IRHM4250U - International Rectifier

Absolute Maximum Ratings

Parameter Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current 26

ID @ VGS = 12V, TC = 100°C Continuous Drain Current 16

IDM Pulsed Drain Current ➀104

PD @ TC = 25°C Max. Power Dissipation 150 W

Linear Derating Factor 1.2 W/°C

VGS Gate-to-Source Voltage ±20 V

EAS Single Pulse Avalanche Energy ➁500 mJ

IAR Avalanche Current ➀26 A

EAR Repetitive Avalanche Energy ➀15 mJ

dv/dt Peak Diode Recovery dv/dt ➂5.0 V/ns

TJOperating Junction -55 to 150

TSTG Storage Temperature Range

Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)

Weight 9.3 (Typical) g

PD - 90674C

Pre-Irradiation

International Rectifier’s RADHard HEXFET® technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both T otal Dose and Single Ev ent Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

RADIATION HARDENED

JANSR2N7269

POWER MOSFET

THRU-HOLE (TO-254AA)

10/11/00

www.irf.com 1

200V, N-CHANNEL

RAD Hard

™

HEXFET

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on) IDQPL Part Number

IRHM7250 100K Rads (Si) 0.10Ω26A JANSR2N7269

IRHM3250 300K Rads (Si) 0.10Ω26A JANSF2N7269

IRHM4250 600K Rads (Si) 0.10Ω26A JANSG2N7269

IRHM8250 1000K Rads (Si) 0.10Ω26A JANSH2N7269

Features:

nSingle Event Effect (SEE) Hardened

nLow RDS(on)

nLow Total Gate Charge

nProton Tolerant

nSimple Drive Requirements

nEase of Paralleling

nHermetically Sealed

nCeramic Eyelets

nLight Weight

For footnotes refer to the last page

IRHM7250

REF: MIL-PRF-19500/603

TO-254AA

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IRHM7250, JANSR2N7269 Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units T est Conditions

BVDSS Drain-to-Source Breakdown Voltage 200 — — V VGS =0 V, ID = 1.0mA

∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.27 — V/°C Reference to 25°C, ID = 1.0mA

Voltage

RDS(on) Static Drain-to-Source — — 0.10 VGS = 12V, ID = 16A

On-State Resistance — — 0.11 ΩVGS = 12V, ID = 26A

VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA

gfs Forward Transconductance 8.0 — — S ( )V

DS > 15V, IDS = 16A 

IDSS Zero Gate Voltage Drain Current — — 25 VDS= 160V,VGS=0V

— — 250 VDS = 160V

VGS = 0V, T J = 125°C

IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V

IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V

QgTotal Gate Charge — — 170 VGS = 12V, ID = 26A

Qgs Gate-to-Source Charge — — 30 nC VDS = 100V

Qgd Gate-to-Drain (‘Miller’) Charge — — 60

td(on) Turn-On Delay Time — — 33 VDD = 100V, ID = 26A,

trRise Time — — 140 RG = 2.35Ω

td(off) Turn-Off Delay Time — — 140

tfFall Time — — 140

LS + LDTotal Inductance — 6.8 —

Ciss Input Capacitance — 4700 — VGS = 0V, VDS = 25V

Coss Output Capacitance — 850 — p F f = 1.0MHz

Crss Reverse Transfer Capacitance — 210 —

Ω



µA

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

Thermal Resistance

Parameter Min Typ Max Units T est Conditions

RthJC Junction-to-Case — — 0.83

RthCS Case-to-sink — 0.21 —

RthJA Junction-to-Ambient — — 48 Typical socket mount

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units T est Conditions

ISContinuous Source Current (Body Diode) — — 26

ISM Pulse Source Current (Body Diode) ➀— — 104

VSD Diode Forward Voltage — — 1.4 V Tj = 25°C, IS = 26A, VGS = 0V ➃

trr Reverse Recovery Time — — 820 nS Tj = 25°C, IF = 26A, di/dt ≥ 100A/µs

QRR Reverse Recovery Charge — — 12 µC VDD ≤ 25V ➃

ton Forward Turn-On Time Intrinsic tur n-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from

package)

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Pre-Irradiation IRHM7250, JANSR2N7269

T able 1. Electrical Characteristics @ Tj = 25°C, Post T otal Dose Irradiation ➄➅

Parameter 100K Rads(Si)1 600 to 1000K Rads (Si)2

Units

Test Conditions

Min Max Min Max

BVDSS Drain-to-Source Breakdown Voltage 200 — 200 — V VGS = 0V, ID = 1.0mA

VGS(th) Gate Threshold V oltage ➃ 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mA

IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V

IGSS Gate-to-Source Leakage Reverse — -100 — -100 V GS = -20 V

IDSS Zero Gate Voltage Drain Current — 25 — 50 µA VDS=160V, V GS =0V

RDS(on) Static Drain-to-Source ➃ — 0.094 — 0.149 Ω VGS = 12V, ID =16A

On-State Resistance (TO-3)

RDS(on) Static Drain-to-Source ➃ — 0.10 — 0.155 Ω VGS = 12V, ID =16A

On-State Resistance (TO-254AA)

International Rectifier Radiation Hardened MOSFETs are tested to v erify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufactur ing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part number IRHM7250 (JANSR2N7269)

2. Part numbers IRHM3250 (JANSF2N7269), IRHM4250 (JANSG2N7269) and IRHM8250 (JANSH2N7269)

Fig a. Single Event Effect, Safe Operating Area

VSD Diode Forward Voltage ➃ — 1.4 — 1.4 V VGS = 0V, IS = 26A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

100

150

200

0 -5 -10 -15 -20

VGS

VDS

T able 2. Single Event Effect Safe Operating Area

I on LET Energy Range VDS(V)

MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V

Cu 28 285 43 190 180 170 125 —

B r 36.8 305 39 100 100 100 50 —

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IRHM7250, JANSR2N7269 Pre-Irradiation

Post-Irradiation

Fig 2. Typical Response of On-State Resistance

Vs. Total Dose Exposure

Fig 1. Typical Response of Gate Threshhold

Voltage Vs. Total Dose Exposure

Fig 3. Typical Response of Transconductance

Vs. Total Dose Exposure Fig 4. Typical Response of Drain to Source

Breakdown Vs. Total Dose Exposure

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Pre-Irradiation IRHM7250, JANSR2N7269

Post-Irradiation

Fig 6. Typical On-State Resistance Vs.

Neutron Fluence Level

Fig 5. Typical Zero Gate Voltage Drain

Current Vs. Total Dose Exposure

Fig 8b. VDSS Stress Equals

80% of BVDSS During Radiation Fig 9. High Dose Rate

(Gamma Dot) Test Circuit

Fig 7. Typical Transient Response

of Rad Hard HEXFET During

1x1012 Rad (Si)/Sec Exposure

Fig 8a. Gate Stress of VGSS

Equals 12 Volts During

Radiation

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IRHM7250, JANSR2N7269 Pre-Irradiation

Post-IrradiationRadiation Characteristics

Fig 11. Typical Output Characteristics

Post-Irradiation 100K Rads (Si)

Fig 10. Typical Output Characteristics

Pre-Irradiation

Fig 12. Typical Output Characteristics

Post-Irradiation 300K Rads (Si) Fig 13. Typical Output Characteristics

Post-Irradiation 1 Mega Rads(Si)

Note: Bias Conditions during radiation: VGS = 12 Vdc , V DS = 0 Vdc

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Pre-Irradiation IRHM7250, JANSR2N7269

Radiation Characteristics

Fig 16. Typical Output Characteristics

Post-Irradiation 300K Rads (Si) Fig 17. Typical Output Characteristics

Post-Irradiation 1 Mega Rads(Si)

Fig 14. Typical Output Characteristics

Pre-Irradiation Fig 15. Typical Output Characteristics

Post-Irradiation 100K Rads (Si)

Note: Bias Conditions during r adiation: VGS = 0 Vdc , VDS = 160 Vdc

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IRHM7250, JANSR2N7269 Pre-Irradiation

Fig 21. Normalized On-Resistance

Vs. Temperature

Fig 19. Typical Output CharacteristicsFig 18. Typical Output Characteristics

Fig 20. Typical Transfer Characteristics

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Pre-Irradiation IRHM7250, JANSR2N7269

Fig 25. Maximum Safe Operating

Area

Fig 23. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 22. Typical CapacitanceVs.

Drain-to-Source Voltage

Fig 24. Typical Source-Drain Diode

Forward Voltage

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IRHM7250, JANSR2N7269 Pre-Irradiation

Fig 26a. Switching Time Test Circuit

90%

10%

GS t

d(on)

d(off)

Fig 26b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

RGD.U.T.

12V

VDD

Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 26. Maximum Drain Current Vs.

Case Temperature

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Pre-Irradiation IRHM7250, JANSR2N7269

Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

12 V

Fig 29b. Gate Charge Test Circuit

Fig 29a. Basic Gate Charge Waveform

Fig 28c. Maximum Avalanche Energy

Vs. Drain Current

Fig 28b. Unclamped Inductive Waveforms

Fig 28a. Unclamped Inductive Test Circuit

(BR)DSS

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

12V

12 www.irf.com

IRHM7250, JANSR2N7269 Pre-Irradiation

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➄ Total Dose Irradiation with VGS Bias.

12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019, condition A.

➅ Total Dose Irradiation with VDS Bias.

160 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➁ VDD = 25V, starting TJ = 25°C, L= 1.5mH

Peak IL = 26A, VGS = 12V

➂ ISD ≤ 26A, di/dt ≤ 190A/µs,

VDD ≤ 200V, TJ ≤ 150°C

Case Outline and Dimensions — T O-254AA

Foot Notes:

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them

which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that

will produce fumes containing beryllium.

3.78 ( .149 )

3.53 ( .139 )

-A-

13.84 ( .545 )

13.59 ( .535 ) 6.60 ( .260 )

6.32 ( .249 )

20.32 ( .800 )

20.07 ( .790 ) 13.84 ( .545 )

13.59 ( .535 )

-C-

1.14 ( .045 )

0.89 ( .035 ) 3.81 ( .150 )

1.27 ( .050 )

1.02 ( .040 )

-B- .12 ( .005 )

3.81 ( .150 )

1 2 3

17.40 ( .685 )

16.89 ( .665 )

31.40 ( 1.235 )

30.39 ( 1.199 )

.50 ( .020 ) M C A M B

.25 ( .010 ) M C

LEGEND

1 - COLL

2 - E M ITT

3 - G A T E

LEGEND

1- DRAIN

2- SOURCE

3- GATE

IRHM7250D

IRHM7250U

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: + + 65 (0)838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936

Data and specifications subject to change without notice. 10/00