2N6211 2N6212 2N6213 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6211, 2N6212, and 2N6213 are silicon NPN transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6211 275 225 2N6212 350 300 6.0 2.0 5.0 1.0 35 -65 to +200 5.0 ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) 2N6211 2N6212 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICEV VCE=250V, VBE=1.5V 0.5 ICEV VCE=315V, VBE=1.5V 0.5 ICEV VCE=360V, VBE=1.5V ICEV VCE=250V, VBE=1.5V, TC=100C 5.0 ICEV VCE=315V, VBE=1.5V, TC=100C 5.0 ICEV VCE=360V, VBE=1.5V, TC=100C ICEO VCE=150V 5.0 5.0 IEBO VEB=6.0V 1.0 0.5 BVCEV IC=50mA, VBE=1.5V, L=10mH 275 350 BVCER IC=50mA, RBE=50 250 325 BVCEO IC=50mA 225 300 BVEBO IE=1.0mA 6.0 BVEBO IE=0.5mA 6.0 VCE(SAT) IC=1.0A, IB=125mA 1.4 1.6 VBE(SAT) IC=1.0A, IB=125mA 1.4 1.4 hFE VCE=2.8V, IC=1.0A 10 100 hFE VCE=3.2V, IC=1.0A 10 100 hFE VCE=4.0V, IC=1.0A - 2N6213 400 350 2N6213 MIN MAX 0.5 5.0 5.0 0.5 400 375 350 6.0 2.0 1.4 10 100 UNITS V V V A A A W C C/W UNITS mA mA mA mA mA mA mA mA V V V V V V V R1 (18-June 2013) 2N6211 2N6212 2N6213 SILICON NPN POWER TRANSISTORS ELECTRICAL SYMBOL fT Cob tr ts tf Is/b CHARACTERISTICS - Continued: (TC=25C unless otherwise noted) TEST CONDITIONS MIN MAX VCE=10V, IC=200mA, f=5.0MHz 20 VCB=10V, IE=0, f=1.0MHz 220 VCC=200V, IC=1.0A, IB1=IB2=125mA 0.6 VCC=200V, IC=1.0A, IB1=IB2=100mA 2.5 VCC=200V, IC=1.0A, IB1=IB2=125mA 0.6 VCE=40V, t=1.0s 875 UNITS MHz pF s s s mA TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (18-June 2013) w w w. c e n t r a l s e m i . c o m