LESHAN RADIO COMPANY, LTD.
M13–1/6
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO – 45 Vdc
Emitter–Base V oltage V EBO – 5.0 Vdc
Collector Current — Continuous I C– 100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) PD225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 55 6 °C/W
Total Device Dissipation PD300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ , Tstg –55 to +150 °C
DEVICE MARKING
BCW69LT1 = H1; BCW70LT1 = H2,
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage (IC = –2.0 mAdc, IB = 0 ) V (BR)CEO – 45 — Vdc
Collector–Emitter Breakdown V oltage (IC = –100 µAdc, V EB = 0 ) V (BR)CES – 50 — Vdc
Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0) V (BR)EBO – 5.0 — Vdc
Collector Cutoff Current I CEO
(VCE = –20 Vdc, I E = 0 ) — – 100 nAdc
(VCE = –20 Vdc, I E = 0 , TA = 100°C) — – 10 µAdc
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1
3
2
General Purpose Transistors
PNP Silicon
BCW69LT1
BCW70LT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)