Si8751/52 Data Sheet Isolated FET Driver with Pin Control or Diode Emulator Inputs KEY FEATURES The Si875x enables new pathways to the creation of custom Solid State Relay (SSR) configurations. The Si875x integrates robust isolation technology with an SSR FET driver. A floating secondary side dc power supply is unnecessary as the product generates its own self-contained gate drive output voltage. When combined with a customer-selected external FET, a complete Solid State Relay is formed, allowing customers to optimize their system for cost, PCB area, power, On-Resistance, and thermal performance. Customers have a choice of digital input control (Si8751) or diode emulation control (Si8752) to best suit their application. The Si875x integrates versatile outputs that support driving AC or DC load configurations. The Si875x eliminates the need for bulky mechanical relays which can be difficult to assemble onto PCBs and add switching noise to the system. Traditional SSRs integrate optocoupler-style LED inputs, which limit the operating temperature range of the solution. The Si875x experiences no such limitation and can support full industrial and automotive temperature ranges with increased stability and longer life. The Si875x drives FET gates with a nominal 10 V using as little as 1 mA input current. Increasing the input current to 10 mA enables turn-on times as fast as 94 s. Input side voltages on the Si8751 are flexible from 2.25 V to 5.5 V supporting seamless connection to low-power controllers. The Si875x devices provide an Active Miller Clamp to prevent the unintended turn-on of the external FET when a high dV/dt is present on the FET's drain. The Si875x is qualified to the AEC-Q100 standard, making it suitable for automotive applications. Further, its 2.5 KVrms isolation rating forms the basis for full certification to UL, CSA, VDE, and CQC. Applications include mechanical relay, photo switch, or SSR replacement in motor control, valve control, HVAC relay, automotive, charging, battery monitoring, ac mains line switching, and more. The Si8751 and Si8752 come in ROHS-compliant SOIC-8 packaging, providing a compact, industry-standard footprint and generous margin to creepage and clearance requirements. silabs.com | Building a more connected world. * Drives user-selected external FETs * Choice of digital input control (Si8751) or diode emulation control (Si8752) * Internally generated secondary side power supply * 10 V output with 1 mA input current * As fast as 82 s turn-on time and 46 us turn-off time * Active Miller Clamp to prevent unintended turn-on and reduce inductive chatter * Supports AC or DC load switching * 2.5 KVrms isolation rating * UL, CSA, VDE, and CQC certifications * AEC-Q100 qualified * Industrial -40 to 105 C or Automotive -40 to 125 C temperature ranges * ROHS-compliant SOIC-8 Package APPLICATIONS * Motor Controls * Valve Controls * HVAC Relays * HEV/EV Automotive Charging * Battery Monitoring * AC Mains Line Switching Rev. 1.0 Si8751/52 Data Sheet Ordering Guide 1. Ordering Guide Table 1.1. Si8751/2 Ordering Guide Input Support Package Temperature Range (Ambient) Isolation Rating (kVrms) Si8751AB-IS Digital CMOS SOIC-8 -40 to 105 C Industrial 2.5 kV Si8751AB-AS Digital CMOS SOIC-8 -40 to 125 C Automotive 2.5 kV Si8752AB-IS Diode Emulation SOIC-8 -40 to 105 C Industrial 2.5 kV Si8752AB-AS Diode Emulation SOIC-8 -40 to 125 C Automotive 2.5 kV Ordering Part Number1, 2 Note: 1. "Si" and "SI" are used interchangeably. 2. Add an "R" at the end of the device to denote tape and reel option silabs.com | Building a more connected world. Rev. 1.0 | 2 Si8751/52 Data Sheet System Overview 2. System Overview IN Receiver TT MCAP1 CMOS Isolation Signal & Power Transmitter VDD GATE SOURCE GND MCAP2 Figure 2.1. Si8751 Block Diagram ANODE CATHODE Receiver CMOS Isolation e Signal & Power Transmitter MCAP1 GATE SOURCE MCAP2 Figure 2.2. Si8752 Block Diagram silabs.com | Building a more connected world. Rev. 1.0 | 3 Si8751/52 Data Sheet System Overview The operation of an Si875x channel is analogous to that of an optocoupler and gate driver, except an RF carrier is modulated instead of light. This simple architecture provides a robust isolated data path and requires no special considerations or initialization at start-up. A simplified block diagram for a single Si875x channel is shown in the figure below. Transmitter A Receiver SemiconductorBased Isolation Barrier MODULATOR B DEMODULATOR RF OSCILLATOR Figure 2.3. Simplified Channel Diagram A channel consists of an RF Transmitter and RF Receiver separated by a semiconductor-based isolation barrier. Referring to the Transmitter, input A modulates the carrier provided by an RF oscillator using on/off keying. The Receiver contains a demodulator that decodes the input state according to its RF energy content and applies the result to output B via the output driver. This RF on/off keying scheme is superior to pulse code schemes as it provides best-in-class noise immunity, low power consumption, and better immunity to magnetic fields. See figure below for more details. Input Signal Modulation Signal Output Signal Figure 2.4. Modulation Scheme 2.1 Device Behavior The following are truth tables for the Si875x family. Table 2.1. Si8751 Truth Table VDD IN Gate Powered H H Powered L L Unpowered X L Table 2.2. Si8752 Truth Table Input Current Gate > If(TH) H < If(TH) L silabs.com | Building a more connected world. Rev. 1.0 | 4 Si8751/52 Data Sheet System Overview 2.2 Power Supply Connections (Si8751 Only) The Si8751 requires a 0.1 F bypass capacitor between VDD and GND. The capacitor should be placed as close as possible to the package. To enhance the robustness of a design, the user may also include a 1 f capacitor for bulk decoupling as well as a resistor (50-300 ) in series with the input if the system is excessively noisy. 2.3 TT Pin Description (Si8751 Only) The Si8751 provides a pin to control how much current is consumed by the supply when the input pin is logic high. The more current consumed by the input supply, the faster the output can turn on the external FET. This allows the application designer to optimize the tradeoff between power consumption and switching time. Typically, this pin is connected to the supply ground through a resistor. The greater the value of the resistor, the less current is consumed by the input supply. Values can range from 0 (shorted to ground) to open (TT not connected). IN IN MCAP1 Receiver TT CMOS Isolation VDD Signal & Power Transmitter In addition to a resistor, a capacitor, typically 0.1 f, can be placed in parallel to the resistor. This allows the device to draw more current to switch the external FET on quickly yet draw less supply current in the steady state. Total power over time is reduced while maintaining fast switching of the FET. GATE Max Drive Current Static Drive Current ~1/C SOURCE GND MCAP2 t Figure 2.5. Si8751 TT Example Figure 2.6. Drive Current vs. Time Using TT with Capacitor 2.4 LED Emulator Input (Si8752 Only) Figure 2.8. Diode Emulator Model and I-V Curve The Si8752 uses input current to achieve the development of power across the isolation barrier. Therefore, the more current provided to the input, the more power is developed on the isolated side of the device. This translates into a faster turn on time of the external FET. This benefit is limited to an input current of about 15 mA. Beyond that, increasing the input current has little effect on the switching time of the external FET. silabs.com | Building a more connected world. Rev. 1.0 | 5 Si8751/52 Data Sheet System Overview 2.5 Output Description The output of the Si875x device develops a positive voltage on the GATE pin with respect to the SOURCE pin. This voltage is used to turn on a typical field effect transistor (FET). Because power is transmitted across the isolation barrier, no isolated supply is required. This can be used to drive a FET configured as a switch for a dc load. It can also be used to drive a pair of FETs configured as a switch for an ac load. See 3. Applications. 2.6 Miller Clamp 2.6.1 Miller Clamp Description The Si875x devices provide a clamping device to prevent unintended turn on of the external FET when a high dV/dt is present on the FET's drain. To use this feature, a capacitor is connected between the drain(s) of the FET(s) and one of the MCAPx inputs. A sudden, positive slope on this pin will cause the clamp device within the Si875x to activate and provide a low impedance path between the gate and source pins. This will prevent the FET from being unintentionally turned on. The Si875x device provides two miller clamp input pins. This allows for both FET's to be protected from unintended turn on when the device is used in an AC switch configuration. In this case each drain is connected to an MCAPx input through a capacitor. Connection to a MCAPx pin, and use of the Miller Clamp feature, is optional. The device will function as expected if these pins are left unconnected. 2.6.2 Sizing Miller Clamp Capacitors The recommended value of the capacitor used to connect the drain of the external FET to the Si875x device is typically 10 pf. If the application has a very large dV/dt and the clamp is not adequately keeping the external FET off, then this capacitor value can be increased up to 100 pf. The voltage rating of the capacitor should be greater than or equal to the peak voltage expected at the drain of the FET. The relationship of the capacitor and the dV/dt is governed by the equation: C = IMC/(dV/dt); where: IMC is the Miller Clamp input current (6mA max, as specified in Electrical Tables), and dV/dt is the expected slew rate. silabs.com | Building a more connected world. Rev. 1.0 | 6 Si8751/52 Data Sheet Applications 3. Applications The following examples illustrate typical circuit configurations using the Si8751/52. 3.1 DC SSR Example The Si875x device can be used to control a dc load as shown in the following figure: Receiver IN MCAP1 CMOS Isolation TT VDC Signal & Power Transmitter VDD GATE SOURCE GND MCAP2 DC Load Figure 3.1. Driving an FET for DC Load Including Miller Clamp Capacitor In this configuration, the Si8751 charges the gate of the external FET; turning it on. This switches on power, supplied by VDC, to the load. The output side circuitry is identical if using the Si8752. 3.2 AC SSR Example IN MCAP1 Receiver TT AC Load CMOS Isolation VDD Signal & Power Transmitter The Si875x can be used to control power to an ac load using the following circuit: AC Supply GATE SOURCE GND MCAP2 Figure 3.2. Driving FETs for AC Load Switching In this configuration, both FET's are turned on by the charge delivered by the Si8751. This allows ac current to flow to the load. When the Si875x is turned off, charge is drained form the gates of both FET's and the ac current is turned off. The output side circuitry is identical if using the Si8752. silabs.com | Building a more connected world. Rev. 1.0 | 7 Si8751/52 Data Sheet Electrical Specifications 4. Electrical Specifications Table 4.1. Electrical Specifications * Automotive: VDD=2.25 to 5.5V; GND=0V; TA=-40 to +125C; typical specs at 25C; TJ=-40 to +150C * Industrial: VDD=2.25 to 5.5V; GND=0V; TA=-40 to +105C; typical specs at 25C; TJ=-40 to +150C Parameter Symbol Test Condition Min Typ Max Unit 2.25 3.3 5.5 V IN = 0V -- 140 -- nA IN = VDD, TT = GND -- 13.8 17 mA IN = VDD, TT = 10 k -- 7.8 9.5 mA IN = VDD, TT unconnected -- 1.5 1.8 mA Si8751 Only Input Side Supply Voltage VDD Supply Current IDD High Level Input Voltage VIH 50% of VDD -- -- V Low Level Input Voltage VIL -- -- 25% of VDD V Input Hystersis VHYS -- 180 -- mV Driver Side GATE Off Voltage VG(OFF) IN = 0 V -- 0 -- mV GATE On Voltage VG(ON) IN = VDD, TT = GND 7.5 10 13 V IN = VDD, TT = 10 k 9 10.8 13 V IN = VDD, TT unconnected 9 10.8 13 V IN = VDD, TT = GND -- 162 330 k IN = VDD, TT = 10 k -- 265 370 k IN = VDD, TT unconnected -- 1.5 1.85 M GATE On Impedance RG Turn-off Time TG(OFF) IN = 0 V -- 15 35 s Turn-on Time (50% of VG(ON)) TG(ON) TT = GND -- 42 120 s TT = 10 k -- 58 170 s TT unconnected -- 286 650 s TT = GND -- 85.3 190 s TT = 10 k -- 130 260 s TT unconnected -- 0.7 1.2 ms Turn-on Time (90% of VG(ON)) TG(ON) Si8752 Only Input Side Input Current IF(ON) 1.0 -- 30.0 mA Guaranteed Off Current IF(OFF) -- -- 10 A Forward Voltage (OFF) VF(OFF) -- 0 -- V silabs.com | Building a more connected world. Measured ANODE with respect to Cathode Rev. 1.0 | 8 Si8751/52 Data Sheet Electrical Specifications Parameter Symbol Test Condition Min Typ Max Unit Forward Voltage (ON) VF(ON) 1 mA < IF < 10 mA, measured ANODE with respect to cathode 1.8 -- 2.35 V 10 mA < IF < 30 mA, measured ANODE with respect to cathode 2.03 -- 2.7 V Driver Side GATE Off Voltage VG(OFF) IF = 0 mA -- 0 -- mV GATE On Voltage VG(ON) IF = 1 mA 8 10.3 13 V IF = 10 mA 8 10.3 13 V IF = 30 mA 8 10.9 13 V IF = 1 mA -- 2.7 3.5 M IF = 10 mA -- 194 300 k IF = 30 mA -- 168 290 k GATE On Impedance RG Turn-off Time TG(OFF) IF = 0 mA -- 15 35 s Turn-on Time (50% of VG(ON)) TG(ON) IF = 1 mA -- 463 720 s IF = 10 mA -- 41 125 s IF = 30 mA -- 36 90 s IF = 1 mA -- 1.1 1.49 ms IF = 10 mA -- 94 190 s IF = 30 mA -- 82 180 s Turn-on Time (90% of VG(ON)) TG(ON) Si8751 and Si8752 Miller Clamp Current IMC Max input current -- -- 6 mA Miller Clamp Pull-Down Current IG IMC = 50 A; VGate = 1 V 5 12.8 -- mA IF = 0 mA (Si8752) -- 21.5 -- M 20 -- -- kV/s Gate OFF Impedance IN = 0 V (Si8751) Common Mode Transient Immunity VCM = 1500 V Note: 1. All measurements use 100 pF gate capacitance load unless specified. silabs.com | Building a more connected world. Rev. 1.0 | 9 Si8751/52 Data Sheet Electrical Specifications 4.1 Test Circuits The following figure depicts a common-mode transient immunity test circuit: Si8751 VDD IN TT GND Isolated + Supply - GATE MCAP1 MCAP2 SOURCE Isolated Ground High-Voltage Surge Generator Oscilloscope High-Voltage Differential Probe Figure 4.1. Common-Mode Transient Immunity Test Circuit 4.2 Regulatory Information Table 4.2. Regulatory Information1,2 CSA The Si875x is certified under CSA Component Acceptance Notice 5A. For more details, see Master Contract Number 232873. 60950-1: Up to 125 VRMS reinforced insulation working voltage; up to 600 VRMS basic insulation working voltage. VDE The Si875x is certified according to VDE 0884-10. For more details, see Certificate 40018443. VDE 0884-10: Up to 630 Vpeak for basic insulation working voltage. UL The Si875x is certified under UL1577 component recognition program. For more details, see File E257455. Rated up to 2500 VRMS isolation voltage for basic protection. CQC The Si875x is certified under GB4943.1-2011. For more details, see Certificate CQC17001177960. Rated up to 125 VRMS reinforced insulation working voltage; up to 600 VRMS basic insulation working voltage. 1. Regulatory Certifications apply to 2.5 kVRMS rated devices which are production tested to 3.0 kVRMS for 1 sec. 2. For more information, see 1. Ordering Guide. silabs.com | Building a more connected world. Rev. 1.0 | 10 Si8751/52 Data Sheet Electrical Specifications Table 4.3. Insulation and Safety-Related Specifications Parameter Nominal External Air Gap Symbol Test Condition SOIC-8 Value Unit CLR 4.7 mm CPG 3.9 mm DTI 0.008 mm 600 V (Clearance) Nominal External Tracking (Creepage) Minimum Internal Gap (Internal Clearance) Tracking Resistance PTI IEC60112 Erosion Depth ED 0.04 mm Resistance RIO 1012 0.5 pF 3.0 pF (Input-Output)1 Capacitance CIO f = 1 MHz (Input-Output)1 Input Capacitance2 CI Notes: 1. To determine resistance and capacitance, the Si875x is converted into a 2-terminal device. All pins on side 1 are shorted to create terminal 1, and all pins on side 2 are shorted to create terminal 2. The parameters are then measured between these two terminals. 2. Measured from input pin to ground. Table 4.4. IEC 60664-1 Ratings Parameter Test Condition SOIC-8 Specification Basic Isolation Group Material Group I Installation Classification Rated Mains Voltages < 150 VRMS I-IV Rated Mains Voltages < 300 VRMS I-III Rated Mains Voltages < 400 VRMS I-II Rated Mains Voltages < 600 VRMS I-II silabs.com | Building a more connected world. Rev. 1.0 | 11 Si8751/52 Data Sheet Electrical Specifications Table 4.5. VDE 0884 Insulation Characteristics1 Parameter Symbol Maximum Working Insulation Voltage Test Condition Characteristic Unit 630 V peak VIORM Input to Output Test Voltage VPR Method b1 (VIORM x 1.875 = VPR, 100% Production Test, tm = 1 sec, Partial Discharge < 5 pC) 1181 V peak Transient Overvoltage VIOTM t = 60 sec 4000 V peak Surge Voltage VIOSM Tested per IEC 60065 with surge voltage of 1.2 s/50 s 3077 Vpeak Si875x tested with 4000 V Pollution Degree 2 (DIN VDE 0110, Table 1) Insulation Resistance at RS >109 TS, VIO = 500 V Note: 1. Maintenance of the safety data is ensured by protective circuits. The Si875x provides a climate classification of 40/125/21. Table 4.6. IEC Safety Limiting Values1 Parameter Symbol Safety Temperature TS Safety Input Current (Si8751) S Test Condition JA = 110 C/W SOIC-8 Unit 150 C 206 mA 313 mA 413 mA 454 mA VDD = 5.5 V, TJ = 150 C, TA = 25 C JA = 110 C/W VDD = 3.63 V, TJ = 150 C, TA = 25 C JA = 110 C/W VDD = 2.75 V, TJ = 150 C, TA = 25 C Safety Input Current (Si8752) S JA = 110 C/W VF = 2.5 V, TJ = 150 C, TA = 25 C silabs.com | Building a more connected world. Rev. 1.0 | 12 Si8751/52 Data Sheet Electrical Specifications Parameter Safety Input Power (Si8752) Symbol Test Condition SOIC-8 Unit PS JA = 110 C/W 1136 mW 1 W VF = 2.5 V, TJ = 150 C, TA = 25 C Device Power Dissipation PD Note: 1. Maximum value allowed in the event of a failure. Refer to the thermal derating curves below. silabs.com | Building a more connected world. Rev. 1.0 | 13 Si8751/52 Data Sheet Electrical Specifications Table 4.7. Thermal Characteristics Parameter Symbol SOIC-8 Unit IC Junction-to-Air Thermal Resistance JA 110 C/W Figure 4.2. Thermal Derating Curve for Safety Limiting Current (Si8751) Figure 4.3. Thermal Derating Curve for Safety Limiting Current (Si8752) silabs.com | Building a more connected world. Rev. 1.0 | 14 Si8751/52 Data Sheet Electrical Specifications Table 4.8. Absolute Maximum Ratings1 Parameter Symbol Min Max Units TSTG -65 +150 C Operating Temperature TA -40 +125 C Junction Temperature TJ -- +150 C Input-side supply voltage (Si8751) VDD -0.6 6.0 V Voltage on any input side pin with respect to ground (pin 4, Si8751 only) VIO -0.5 VDD + 0.5 V IF(AVG) -- 30 mA VR -- 0.3 V Lead Solder Temperature (10 s) -- 260 C ESD Rating, HBM -- 3500 V ESD Rating, CDM -- 2000 V Maximum Isolation Voltage (Input to Output) (1 sec) -- 3000 VRMS -- 400 kV/s Storage Temperature Average Forward Anode Current (Si8752) Reverse Anode Voltage (Si8752) SOIC-8 Latch-up Immunity Note: 1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be restricted to the conditions specified in the operational sections of this data sheet. silabs.com | Building a more connected world. Rev. 1.0 | 15 Si8751/52 Data Sheet Electrical Specifications 4.3 Typical Operating Characteristics Figure 4.4. Si8751 Typical Gate Voltage vs. Temperature and TT Figure 4.5. Si8752 Typical Gate Voltage vs. Temperature and Anode Current Figure 4.6. Si8751 Typical Turn-On Time vs. Temperature and TT with 100 pF Load (50% of Output) Figure 4.7. Si8752 Typical Turn-On Time vs. Temperature and Anode Current with 100 pF Load (50% of Output) silabs.com | Building a more connected world. Rev. 1.0 | 16 Si8751/52 Data Sheet Electrical Specifications Figure 4.8. Si8751 Typical Turn-On Time vs. Temperature and TT with 100 pF Load (90% of Output) Figure 4.9. Si8752 Typical Turn-On Time vs. Temperature and Anode Current with 100 pF Load (90% of Output) Figure 4.10. Si8751 Typical Turn-On Time vs. Capacitance and TT (50% of Output) Figure 4.11. Si8752 Typical Turn-On Time vs. Capacitance and Anode Current (50% of Output) silabs.com | Building a more connected world. Rev. 1.0 | 17 Si8751/52 Data Sheet Electrical Specifications Figure 4.12. Si8751 Typical Turn-On Time vs. Capacitance and TT (90% of Output) silabs.com | Building a more connected world. Figure 4.13. Si8752 Typical Turn-On Time vs. Capacitance and Anode Current (90% of Output) Rev. 1.0 | 18 Si8751/52 Data Sheet Pin Descriptions 5. Pin Descriptions 5.1 Si8751 Pin Descriptions 8 GATE VDD 1 TT 2 IN 3 Si8751 7 MCAP1 6 MCAP2 5 SOURCE GND 4 Figure 5.1. Pin Assignments Si8751 Table 5.1. Si8751 Pin Descriptions Pin Name 1 VDD 2 TT Turn-on time control (optional) 3 IN Digital control input 4 GND 5 SOURCE 6 MCAP2 Miller capacitance control 2 (optional) 7 MCAP1 Miller capacitance control 1 (optional) 8 GATE silabs.com | Building a more connected world. Description Input side power supply Input side ground Connection to switch FET Source Connection to switch FET Gate Rev. 1.0 | 19 Si8751/52 Data Sheet Pin Descriptions 5.2 Si8752 Pin Descriptions 8 GATE NC 1 ANODE 2 NC 3 7 MCAP1 Si8752 CATHODE 4 6 MCAP2 5 SOURCE Figure 5.2. Pin Assignments Si8752 Table 5.2. Si8752 Pin Descriptions Pin Name 1 NC 2 ANODE 3 NC 4 CATHODE 5 SOURCE 6 MCAP2 Miller capacitance control 2 (optional) 7 MCAP1 Miller capacitance control 1 (optional) 8 GATE silabs.com | Building a more connected world. Description No Connect Anode of LED emulator No Connect Cathode of LED emulator Connection to switch FET Source Connection to switch FET Gate Rev. 1.0 | 20 Si8751/52 Data Sheet Package Outlines 6. Package Outlines 6.1 Package Outline: 8-Pin Narrow Body SOIC The figure below illustrates the package details for the Si875x in an 8-pin narrow-body SOIC package. The table below lists the values for the dimensions shown in the illustration. Figure 6.1. 8-Pin Narrow Body SOIC Package silabs.com | Building a more connected world. Rev. 1.0 | 21 Si8751/52 Data Sheet Package Outlines Table 6.1. 8-Pin Narrow Body SOIC Package Diagram Dimensions Symbol Millimeters Min Max A 1.35 1.75 A1 0.10 0.25 A2 1.40 REF 1.55 REF B 0.33 0.51 C 0.19 0.25 D 4.80 5.00 E 3.80 4.00 e 1.27 BSC H 5.80 6.20 h 0.25 0.50 L 0.40 1.27 0 8 silabs.com | Building a more connected world. Rev. 1.0 | 22 Si8751/52 Data Sheet Land Patterns 7. Land Patterns 7.1 Land Pattern: 8-Pin Narrow Body SOIC The figure below illustrates the recommended land pattern details for the Si875x in an 8-pin narrow-body SOIC. The table below lists the values for the dimensions shown in the illustration. Figure 7.1. 8-Pin Narrow Body SOIC Land Pattern Table 7.1. 8-Pin Narrow Body SOIC Land Pattern Dimensions Dimension Feature (mm) C1 Pad Column Spacing 5.40 E Pad Row Pitch 1.27 X1 Pad Width 0.60 Y1 Pad Length 1.55 Notes: 1. This Land Pattern Design is based on IPC-7351 pattern SOIC127P600X173-8N for Density Level B (Median Land Protrusion). 2. All feature sizes shown are at Maximum Material Condition (MMC) and a card fabrication tolerance of 0.05 mm is assumed. silabs.com | Building a more connected world. Rev. 1.0 | 23 Si8751/52 Data Sheet Top Markings 8. Top Markings 8.1 8-Pin Narrow Body SOIC Table 8.1. Top Marking Explanation Line 1 Marking: Customer Part Number Si875 = ISOdriver product series X: 1 = Digital input, 2 = LED emulator input A: Reserved V: B = 2.5 kV isolation rating Line 2 Marking: TTTTTT = Mfg code Manufacturing Code from Assembly Purchase Order form. Line 3 Marking: YY = Year Assigned by the Assembly House. Corresponds to the year and workweek of the mold date. WW = Work week silabs.com | Building a more connected world. Rev. 1.0 | 24 Si8751/52 Data Sheet Revision History 9. Revision History Revision 1.0, December 2017 * Significant edits with production electrical specifications and load switching diagram. Revision 0.5, September 2016 * Significant edits with production electrical specifications. Revision 0.1, May 2016 * Initial revision. silabs.com | Building a more connected world. Rev. 1.0 | 25 Table of Contents 1. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2. System Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Device Behavior . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Power Supply Connections (Si8751 Only) . . . . . . . . . . . . . . . . . . . . 5 2.3 TT Pin Description (Si8751 Only) . . . . . . . . . . . . . . . . . . . . . . . 5 2.4 LED Emulator Input (Si8752 Only) . . . . . . . . . . . . . . . . . . . . . . . 5 2.5 Output Description . . . . . . . . . . . . . . . . . . . . . . . 6 2.6 Miller Clamp . . . . . . . . . 2.6.1 Miller Clamp Description . . . 2.6.2 Sizing Miller Clamp Capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 . 6 . 6 . . . . . . . . . . 3. Applications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.1 DC SSR Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.2 AC SSR Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.1 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4.2 Regulatory Information . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4.3 Typical Operating Characteristics . . . . . . . . . . . . . . . . . . . . . . .16 5. Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.1 Si8751 Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . .19 5.2 Si8752 Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . .20 6. Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6.1 Package Outline: 8-Pin Narrow Body SOIC . . .21 7. Land Patterns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 7.1 Land Pattern: 8-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 . . . 8. Top Markings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 . . . . 8.1 8-Pin Narrow Body SOIC . . . . . . . .24 9. Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Table of Contents 26 Smart. Connected. Energy-Friendly. Products Quality www.silabs.com/products www.silabs.com/quality Support and Community community.silabs.com Disclaimer Silicon Labs intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software implementers using or intending to use the Silicon Labs products. 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