. wd 4 NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 Vero Ic hyeg@ Ic/ Ver VcEjsat) PACKAGE | DEVICE (sus) (max) (min/max @ I-/Ipg Py* fr TYPE VOLTS | AMPS @ A/V) (V @ A/A) WATTS | (MHz) NPN 2N1724 80 5 20-90@15 1@2/2 50 10 TO-61 2N1724A 120 5 30-90@2/15 .6@2/.2 50 10 2N1725 80 5 50-150@2/15 | 1@2/.2 50 10 2N2811 50 10 20-60@5/5 S@5/.5 40 15 2N2812 50 10 40-120@5/5 5@5/.5 40 15 2N2813 70 10 20-60@5/5 5@5/5 40 15 2N2814 70 10 40-120@5/5 5@5/5 40 15 2N3489 100 7.5 15-45@3/5 1.2@3/.3 67 10 2N3490 60 7.5 40-120@5/5 1.5@5/.5 67 10 2N3491 80 7.5 40-120@5/5 1.5@5/.5 67 10 2N3492 100 75 30-90@5/5 1.5@5/.5 67 10 2N3597 40 20 40-120@10/2 | 1.5@20/2 100 30 2N3598 60 20 40-120@10/2 | 1.5@20/2 100 30 2N3599 80 20 40-120@10/2 | 1.5@20/2 100 30 2N4301 80 10 30-120@5/4 A@S/5 50 40 2N5389 300 7.5 25-100@2/5 2.2@7/1.4 100 15 2N5540 300 10 20-60@5/5 1@8/8 50 20 *T.=25C h Veer 9