PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 60 Volt VCEO
* 1 Amp continuous current
*P
tot= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX550 ZTX551 UNIT
Collector-Base Voltage VCBO -60 -80 V
Collector-Emitter Voltage VCEO -45 -60 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -2 A
Continuous Collector Current IC-1 A
Power Dissipation: at Tamb
=25°C
derate above 25°C
Ptot 1
5.7
W
mW/ °C
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL ZTX550 ZTX551 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO -60 -80 V IC=-100µA
Collector-Emitter
Sustaining Voltage
VCEO(sus) -45 -60 V IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5 -5 V IE=-100µA
Collector Cut-Off
Current
ICBO -0.1
-0.1 µA
µA
VCB
=-45V
VCB
=-60V
Emitter Cut-Off
Current
IEBO -0.1 -0.1 µAVEB
=-4V
Collector-Emitter
Saturation Voltage
VCE(sat) -0.25 -0.35 V IC=-150mA,
IB=-15mA*
Base-Emitter
Saturation Voltage
VBE(sat) -1.1 -1.1 V IC=-150mA,
IB=-15mA*
Static Forward
Current Transfer
Ratio
hFE 100
15
300 50
10
150 IC=-150mA,
VCE
=-10V*
IC=-1A, VCE
=-10V*
Transition
Frequency
fT150 150 MHz IC=-50mA, VCE
=-10V
f=100MHz
E-Line
TO92 Compatible
ZTX550
ZTX551
3-194
C
B
E
D.C.
1s
100ms
10ms
1.0ms
0.3ms
0.1ms
TYPICAL CHA RACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
IC - Collector Current (Amps)
VBE(sat) v IC
VBE(on) v IC
V
BE(sat)
- (Volts)
-0.6 -0.01 -10-0.1 -1
-0.7
-0.8
-0.9
-1.0
0-0.01 -0.1 -10-1
-0.2
-0.4
-0.6
-0.8
ZTX550
IC/IB=10
ZTX551
IC - Collector Current (Amps)
hFE v IC
h
FE
- Normalised Gain (%)
-0.001 -0.01 -10-0.1 -1
20
40
60
80
100
ZTX551
IC - Collector Current (Amps)
V
BE
- (Volts)
-0.8
-1.0
-1.2
-1.4
-0.01 -0.1 -1 -10
-0.6
I
C
- Collector Current (Amps)
VCE - Collector Voltage (Volts)
Safe Operating Area
0.1 100110
0.01
0.1
1
10 Single Pulse Test at Tamb=25°C
ZTX550
ZTX551
ZTX550
ZTX551
3-195
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 60 Volt VCEO
* 1 Amp continuous current
*P
tot= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX550 ZTX551 UNIT
Collector-Base Voltage VCBO -60 -80 V
Collector-Emitter Voltage VCEO -45 -60 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -2 A
Continuous Collector Current IC-1 A
Power Dissipation: at Tamb
=25°C
derate above 25°C
Ptot 1
5.7
W
mW/ °C
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL ZTX550 ZTX551 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO -60 -80 V IC=-100µA
Collector-Emitter
Sustaining Voltage
VCEO(sus) -45 -60 V IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5 -5 V IE=-100µA
Collector Cut-Off
Current
ICBO -0.1
-0.1 µA
µA
VCB
=-45V
VCB
=-60V
Emitter Cut-Off
Current
IEBO -0.1 -0.1 µAVEB
=-4V
Collector-Emitter
Saturation Voltage
VCE(sat) -0.25 -0.35 V IC=-150mA,
IB=-15mA*
Base-Emitter
Saturation Voltage
VBE(sat) -1.1 -1.1 V IC=-150mA,
IB=-15mA*
Static Forward
Current Transfer
Ratio
hFE 100
15
300 50
10
150 IC=-150mA,
VCE
=-10V*
IC=-1A, VCE
=-10V*
Transition
Frequency
fT150 150 MHz IC=-50mA, VCE
=-10V
f=100MHz
E-Line
TO92 Compatible
ZTX550
ZTX551
3-194
C
B
E
D.C.
1s
100ms
10ms
1.0ms
0.3ms
0.1ms
TYPICAL CHA RACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
IC - Collector Current (Amps)
VBE(sat) v IC
VBE(on) v IC
V
BE(sat)
- (Volts)
-0.6 -0.01 -10-0.1 -1
-0.7
-0.8
-0.9
-1.0
0-0.01 -0.1 -10-1
-0.2
-0.4
-0.6
-0.8
ZTX550
IC/IB=10
ZTX551
IC - Collector Current (Amps)
hFE v IC
h
FE
- Normalised Gain (%)
-0.001 -0.01 -10-0.1 -1
20
40
60
80
100
ZTX551
IC - Collector Current (Amps)
V
BE
- (Volts)
-0.8
-1.0
-1.2
-1.4
-0.01 -0.1 -1 -10
-0.6
I
C
- Collector Current (Amps)
VCE - Collector Voltage (Volts)
Safe Operating Area
0.1 100110
0.01
0.1
1
10 Single Pulse Test at Tamb=25°C
ZTX550
ZTX551
ZTX550
ZTX551
3-195
