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IECQ-CECC QC 88000-C002
COMPONENT ISSUE 3
SPECIFICATION
March 2007
Component Specification
For
Ceramic Hermetically Sealed
High Speed Optocouplers
Up-to-date lists and bibliographical references of IEQC-CECC publications may be downloaded from www.iecq.org
Further copies of this document may be obtained from:
IEC
International Electrotechnical Commission
Commission Electrotechnique Internationale
Box 131, rue de Varembé, CH 1211 Geneva 20, Switzerland
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FOREWORD
The IECQ Quality Assessment System for Electronic Components (IECQ) is composed of those member countries of
the International Electrotechnical Commission (IEC) who wish to take part in a harmonized system for electronic
components of assessed quality. IECQ is also known in some European member countries as IECQ-CECC.
The object of the System is to facilitate international trade by the harmonization of the specifications and quality
assessment procedures for electronic components, and by the grant of an internationally recognised Mark, or
Certificate of Conformity. The components produced or services provided under the system are thereby acceptable in
all member countries without further testing.
This Component Specification is based upon the requirements of IEC Publication QC 001002-2, and has been
prepared by:
Isocom Ltd
Hutton Close
Crowther Industrial Estate
Washington
Tyne and Wear
NE38 0AH
Tel: +44 0191 4166 546
Fax: +44 0191 4155 055
and published under the authority of:
BSI Product Services
Maylands Avenue
Hemel Hempstead
Hertfordshire
HP2 4SQ
United Kingdom
AMENDMENT RECORD
Issue 1 – Changed Page 4 – Amendments 06/07/09
Issue 2 – Changed Pages 3, 4, 5 & 6 – RoHS Compliant & Amendments – 13/07/10
REQUIREMENTS
The requirements for IECQ-CECC Component Specifications as detailed in QC 001002-2 Amendment 1 clause 5.4 are
satisfied by the following data sheet.
It should note that IECQ-CECC are not responsible for manufacturers declarations made in data sheets which fall
outside the limits of approved detailed in IECQ-CECC certificates.
This Component Specification is intended for use with applicable IECQ-CECC Assessment Specifications. Eg: QC
88000-A0001
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©2007 Copyright reserved to Isocom Limited Page 3 of 12 QC 88000-C001: 2007
Ceramic Hermetically Sealed High Speed Optocouplers
■ 4N55
■ CSM168-4
■ CD850 ■ CSM1800
■ CH380 ■ CSM1801
■ CS800/801 ■ MC800
■ CSM168-2
Features Applications
▪ Release to IECQ-CECC ▪ Military, high reliability system
▪ Hermetically Sealed ▪ Medical instruments
▪ High Density Packaging ▪ Mos, Cmos Applications
▪ 1500V DC withstand Test Voltage ▪ Logic Interfacing
▪ Low Input Requirements ▪ Data Transmission
▪ High Current Transfer Ratio ▪ Power Supply
▪ RoHS Compliant
Description
These devices are single, dual and quad, hermetically sealed optocouplers. Each channel is
composed of an infra-red light emitting diode and a photon detector high speed transistor output.
Package styles for these devices include 6 pin, 8 pin, 16 pin flat pack, 6 pin LCC and hybrid 6 pin,
with surface mount, butt cut and gull wing options available. Separate connections for the
photodiodes and output transistor collectors improve the speed up to a hundred times that of a
conventional phototransistor optocoupler by reducing the base-collector capacitance.
The same electrical die, assembly processes and materials are used for each channel of each
device shown below. Therefore absolute maximum ratings, recommended operating conditions,
electrical specifications and performance characteristics are identical for all units. Any exceptions,
due to packaging variations and limitations, are as noted.
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Selection Guide Package Styles and Configuration Options
Package
6pin
metal Can
TO-5
6 pin
Hybrid 6 Pad LCC 8 pin DIP 16 pin DIP
16 pin
Flat Pack
Lead Style
Channels 1 1 1 1/2 2 2/4
Common Channel Wiring
Isocom Part Numbers and Options
Commercial
MC800 CH380 CSM1800/01
CD850
CS800/801 4N55 CSM168
Defense Level
MC800/L2 CH380/L2 CSM1800/01/L2
CD850/L2
CS800/801/L2 4N55/L2
CSM168/L2
Space Level
MC800/L2S
CH380/L2S
CSM1800/01/L2S
CD850/L2S
CS800/801/L2S 4N55/L2S CSM168/L2S
Standard Gold Plate Finish Gold Plate Gold Plate Gold Plate Gold Plate Gold Plate Gold Plate
Solder Dipped Option 20 Option 20
Butt Cut/Gold Plate Option 10 Option 10
Gull Wing/Soldered Option 30 Option 30
Crew Cut/Gold Plate Option 60 Option 60
Functional Diagrams
MC800 CH380 CSM1800/01 CD850 4N55 CSM168-2
6 pin TO-5 6 pin Hybrid 6 pad LCC 8 pin DIP 16 pin DIP 16 pin Flat Pack
1 Channel 1 Channel 1 Channel 2 Channel 2 Channel 2 Channel
5
71
2
3
CS800/801 CSM168-4
8 pin DIP 16 pin Flat Pack
1 Channel 4 Channel
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Outline Drawings
16 pin DIP, 4 Channel
16 pin Flat Pack, 2 and 4 Channel
NOTE: DIMENSIONS IN
MILLIMETERS
6 pin TO-5, 1 Channel
0.040(1.02)
0.32 (8.13)
0.5 (12.70)
0.17 (4.32)
0.022 (5.08)
45.0°
0.037 (0.935)
0.031 (0.787)
1
2
356
7
6 LEADS
0.0175 (0.445)
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8 pin DIP 1 and 2 Channel
6 Terminal LCC Surface Mount, 1 Channel
4.318
CSM1800
6.223
5
4
3 2
1.651
0.635
1
6
2.286
R = .2286
1.27
2.54
1.67
0.762
0.635
Device Marking
XXXXXXX
ISOCOM
XXXX
Isocom Part Number
Manufacturer
Date Code (XX year XX week)
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Hermetic Optocoupler Options
Option
Description
10
Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is
available on commercial hi-rel product in 8 and 16 pin DIP
20
30
Surface mountable hermetic optocoupler with leads cut and bent for gull wing assembly. This option is
available on commercial and hi-rel product in 8 and 16 pin DIP.
60
Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is
available on commercial hi-rel product in 8 and 16 pin DIP
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Absolute Maximum Ratings
Storage Temperature -65°C to +150°C
Operating Temperature -55°C to +125°C
Input Diode
Peak Forward Current 40mA ≤ 1 mS duration
Average Forward Current 20mA
Reverse Voltage 5V
Power Dissipation 36mW Derate linearly above 100°C at 1.4W/°C for CH380 and
CS800/801
Output Detector
Supply Voltage -0.5 to 20V V
CC
Average Current 8mA I
O
Peak Current 16mA I
O
Voltage -0.5 to 20V V
O
Power Dissipation 40mW For CH380 and CS800/801
50mW Derate linearly above 100°C at 1.4W/°C for CD850,
CSM6530 and 4N55
Emitter-Base Reverse Voltage 3V BV
EBO
Base Current 5mA I
B
Single Channel Schematic
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Electrical Characteristics
T
A =
-55°C to +125°C U.O.S.
All typical values at V
CC
= 5V, T
A
= 25°C (each channel where appropriate).
Parameter Symbol Test Conditions Device Min Type Max Units
9 20 - V
CC
= 4.5V, V
O
= 0.4V,I
F
= 16mA,
CS801 15 -
Current Transfer Ratio
(See notes 1 & 2)
h
f(CTR)
V
CC
= 4.5V, V
O
= 0.5V, I
F
= 16mA CD850 9 17 -
%
- 0.3 0.4 Logic Low Output Voltage
V
OL
V
CC
= 4.5V, I
F
= 16mA
I
O
= 1.44mA CD850 - 0.3 0.5
V
I
F1
= 0, I
F2
= 20mA
V
O
= V
CC
= 18V
Logic High Output
Current (See note 1)
I
OH
I
F1
=
F2
= 20mA, V
O
= V
CC
= 15
CD850
CSM1800
- 30 250 µA
V
CC
= 18V, I
F1
= I
F2
= 20Ma
V
CC
= 18V, I
F1
= 20Ma CS800/1
V
CC
= 15V I
F1
= 16Ma I
F2
=0
CH380
CSM1800
- 30 200 Logic Low Supply Current
(See note 1)
I
CCL
V
CC
= 16V
F1
= I
F2
=16mA CD850 400
µA
Logic High Supply
Current (See note 1)
I
CCH
Vcc = 18V, I
F
= 0mA, IF (other
channel) = 20mA
- 0.4 10
µA
Input Forward Voltage
(See note 1)
V
F
I
F
= 20mA - 1.45 1.9 V
Input Reverse Breakdown
(See note 1)
V
BR
I
R
= 10µA 3 - - V
RH = 45%, T
A
= 25°C, t = 5S
V
IO
= 1500VDC
Input-Output Insulation
Leakage Current
(See notes 3 & 9)
I
IO
RH = 45%, T
A
= 25°C, t = 5S
V
IO
= 500VDC
CH380
- - 1.0 µA
R
L
= 8.2KΩ, I
F
= 16mA, V
CC
= 5V
C
L
= 50pF
- 0.4 2.0
Propagation Delay Time
to Logic Low at Output
(See note 1)
t
PHL
R
L
= 1.9K, I
F
= 16mA, V
CC
= 5V CD850
CSM1800
2.0
µS
R
L
= 8.2KΩ, I
F
= 16mA, V
CC
= 5V
C
L
= 50pF
- 2.0 6.0
Propagation Delay Time
to Logic High at Output
(See note 1)
t
PLH
R
L
= 1.9K, I
F
= 16mA, V
CC
= 5V CD850
CSM1800
6.0
µS
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Typical Characteristics
T
A
= 25°C
Parameter Symbol Test Conditions Notes Min Type Max Units
Temperature Coefficient of
Forward Voltage
∆
VF
∆
TA
I
F
= 20mA 1 - -1.9 - mV/°C
Input Capacitance C
IN
f = 1mhz, V
F
= 0 1 - 125 - pF
Resistance (Input-Output) R
I-O
V
1-0
= 500Vdc 1 - 10
12
- Ω
Capacitance (Input-Output) C
I-O
f = 1MHz 1 & 4 - 1.0 - pF
Input-Input Insulation
Leakage Current
I
I-I
45% Relative Humidity
VH = 500Vdc, t = 5S
5 - 1 - pA
Capacitance (Input-Input) C
I-I
f = 1MHz 5 - 0.6 - pF
Transistor DC Current Gain hFE V
O
= 5V, I
O
= 3mA 1 - 130 - -
Small Signal Current
Transfer Ratio
∆I
O
∆I
F
V
CC
= 5V, V
O
= 2V 1 - 20 - %
Common Mode Transient
Immunity at Logic Low Level
Output
CM
L
I
F
= 16mA,R
L
= 8.2KΩ
V
CM
= 10V
P-P
V
O
(max) = 0.8V
1 & 7 - -1000 - V/µS
Common Mode Transient
Immunity at Logic High Level
Output
CM
H
I
F
= 0mA,R
L
= 8.2KΩ
V
CM
= 10V
P-P
V
O
(max) = 2.0V
1 & 6 - 1000 - V/µS
Bandwidth BW RL = 100Ω 8 - 2 - MHz
Notes (Apply typically to 16 pin package)
1. Each channel, where appropriate.
2. Current Transfer ratio is defined as the ratio of output collector current, IO, to the forward LED input current, I
F
, times
100%. CTR is known to degrade slightly over the unit’s lifetime as a function of input current, temperature, signal duty
cycle and system on time. It is recommended that designers allow at least 20-25% guard band for CTR degradation.
3. Measured between pins 1 through 8 shorted together, and pins 9 through 16 shorted together.
4. Measured between each input pair shorted together, and the output pins for that channel shorted together.
5. Measured between pins 3 and 4 shorted together, and pins 7 and 8 shorted together.
6. CM
H
is the steepest slope (dV/dt) on the leading edge of the common mode pulse, V
CM
, for which the output will
remain in the logic high state (i.e., V
O
> 2.0V).
7. CM
L
is the steepest slope (dV/dt) on the trailing edge of the common mode pulse, V
CM
, for which the output will
remain in the logic low state (i.e., VO < 0.8V).
8. Bandwidth is the frequency at which the AC output voltage is 3dB below the low frequency asymptote.
9. This is a momentary withstand test, not an operating condition.
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Electrical Characteristics
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