TRFS40,641 D84ER2,R1 8 AMPERES 500, 450 VOLTS RDS(ON) = 0.85 0 POWER IMOS [FET FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear N-CHANNEL CASE STYLE TO-220AB DIMENSIONS ARE iN fNCHES AND (MILLIMETERS) il 7162.95) transfer characteristics makes it well suited for many linear jr senest +" 1078 Tote 32a fe 25513) applications such as audio amplifiers and servo motors. 5 = 7 A .265(6.73) Features x F 4 ae | Tempe RaTURE REFERENCE e Polysilicon gate Improved stability and reliability / seston ror saree 32518.26) 2208.89) @ No secondary breakdown Excellent ruggedness | b 4 . . + .130(3.3) ol I eae : e Ultra-fast switching Independent of temperature er TERM.1 Voltage controlled High transconductance rer? oan SOONG TIMIN. Low input capacitance Reduced drive requirement TERMS eye : 0812.67) , Excellent thermal stability Ease of paralleling a (2.41) .021(0.53 UNIT TYPE |TERM1}TEAM.2) TERM.3 TAB POWER MOS FET/T0-220-AB] GATE |DRAIN}SOURCE| ORAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF840/D84ER2 IRF841/D84ER1 UNITS Drain-Source Voltage Voss 500 450 Volts Drain-Gate Voltage, Ras = 1M VoGer 500 450 Volts Continuous Drain Current @ To = 25C Ip 8 8 A @ To = 100C 5 5 A Pulsed Drain Current IDM 32 32 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 125 125 Watts Derate Above 25C 1.0 1.0 W/C Operating and Storage Junction Temperature Range Ty, Tsta@ -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rguc 1.00 1.00 C/W Thermal Resistance, Junction to Ambient Resa 80 80 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds Th 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 229 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC _| SYMBOL; MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voitage IRF840/D84ER2 | BVposs 500 _ _ Volts (V@s = OV, Ip = 250 uA) IRF841/D84ER1 450 _ Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Vag = OV, To = 25C) _ _- 250 | BA (Vps = Max Rating, 0.8, Vag = OV, To = 125C) _ _ 1000 Gate-Source Leakage Current on characteristics Gate Threshold Voltage To = 25C | Vestry) 2.0 _ 4.0 Volts (Vps = Vas, Ip = 250 uA) On-State Drain Current (Vag = 10V, Vpg = 10V) ID(ON) 8 - A Static Drain-Source On-State Resistance (Vag = 10V, Ip = 4A) Rps(on) _ 0.75 0.85 Ohms Forward Transconductance (Vpg = 10V, Ip = 4A) Ofs 2.8 3.5 _ mhos dynamic characteristics Input Capacitance Ves = OV Ciss _ 1400 1600 pF Output Capacitance Vos = 25V Coss _ 190 350 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 28 150 pF switching characteristics* Turn-on Delay Time Vos = 225V ta(on) _ 20 _ ns Rise Time Ip = 4A, Vas = 15V tr _ 20 _ ns Turn-off Delay Time ReGen = 500, Res = 12.59 tdtoff) _ 60 _ ns Fall Time (Res (eQuiv.) = 10) tt _ 30 - ns source-drain diode ratings and characteristics Continuous Source Current Is _ - 8 A Pulsed Source Current Ism _ _ 32 A Diode Forward Voltage _ (To = 28C, Vag = OV, Ig = BA) Vsp 0.9 2.0 Volts Reverse Recovery Time tre _ 520 _ ns (Ig = 8A, dig/dt = 100A/usec, Tc = 125C) Qrar _ 6.4 uC *Pulse Test: Pulse width < 300 us, duty cycle = 2% 100 80 60 40 7 MAY BE LIMITED BY Rngion; Ip, ORAIN CURRENT (AMPERES) 0 8 OPERATION IN THIS AREA 6 4 SINGLE PULSE T= 25C 6 810 20 40 6080100 200 400 600 1000 Vos: ORAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 1 2 4 230 CONDITIONS: Rosiony CONDITIONS: Ip = 4.0 A, Vg = 10V V@scrH) CONDITIONS: Ip = 250pA, Ving = Vag Rosion: VesitH) Poston) AND Vesrryy NORMALIZED 40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rysjon AND Vasitu) VS. TEMP.