(th) VDS = VGS, ID = 250A 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) V 100 nA TJ = 125C VGS = 10V, ID = 0.5 * ID25, Note 1 (c) 2013 IXYS CORPORATION, All Rights Reserved D (Tab) D = Drain Tab = Drain Features z Avalanche Rated High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on) z Advantages z z z z 5.0 S Easy to Mount Space Savings High Power Density Applications V V 300 D G = Gate S = Source z Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D (Tab) TO-247(IXTH) Symbol TJ TJM Tstg 250V 76A 42m Typical Avalanched BV = 300V TO-220AB (IXTP) S = = 2 A 200 A 42 m z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS99663F(04/13) IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 * ID25, Note 1 43 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 15V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 3.3 (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 * VDSS , ID = 25A Qgd 72 S 4920 pF 470 pF 70 pF 22 ns 25 ns 56 ns 29 ns 92 nC 28 nC 21 nC 0.27 C /W RthJC RthCH TO-220 0.50 C W TO-3P & TO-247 0.25 C W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Note Characteristic Values Min. Typ. Max. 76 A Repetitive, Pulse Width Limited by TJM 200 A IF = IS, VGS = 0V, Note 1 1.5 V IF = 38A, -di/dt = 250A/s VR = 100V, VGS = 0V 148 ns 21 A 1.6 C 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA76N25T IXTH76N25T IXTP76N25T IXTQ76N25T TO-220 Outline TO-263 Outline Pins: 1 - Gate 3 - Source 1 - Gate 2,4 - Drain 3 - Source TO-3P Outline TO-247 Outline Dim. 1 2 P 3 e Terminals: 1 - Gate 3 - Source 2 - Drain (c) 2013 IXYS CORPORATION, All Rights Reserved Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 2 - Drain IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T Fig. 2. Extended Output Characteristics @ T J = 25C Fig. 1. Output Characteristics @ T J = 25C 180 80 VGS = 10V 8V 70 140 60 7V ID - Amperes ID - Amperes VGS = 10V 8V 160 50 6V 40 30 7V 120 100 80 6V 60 20 40 10 20 5V 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 80 14 16 18 20 3.2 VGS = 10V 7V 70 R DS(on) - Normalized 50 6V 40 30 20 5V 10 VGS = 10V 2.8 60 ID - Amperes 12 Fig. 4. RDS(on) Normalized to ID = 38A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125C 2.4 I D = 76A 2.0 I D = 38A 1.6 1.2 0.8 0 0.4 0 1 2 3 4 5 6 7 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 38A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 80 3.6 3.2 70 VGS = 10V TJ = 125C 60 2.8 ID - Amperes R DS(on) - Normalized 10 VDS - Volts VDS - Volts 2.4 2.0 1.6 50 40 30 20 TJ = 25C 1.2 10 0 0.8 0 20 40 60 80 100 120 140 160 180 ID - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTA76N25T IXTH76N25T IXTP76N25T IXTQ76N25T Fig. 8. Transconductance Fig. 7. Input Admittance 120 140 TJ = - 40C 120 100 25C g f s - Siemens ID - Amperes 100 80 60 125C 60 40 TJ = 125C 25C - 40C 40 80 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 60 VGS - Volts 10 180 9 VDS = 125V 160 8 I D = 25A 140 7 VGS - Volts IS - Amperes 100 120 140 160 180 90 100 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 120 100 80 I G = 10mA 6 5 4 TJ = 125C 60 80 ID - Amperes 3 40 2 TJ = 25C 1 20 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 10 20 30 40 VSD - Volts 50 60 70 80 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 10,000 100 25s 1,000 ID - Amperes Capacitance - PicoFarads RDS(on) Limit Ciss Coss 100s 10 100 1 1ms TJ = 150C Crss TC = 25C f = 1 MHz Single Pulse 10ms 0.1 10 0 5 10 15 20 25 VDS - Volts (c) 2013 IXYS CORPORATION, All Rights Reserved 30 35 40 1 10 100 VDS - Volts 1,000 IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 38 38 34 26 I D = 76A 22 I D = 38A 18 26 22 RG = 3.3 , VGS = 15V VDS = 125V 18 14 14 10 10 TJ = 125C 6 6 25 35 45 55 65 75 85 95 105 115 15 125 25 30 40 45 50 55 60 65 70 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 28 tr 26 TJ = 125C, VGS = 15V 75 38 td(on) - - - - 34 64 23 20 18 22 16 I D = 76A t f - Nanoseconds 22 30 60 26 56 22 52 I D = 76A 18 48 tf 21 RG = 3.3, VGS = 15V 14 12 td(off) - - - - t d ( o f f ) - Nanoseconds I D = 38A I D = 38A t d ( o n ) - Nanoseconds VDS = 125V 80 68 24 14 44 VDS = 125V 10 20 3 4 5 6 7 8 9 10 11 12 13 14 10 15 25 35 45 55 RG - Ohms 73 TJ = 25C tf 70 115 40 125 td(off) - - - - 58 RG = 3.3, VGS = 15V 55 VDS = 125V 18 52 16 49 TJ = 125C 14 td(off) - - - - 170 TJ = 125C, VGS = 15V t f - Nanoseconds 61 tf 20 105 VDS = 125V 60 150 50 130 I D = 38A, 76A 40 110 30 90 20 70 46 12 43 15 20 25 30 35 40 45 50 55 60 65 70 75 80 ID - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 50 3 4 5 6 7 8 9 10 RG - Ohms 11 12 13 14 15 t d ( o f f ) - Nanoseconds 24 t d ( o f f ) - Nanoseconds 64 TJ = 125C TJ = 25C 95 190 67 22 85 80 70 28 26 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 32 30 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current t f - Nanoseconds 35 ID - Amperes 25 24 20 T J - Degrees Centigrade 30 t r - Nanoseconds TJ = 25C 30 t r - Nanoseconds 30 t r - Nanoseconds 34 RG = 3.3 , VGS = 15V VDS = 125V IXTA76N25T IXTH76N25T IXTP76N25T IXTQ76N25T Fig. 19. Maximum Transient Thermal Impedance Z (th )J C - C / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_76N25T(6E)9-28-10-B