SEMICONDUCTOR MBR10200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A O FEATURES C F Average Output Rectified Current E : IO=10A. G B Repetitive Peak Reverse Voltage Q : VRRM=200V. I Fast Reverse Recovery Time : trr=35ns. K P M L J D N MAXIMUM RATING (Ta=25 H N ) CHARACTERISTIC Repetitive Peak Reverse Voltage Average Output Rectified Current (Tc=118 ) (Note) Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VRRM 200 V IO 10 A IFSM 100 A Tj -40 150 Tstg -55 150 1. ANODE 2. CATHODE 3. ANODE DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 J 13.08 + K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q TO-220AB Note : average forward current of centertap full wave connection. 2 1 3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Peak Forward Voltage (Note) Repetitive Peak SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT V VFM IFM=5A - - 0.95 IRRM VRRM=Rated - - 150 IF=1.0A, di/dt=-30A/ - - 35 Juction to Case - - 2.2 Reverse Current (Note) Reverse Recovery Time (Note) trr Thermal Resistance (Note) Rth(j-c) ns /W Note : A value of one cell 2008. 1. 3 Revision No : 0 1/2 MBR10200CT IF - V F IR - V R 10 REVERSE CURRENT IR (A) FORWARD CURRENT IF (A) 10 Tj =25 C 1 0.1 Tj =25 C 1 0.1 0.2 0.4 0.6 0.8 0 1 IF - TC 12 10 8 DC 6 4 RATED VOLTAGE APPLIED R JC = 2.2 C/W 2 0 25 50 75 100 150 200 IF - TA 125 150 175 CASE TEMPERATURE Tc ( C) AVERAGE FORWARD POWER DISSIPATION PF(AV) (W) 100 REVERSE VOLTAGE VR (V) AVERAGE FORWARD CURRENT I F(AV) (A) AVERAGE FORWARD CURRENT IF(AV) (A) FORWARD VOLTAGE VF (V) 50 12 RATED VOLTAGE APPLIED R JA=16 C/W 10 R JA=62.5 C/W (NO HEAT SINK) 8 DC 6 4 2 DC 0 0 40 80 120 160 AMBIENT TEMPERATURE TA ( C) PF(AV) - IF(AV) 10 8 6 DC 4 2 0 0 2 4 6 8 10 12 AVERAGE FORWARD CURRENT IF(AV) (A) 2008. 1. 3 Revision No : 0 2/2