1N4003GP-HE3/54 - Vishay Presicion Group

Document Number: 88504 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Glass Passivated Junction Rectifier

1N4001GP thru 1N4007GP

Vishay General Semiconductor

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes for both

consumer and automotive applications.

FEATURES

• Superectifier structure for high reliability

application

• Cavity-free glass-passivated junction

• Low forward voltage drop

• Low leakage current, typical IR less than 0.1 μA

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

MECHANICAL DATA

Case: DO-204AL, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

Notes

(1) JEDEC registered values

(2) For device using on bridge rectifier application

PRIMARY CHARACTERISTICS

IF(AV) 1.0 A

VRRM 50 V to 1000 V

IFSM (8.3 ms sine-wave) 30 A

IFSM (square wave tp = 1 ms) 45 A

IR5.0 μA

VF1.1 V

TJ max. 175 °C

DO-204AL (DO-41)

SUPERECTIFIER

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT

Maximum repetitive peak

reverse voltage VRRM 50 100 200 400 600 800 1000 V

Maximum RMS voltage VRMS (1) 35 70 140 280 420 560 700 V

Maximum DC blocking voltage VDC (1) 50 100 200 400 600 800 1000 V

Maximum average forward rectified

current 0.375" (9.5 mm) lead length

at TA = 75 °C

IF(AV) (1) 1.0 A

Non-repetitive peak

forward surge current

square waveform

TA = 25 °C (fig. 3)

tp = 1 ms

IFSM (1)

Atp = 2 ms 35

tp = 5 ms 30

Maximum full load reverse current,

full cycle average 0.375" (9.5 mm)

lead length TA = 75 °C

IR(AV) (1) 30 μA

Rating for fusing (t < 8.3 ms) I2t (2) 3.7 A2s

Operating junction and

storage temperature range TJ, TSTG (1) - 65 to + 175 °C

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88504

2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

1N4001GP thru 1N4007GP

Vishay General Semiconductor

Note

(1) JEDEC registered values

Note

(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, PCB mounted

Note

(1) AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST

CONDITIONS SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT

Maximum

instantaneous

forward voltage

1.0 A VF1.1 V

Maximum DC

reverse current

at rated DC

blocking voltage

TA = 25 °C

IR (1)

5.0

μA

TA = 125 °C 50

Typical reverse

recovery time

IF = 0.5 A,

IR = 1.0 A,

Irr = 0.25 A

trr 2.0 μs

Typical junction

capacitance

4.0 V,

1 MHz CJ8.0 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT

Typical thermal resistance RJA (1) 55 °C/W

RJL (1) 25

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

1N4004GP-E3/54 0.335 54 5500 13" diameter paper tape and reel

1N4004GP-E3/73 0.335 73 3000 Ammo pack packaging

1N4004GPHE3/54 (1) 0.335 54 5500 13" diameter paper tape and reel

1N4004GPHE3/73 (1) 0.335 73 3000 Ammo pack packaging

025 50 75 100 125 150 175

0.2

0.4

0.6

0.8

1.0

Ambient Temperature (°C)

Average Forward Rectied Current (A)

60 Hz

Resistive or Inductive Load

0.375" (9.5 mm) Lead Length

101 100

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

= T

Max.

8.3 ms Single Half Sine-Wave

Document Number: 88504 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

1N4001GP thru 1N4007GP

Vishay General Semiconductor

Fig. 3 - Non-Repetitive Peak Forward Surge Current

Fig. 4 - Typical Instantaneous Forward Characteristics

Fig. 5 - Typical Reverse Characteristics

Fig. 6 - Typical Junction Capacitance

Fig. 7 - Typical Transient Thermal Impedance

50 75 100

25 125

Ambient Temperature (°C)

Square Waveform

= 1 ms

= 5 ms

= 2 ms

Peak Forward Surge Current (A)

0.6 0.8 1.0 1.2 1.4 1.6

0.01

0.1

100

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

TJ = 25 °C

Pulse Width = 300 μs

1 % Duty Cycle

0.01

0.1

60 80 10020 40

= 25 °C

= 100 °C

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Current (μA)

0.1 101 100

100

Reverse Voltage (V)

Junction Capacitance (pF)

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

0.01 0.1 101 100

0.1

100

Transient Thermal Impedance (°C/W)

t - Pulse Duration (s)

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88504

4DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

1N4001GP thru 1N4007GP

Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-204AL (DO-41)

1.0 (25.4)

MIN.

1.0 (25.4)

MIN.

0.205 (5.2)

0.160 (4.1)

0.107 (2.7)

0.080 (2.0)

DIA.

0.034 (0.86)

0.028 (0.71)

DIA.

• Lead diameter isfor sufx “E” part numbers

0.026 (0.66)

0.023 (0.58)

Note

Legal Disclaimer Notice

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Revision: 12-Mar-12 1Document Number: 91000

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