© Semiconductor Components Industries, LLC, 2019
September, 2019 − Rev. 1 1Publication Order Number:
MOC3083M/D
6-Pin DIP Zero-Cross Triac
Driver Optocoupler
(800 V Peak)
MOC3081M, MOC3082M,
MOC3083M
Description
The MOC3081M, MOC3082M and MOC3083M devices consist of
a GaAs infrared emitting diode optically coupled to a monolithic
silicon detector performing the function of a zero voltage crossing
bilateral triac driver.
They are designed for use with a discrete power triac in the interface
of logic systems to equipment powered from 240 VAC lines, such as
solid−state relays, industrial controls, motors, solenoids and consumer
appliances, etc.
Features
•Simplifies Logic Control of 240 VAC Power
•Zero Voltage Crossing to Minimize Conducted and Radiated Line
Noise
•800 V Peak Blocking Voltage
•Superior Static dv/dt
♦1500 V/ms Typical, 600 V/ms Guaranteed
•Safety and Regulatory Approvals
♦UL1577, 4,170 VACRMS for 1 Minute
♦DIN EN/IEC60747−5−5
•These are Pb−Free Devices
Applications
•Solenoid/Valve Controls
•Lighting Controls
•Static Power Switches
•AC Motor Starters
•Temperature Controls
•E.M. Contactors
•AC Motor Drives
•Solid State Relays
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PDIP6 8.51x6.35, 2.54P
CASE 646BZ
See detailed ordering and shipping information on page 9 o
f
this data sheet.
ORDERING INFORMATION
PDIP6 8.51x6.35, 2.54P
CASE 646BY
PDIP6 8.51x6.35, 2.54P
CASE 646BX
Figure 1. Schematic
MAIN TERM
.
NC*
N/C
*DO NOT CONNECT
(TRIAC SUBSTRATE)
1
2
3
ANODE
CATHODE
4
5
6
CIRCUIT
MAIN TERM
.
CROSSING
ZERO
MOC3081M, MOC3082M, MOC3083M
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SAFETY AND INSULATION RATINGS
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Parameter Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1, For
Rated Mains Voltage
< 150 VRMS I–IV
< 300 VRMS I–IV
Climatic Classification 40/85/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test
with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test
with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak
VIORM Maximum Working Insulation Voltage 850 Vpeak
VIOTM Highest Allowable Over−Voltage 6000 Vpeak
External Creepage ≥ 7mm
External Clearance ≥ 7mm
External Clearance (for Option TV, 0.4” Lead Spacing) ≥ 10 mm
DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm
RIO Insulation Resistance at TS, VIO = 500 V > 109W
MOC3081M, MOC3082M, MOC3083M
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ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Symbol Parameters Value Unit
Total Device
TSTG Storage Temperature −40 to 150 °C
TOPR Operating Temperature −40 to 85 °C
TJJunction Temperature Range −40 to 100 °C
TSOL Lead Solder Temperature 260 for 10 seconds °C
PDTotal Device Power Dissipation at 25°C Ambient 250 mW
Derate Above 25°C 2.94 mW/°C
Emitter
IFContinuous Forward Current 60 mA
VRReverse Voltage 6 V
PDTotal Power Dissipation at 25°C Ambient 120 mW
Derate Above 25°C 1.41 mW/°C
Detector
VDRM Off−State Output Terminal Voltage 800 V
ITSM Peak Non−Repetitive Surge Current
(Single Cycle 60 Hz Sine Wave) 1 A
PDTotal Power Dissipation at 25°C Ambient 150 mW
Derate Above 25°C 1.76 mW/°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
MOC3081M, MOC3082M, MOC3083M
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ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
INDIVIDUAL COMPONENT CHARACTERISTICS
Symbol Parameters Test Conditions Min. Typ. Max. Unit
Emitter
VFInput Forward Voltage IF = 30 mA 1.3 1.5 V
IRReverse Leakage Current VR = 6 V 0.005 100 mA
Detector
IDRM1 Peak Blocking Current, Either Direction VDRM = 800 V, IF = 0(1) 10 500 nA
dv/dt Critical Rate of Rise of Off−State Voltage IF = 0 (Figure 10) (2) 600 1500 V/ms
1. Test voltage must be applied within dv/dt rating.
2. This is static dv/dt. See Figure 11 for test circuit. Commutating dv/dt is a function of the load−driving thyristor(s) only.
TRANSFER CHARACTERISTICS
Symbol DC Characteristics Test Conditions Device Min. Typ. Max. Unit
IFT LED Trigger Current (Rated IFT)Main Terminal
Voltage = 3 V(3) MOC3081M 15 mA
MOC3082M 10
MOC3083M 5
VTM Peak On−State Voltage,
Either Direction ITM = 100 mA peak,
IF = rated IFT All 1.8 3.0 V
IHHolding Current, Either Direction All 500 mA
3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating I F lies between max IFT
(15 mA for MOC3081M, 10 mA for MOC3082M, 5 mA for MOC3083M) and absolute maximum IF (60 mA).
ZERO CROSSING CHARACTERISTICS
Symbol Parameters Test Conditions Min. Typ. Max. Unit
VINH Inhibit Voltage (MT1−MT2 voltage above which
device will not trigger) IF = Rated IFT 12 20 V
IDRM2 Leakage in Inhibited State IF = Rated IFT, VDRM = 800 V,
off−state 2 mA
ISOLATION CHARACTERISTICS
Symbol Parameters Test Conditions Min. Typ. Max. Unit
VISO Isolation Voltage (4) f = 60 Hz, t = 1 Minute 4170 VACRMS
RISO Isolation Resistance VI−O = 500 VDC 1011 W
CISO Isolation Capacitance V = 0 V, f = 1 MHz 0.2 pF
4. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are
common.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MOC3081M, MOC3082M, MOC3083M
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TYPICAL PERFORMANCE CUR VES
Figure 2. LED Forward Voltage vs. Forward
Current
IF, LED FORWARD CURRENT (mA)
0.1 1 10 100
VF, FORWARD VOLTAGE (V)
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
TA = −40_C
TA = 25_C
TA = 85_C
Figure 3. Trigger Current vs. Temperature
TA, AMBIENT TEMPERATURE (_C)
−40 −20 0 20 40 60 80 100
IFT, NORMALIZED
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
VTM A = 25_C
= 3 V
NORMALIZED TO T
Figure 4. LED Current Required to Trigger vs. LED
Pulse Width
PWIN, LED TRIGGER PULSE WIDTH (ms)
10
1 100
IFT, LED TRIGGER CURRENT (NORMALIZED)
0
2
4
6
8
10
12
14
16
IN >> 100 ms
NORMALIZED TO PW
TA = 25_C
Figure 5. Leakage Current, IDRM vs. Temperature
TA, AMBIENT TEMPERATURE (_C)
−40 −20 0 20 40 60 80 100
IDRM, LEAKAGE CURRENT (nA)
0.1
1
10
100
1000
10000
MOC3081M, MOC3082M, MOC3083M
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TYPICAL PERFORMANCE CURVES (Continued)
Figure 6. IDRM2, Leakage in Inhibit State vs.
Temperature
TA, AMBIENT TEMPERATURE (_C)
−40 −20 0 20 40 60 80 100
IDRM2, NORMALIZED
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4 IF = RATED IFT
NORMALIZED TO TA = 25_C
Figure 7. On−State Characteristics
VTM, ON−STATE VOLTAGE (VOLTS)
−4 −3 −2 −1 0 1 2 3 4
ITM, ON−STATE CURRENT (mA)
TA = 25_C
−800
−600
−400
−200
0
200
400
600
800
Figure 8. IH, Holding Current vs. Temperature
TA, AMBIENT TEMPERATURE (_C)
−40 −20 0 20 40 60 80 100
IH, HOLDING CURRENT (NORMALIZED)
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Figure 9. Inhibit Voltage vs. Temperature
TA, AMBIENT TEMPERATURE (_C)
−40 −20 0 20 40 60 80 100
VINH, NORMALIZED
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
NORMALIZED TO TA = 25_C
MOC3081M, MOC3082M, MOC3083M
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Figure 10. Static dv/dt Test Circuit
3. The worst−case condition for static dv/dt is established
by triggering the D.U.T. with a normal LED input current,
then removing the current. The variable RTEST allows
the dv/dt to be gradually increased until the D.U.T.
continues to trigger in response to the applied voltage
pulse, even after the LED current has been removed.
The dv/dt is then decreased until the D.U.T. stops
triggering. RC is measured at this point and recorded.
1. The mercury wetted relay provides a high speed
repeated pulse to the D.U.T.
2. 100x scope probes are used, to allow high speeds and
voltages.
t
Vdc
800 V
10 kW
CTEST
PROBE
PULSE
INPUT MERCURY
WETTED
RELAY
RTEST
D.U.T.D.U.T.
Figure 11. Static dv/dt Test Waveform
504 V
0 VOLTS
APPLIED VOLTAGE
WAVEFORM
Vmax = 800 V
dv/dt = 0.63 Vmax = 504
tRC
tRC tRC
Typical circuit for use when hot line switching is required.
In this circuit the “hot” side of the line is switched and the
load connected to the cold or neutral side. The load may be
connected to either the neutral or hot line.
RIN is calculated so that IF is equal to the rated IFT of the
part, 15 mA for the MOC3081M, 10 mA for the
MOC3082M, and 5 mA for the MOC3083M. The 39 W
resistor and 0.01 mF capacitor are for snubbing of the triac
and may or may not be necessary depending upon the
particular triac and load use.
Figure 12. Hot−Line Switching Application Circuit
0.01
VCC
Rin 1
2
3
6
5
4240 VAC
HOT
FKPF12N80
NEUTRAL
360 W
* For highly inductive loads (power factor < 0.5), change this value to 360 W.
330 W
MOC3081M
MOC3082M
MOC3083M 39*
LOAD
Figure 13. Inverse−Parallel SCR Driver Circuit
VCC
Rin
1
2
3
6
5
4
240 VAC
SCR
360 W
R1 D1
SCR
MOC3081M
MOC3082M
MOC3083M
R2 D2
LOAD
Suggested method of firing two, back−to−back SCR’s
with an ON Semiconductor triac driver. Diodes can be
1N4001; resistors, R1 and R2, are optional 330 W.
NOTE: This optoisolator should not be used to drive a
load directly. It is intended to be a trigger device
only.
MOC3081M, MOC3082M, MOC3083M
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Reflow Profile
Figure 14. Reflow Profile
Time (seconds)
Temperature
Time 25°C to Peak
260
240
220
200
180
160
140
120
100
80
60
40
20
0
TL
ts
tL
tP
TP
Tsmax
Tsmin
120
Preheat Area
240 360
( C)5
Max. Ramp−up Rate = 3°C/s
Max. Ramp−down Rate = 6°C/s
Profile Freature Pb−Free Assembly Profile
Temperature Minimum (Tsmin) 150°C
Temperature Maximum (Tsmax) 200°C
Time (tS) from (Tsmin to Tsmax) 60 seconds to 120 seconds
Ramp−up Rate (TL to TP) 3°C/second maximum
Liquidous Temperature (TL) 217°C
Time (tL) Maintained Above (TL)60 seconds to 150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C
Time (tP) within 5°C of 260°C30 seconds
Ramp−down Rate (TP to TL) 6°C/second maximum
T ime 25 °C to Peak Temperature 8 minutes maximum
MOC3081M, MOC3082M, MOC3083M
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ORDERING INFORMATION
Part Number Package Shipping
MOC3081M DIP 6−Pin 50 Units / Tube
MOC3081SM SMT 6−Pin (Lead Bend) 50 Units / Tube
MOC3081SR2M SMT 6−Pin (Lead Bend) 1000 Units / Tape & Reel
MOC3081VM DIP 6−Pin, DIN EN/IEC60747−5−5 Option 50 Units / Tube
MOC3081SVM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option 50 Units / Tube
MOC3081SR2VM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option 1000 Units / Tape & Reel
MOC3081TVM DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option 50 Units / Tube
NOTE: The product orderable part number system listed in this table also applies to the MOC3011M, MOC3012M, MOC3020M,
MOC3021M, MOC3022M, and MOC3083M product families.
MARKING INFORMATION
Figure 15. Top Mark
MOC3081
1
2
6
43 5
V X YY Q
ON
Top Mark Definitions
1ON Semiconductor Logo
2Device Number
3DIN EN/IEC60747−5−5 Option (only appears on component ordered with this option)
4One−Digit Year Code, e.g., ‘5’
5Two−Digit Work Week, Ranging from ‘01’ to ‘53’
6Assembly Package Code
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O
DATE 31 JUL 2016
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
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DATE 15 JUL 2019
A
B
MECHANICAL CASE OUTLINE
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
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PDIP6 8.51x6.35, 2.54P
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DATE 31 JUL 2016
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
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