7MBR20SC060 IGBT Modules PIM/Built-in converter with thyristor and brake (S series) 600V / 20A / PIM Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit Applications * Inverter for Motor Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Converter Thyristor Brake Inverter Item Symbol Collector-Emitter voltage Gate-Emitter voltage Condition VCES Collector current Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Continuous 1ms o c e r t Junction temperature (except Thyristor) Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque 600 20 20 40 20 69 600 20 20 40 69 600 800 800 20 225 125 800 20 140 98 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 ew n for 1 device Continuous 1ms 1 device 50Hz/60Hz sine wave Tj=125C, 10ms half sine wave 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 1.3 to 1.7 N*m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base. http://store.iiic.cc/ Unit n. g i s de nd e mm Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) No VGES IC ICP -IC PC VCES VGES IC ICP PC V RRM V DRM V RRM IT(AV) ITSM Tjw V RRM IO IFSM I2t Tj Tstg Viso Rating V V A A A W V V A A W V V V A A C V A A A 2s C C V V N*m 7MBR20SC060 IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Symbol Condition Characteristics Typ. Max. 50 200 5.5 7.8 8.5 1.8 1.95 2.4 2000 Unit Inverter Min. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Turn-on time Cies ton tr toff tf VF Turn-off Brake Forward on voltage Thyristor Converter Symbol Condition Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage trr ICES IGES VCE(sat) Turn-on time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage ton tr toff tf IRRM IDM IRRM IGT V GT V TM Forward on voltage V FM Turn-off time Thermistor B VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=20mA VGE=15V, Ic=20A chip terminal VGE=0V, VCE=10V, f=1MHz V CC =300V IC=20A VGE=15V RG=120 IF=20A chip terminal IF=20A VCES=600V, VGE=0V VCE=0V, VGE=20V IC=20A, VGE=15V chip terminal V CC =300V IC=20A VGE=15V RG=120 V R=600V V DM=800V V RM=800V VD=6V, IT=1A VD=6V, IT=1A ITM=20A chip terminal IF=20A chip terminal V R=800V T=25C T=100C T=25/50C for nd e mm B value t No 1.8 1.95 0.45 0.25 0.40 0.05 de IRRM R Reverse current Resistance 0.45 0.25 0.40 0.05 1.8 1.95 o c e r w ne 465 3305 1.2 0.6 1.0 0.35 5000 495 3375 pF s V 2.6 300 50 200 2.4 1.2 0.6 1.0 0.35 50 1.0 1.0 100 2.5 1.55 . n sig 1.2 1.3 1.1 1.2 A nA V V ns A nA V s A mA mA mA V V V 1.5 50 520 3450 A K Thermal resistance Characteristics Item Thermal resistance ( 1 device ) Contact thermal resistance * Min. Rth(j-c) Rth(c-f) Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound * This is the value which is defined mounting on the additional cooling fin with thermal compound http://store.iiic.cc/ Characteristics Typ. Max. Unit 1.81 3.81 1.81 1.66 2.00 0.05 C/W 7MBR20SC060 IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.) 50 VGE= 20V 15V 50 VGE= 20V 12V 12V 15V 40 Collector current : Ic [ A ] 40 30 20 10 30 20 10 10V 10V 0 0 0 1 2 3 4 5 0 3 5 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.) 10 Tj= 25C Collector - Emitter voltage : VCE [ V ] Tj= 125C 30 8 mm 10 0 1 2 t No 4 n sig d en eco 3 r . de 6 ew n for 20 0 4 [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 40 Ic= 40A 2 Ic= 20A Ic= 10A 0 4 5 10 Collector - Emitter voltage : VCE [ V ] 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=20A, Tj= 25C [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 5000 Cies Collector - Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ pF ] 2 Collector - Emitter voltage : VCE [ V ] 50 Collector current : Ic [ A ] 1 Collector - Emitter voltage : VCE [ V ] 1000 Coes Cres 500 25 400 20 300 15 200 10 100 5 100 50 0 0 5 10 15 20 25 30 35 0 20 40 60 80 Gate charge : Qg [ nC ] Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 100 0 120 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.) 7MBR20SC060 IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=120, Tj= 125C [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=120, Tj= 25C 1000 1000 ton toff Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] ton toff tr 100 tf tr 100 10 tf 10 0 10 20 30 40 0 10 Collector current : Ic [ A ] 20 30 40 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=20A, VGE=15V, Tj= 25C [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=120 2.0 5000 tf 100 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 1000 Eon(125C) for e m m 10 50 100 t No o c e r Eoff(125C) . de 1.5 1.0 nd n sig w ne Eon(25C) Eoff(25C) 0.5 Err(125C) Err(25C) 0.0 1000 0 10 Gate resistance : Rg [ ] 20 30 40 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=20A, VGE=15V, Tj= 125C [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=120, Tj<=125C 4 250 Eon 200 3 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] ton toff tr 2 Eoff 150 SCSOA (non-repetitive pulse) 100 1 50 RBSOA (Repetitive pulse) Err 0 0 50 100 1000 Gate resistance : Rg [ ] 0 200 400 600 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 800 IGBT Module 7MBR20SC060 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=120 [ Inverter ] Forward current vs. Forward on voltage (typ.) 50 300 trr(125C) 100 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] Tj=25C Tj=125C 40 30 20 10 0 trr(25C) Irr(125C) Irr(25C) 10 1 0 1 2 3 0 10 Forward on voltage : VF [ V ] 50 40 50 Tj= 25C Instantaneous on-state current [ A ] 30 0.4 0.8 de t No 10 nd e mm o c e r 1.2 1.6 5 2 0.0 2.0 . n sig ew n for 20 10 Tjw= 25C Tjw= 125C Tj= 125C 40 Forward current : IF [ A ] 30 [ Thyristor ] On-state current vs. On-state voltage (typ.) [ Converter ] Forward current vs. Forward on voltage (typ.) 0 0.0 20 Forward current : IF [ A ] 0.4 Forward on voltage : VFM [ V ] 0.8 1.2 1.6 2.0 Instantaneous on-state voltage [ V ] [ Thermistor ] Temperature characteristic (typ.) Transient thermal resistance 200 10 100 Conv. Diode IGBT[Inverter&DB] Resistance : R [ k ] Thermal resistanse : Rth(j-c) [ C/W ] FWD[Inverter] Thyristor 1 10 1 0.1 0.05 0.001 0.01 0.1 1 0.1 -60 Pulse width : Pw [ sec ] -40 -20 0 20 40 60 80 100 Temperature [ C ] http://store.iiic.cc/ 120 140 160 180 7MBR20SC060 IGBT Module [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.) [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.) 50 VGE= 20V 15V 50 VGE= 20V 12V 12V 15V 40 Collector current : Ic [ A ] 30 20 30 20 10 10 10V 10V 0 0 0 1 2 3 4 5 0 3 4 5 [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.) 10 Tj= 25C 30 Collector - Emitter voltage : VCE [ V ] Tj= 125C 40 8 mm 0 0 1 2 t No eco 3 r 4 d en . de 6 n sig ew n for 20 10 Ic= 40A 2 Ic= 20A Ic= 10A 0 4 5 10 Collector - Emitter voltage : VCE [ V ] 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=20A, Tj= 25C [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C Collector - Emitter voltage : VCE [ V ] 5000 Capacitance : Cies, Coes, Cres [ pF ] 2 Collector - Emitter voltage : VCE [ V ] 50 Collector current : Ic [ A ] 1 Collector - Emitter voltage : VCE [ V ] Cies 1000 Coes Cres 100 50 500 25 400 20 300 15 200 10 100 5 0 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 20 40 60 80 Gate charge : Qg [ nC ] http://store.iiic.cc/ 100 0 120 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 40 IGBT Module 7MBR20SC060 Outline Drawings, mm . de ew n for Marking : White mm t No n sig d en o c e r Marking : White Equivalent Circuit Schematic [ Converter ] [ Thyristor ] 21 (P) 26 [ Brake ] [ Inverter ] [ Thermistor ] 22(P1) 8 20 (Gu) 25 1(R) 2(S) 3(T) 19(Eu) 7(B) 14(Gb) 23(N) 18 (Gv ) 16 (Gw) 17(Ev ) 4(U) 15(Ew) 5(V) 13(Gx) 24(N1) 12(Gy ) 6(W) 11(Gz) 10(En) http://store.iiic.cc/ 9