© 2013 IXYS CORPORATION, All Rights Reserved DS99197G(10/13)
VDSS = 300V
ID25 = 52A
RDS(on)
73m
trr
200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 300 V
VDGR TJ= 25°C to 150°C, RGS = 1M300 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C 52 A
IDM TC= 25°C, Pulse Width Limited by TJM 150 A
IATC= 25°C 52 A
EAS TC= 25°C 1 J
dv/dt IS IDM, VDD VDSS,T
J 150°C 10 V/ns
PDTC= 25°C 400 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-247) 1.13/10 Nm/lb.in
FCMounting Force (PLUS220) 11..65/2.5..14.6 N/lb
Weight PLUS220 & PLUS220SMD 4 g
TO-247 6 g
IXFV52N30P
IXFV52N30PS
IXFH52N30P
PolarTM Power MOSFETs
HiPerFETTM
Features
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 300 V
VGS(th) VDS = VGS, ID = 4mA 2.5 5.0 V
IGSS VGS = 20V, VDS = 0V  100 nA
IDSS VDS = VDSS, VGS= 0V 25 A
TJ = 125C 1 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 73 m
G = Gate D = Drain
S = Source Tab = Drain
PLUS220 (IXFV)
GDS
PLUS220SMD (IXFV_S)
G
SD (Tab)
TO-247 (IXFH)
G
SD (Tab)
D
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH52N30P IXFV52N30P
IXFV52N30PS
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 20 30 S
Ciss 3490 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 550 pF
Crss 130 pF
td(on) 24 ns
tr 22 ns
td(off) 60 ns
tf 20 ns
Qg(on) 110 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 25 nC
Qgd 53 nC
RthJC 0.31 C/W
RthCS (TO-247 & PLUS220) 0.25 C/W
Source-Drain Diode Characteristic Values
TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 52 A
ISM Repetitive, pulse width limited by TJM 150 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 160 200 ns
QRM 800 nC
IRM 7 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t 300s, duty cycle, d 2%.
IF = 25A, -di/dt = 100A/s
VR = 100V, VGS = 0V
TO-247 (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
P
PLUS220 (IXFV) Outline
PLUS220SMD (IXFV_S) Outline
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 52A
RG = 4 (External) 1 = Gate
2,4 = Drain
3 = Source
1 = Gate
2,4 = Drain
3 = Source
1 = Gate
2 = Drain
3 = Source
© 2013 IXYS CORPORATION, All Rights Reserved
IXFH52N30P IXFV52N30P
IXFV52N30PS
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
0.00.51.01.52.02.53.03.54.04.55.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
5V
6V
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25º C
0
20
40
60
80
100
120
140
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
6V
5V
7V
8V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
10
20
30
40
50
012345678910
V
DS
- Volts
I
D
- Amperes
6V
5V
V
GS
= 10V
8V
7V
Fig. 4 . R
DS(on)
Normalized to I
D
= 26A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Cen tigr ade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 52A
I
D
= 26A
Fig. 5. R
DS(on)
Normalized to I
D
= 26A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 20 40 60 80 100 120 140
I
D
- Am peres
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
10
20
30
40
50
-50 -25 0 25 50 75 100 125 150
T
C
- Degr ees Cen tigr ade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH52N30P IXFV52N30P
IXFV52N30PS
Fig. 7 . Input Admitta nce
0
10
20
30
40
50
60
70
80
90
100
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
V
GS
- Volts
I
D
- Amper es
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. T ran sconductance
0
10
20
30
40
50
60
0 102030405060708090100
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
120
140
160
0.30.40.50.60.70.80.91.01.11.21.31.4
V
SD
- Volts
I
S
- Amper es
T
J
= 125ºC T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 150V
I
D
= 26A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - Pi coFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forwa rd-Bias Safe Operating Area
1
10
100
1000
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150º C
T
C
= 25ºC
Sin g l e Pul s e
100µs
1ms
R
DS(on)
Limit
25µs
DC
10ms
© 2013 IXYS CORPORATION, All Rights Reserved
IXFH52N30P IXFV52N30P
IXFV52N30PS
Fig. 13. Maximum Transient The rmal Impedance
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Pul se Width - Secon d
Z
(th)JC
- ºC / W
Fig. 13. Maximum Transient Thermal Impedance
aaaaaa
0.5
IXYS REF: T_52N30P(6S) 9-26-13
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.