BC636TA - ON SEMICONDUCTOR - Datasheet.Technology

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BC636 — PNP Epitaxial Silicon Transistor

BC636 Rev. 1.3

October 2015

BC636

PNP Epitaxial Silicon Transistor

Features

• Switching and Amplifier Applications

• Complement to BC635

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Part Number Top Mark Package Packing Method

BC636TA BC636 TO-92 3L Ammo

Symbol Parameter Value Unit

VCER Collector-Emitter Voltage at RBE = 1 KΩ-45 V

VCES Collector-Emitter Voltage -45 V

VCEO Collector-Emitter Voltage -45 V

VEBO Emitter-Base Voltage -5 V

ICCollector Current -1 A

ICP Peak Collector Current -1.5 A

IBBase Current -100 mA

TJJunction Temperature 150 °C

TSTG Storage Temperature -65 to 150 °C

1. Emitter

123123

Straight Lead Bent Lead

TO-92

Bulk Packing Tape & Reel

Ammo Packing

2. Collector

3. Base

BC636 — PNP Epitaxial Silicon Transistor

BC636 Rev. 1.3 2

Thermal Characteristics(1)

Values are at TA = 25°C unless otherwise noted.

Note:

1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Unit

PDPower Dissipation 1 W

Derate Above 25°C8mW/°C

RθJA Thermal Resistance, Junction-to-Ambient 125 °C/W

Symbol Parameter Conditions Min. Typ. Max. Unit

BVCEO Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 -45 V

ICBO Collector Cut-Of f Curren t VCB = -30 V, IE = 0 -0.1 μA

IEBO Emitter Cut-Off Current VEB = -5 V, IC = 0 -10 μA

hFE1 DC Current Gain VCE = -2 V, IC = -5 mA 25

hFE2 VCE = -2 V, IC = -150 mA 40 250

hFE3 VCE = -2 V, IC = -500 mA 25

VCE(sat) Collector-Emitter Saturation Voltage IC = -500 mA, IB = -50 mA -0.5 V

VBE(on) Base-Emitter On Voltage VCE = -2 V, IC = -500 mA -1 V

fTCurrent Gain Bandwidth Product VCE = -5 V, IC = -10 mA,

f = 50 MHz 100 MHz

BC636 — PNP Epitaxial Silicon Transistor

BC636 Rev. 1.3 3

Typical Performance Characteristics

Figure 1. Static Characteristic Figure 2. DC Current Gain

Figure 3. Base-Emitter Saturation Voltage and

Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Figure 5. Collector Output Capacitance

-0 -10 -20 -30 -40 -50

-0

-100

-200

-300

-400

-500

IB = - 0.2 mA

IB = - 0.4 mA

IB = - 0.6 mA

IB = - 0.8 mA

IB = - 1.0 mA

IB = - 1.2 mA

IB = - 1.4 mA

IB = - 1.6 mA

IB = - 1.8 mA

IC[mA], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

-1 -10 -100 -1000

100

1000

VCE = - 2V

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

-1 -10 -100 -1000

-0.01

-0.1

-1

-10

IC = 10 IB

VCE(sat)

VBE(sat)

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

IC[mA], COLLECTOR CURRENT

-0.2 -0.4 -0.6 -0.8 -1.0 -1.2

-1

-10

-100

-1000

VCE = - 2V

IC[mA], COLLECTOR CURRENT

VBE[V], BASE-EMITTER VOLTAGE

-1 -10 -100

100

f=1MHz

Cob[pF], CAPACITANCE

VCB[V], COLLECTOR-BASE VOLTAGE

BC636 — PNP Epitaxial Silicon Transistor

BC636 Rev. 1.3 4

Physical Dimensions

Figure 6. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo Type

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Rev. I77

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