2N2219, 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon http://onsemi.com Features COLLECTOR 3 * MIL-PRF-19500/251 Qualified * Available as JAN, JANTX, and JANTXV 2 BASE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Characteristic Symbol Value Unit Collector -Emitter Voltage VCEO 50 Vdc Collector -Base Voltage VCBO 75 Vdc Emitter -Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 800 mAdc Total Power Dissipation @ TA = 25C PT 0.8 W Total Power Dissipation @ TC = 25C PT 3.0 W TJ, Tstg -65 to +200 C Symbol Max Unit RqJC 50 C/W Operating and Storage Junction Temperature Range 1 EMITTER TO-39 CASE 205AB (2N2219, 2N2219A) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO-5 CASE 205AA (2N2219AL) ORDERING INFORMATION Device Package Shipping TO-39 Bulk TO-5 Bulk JAN2N2219/A JANTX2N2219/A JANTXV2N2219/A JAN2N2219AL JANTX2N2219AL JANTXV2N2219AL (c) Semiconductor Components Industries, LLC, 2012 August, 2012 - Rev. 1 1 Publication Order Number: 2N2219/D 2N2219, 2N2219A, 2N2219AL ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max Unit 30 50 - - - - - 10 10 10 mAdc mAdc nAdc - - 10 10 nAdc nAdc - - - - 10 10 10 10 nAdc mAdc nAdc mAdc 35 50 50 75 75 100 100 30 - - 325 325 - - 300 - - - - - 0.4 0.3 1.6 1.0 0.6 0.6 - - 1.3 1.2 2.6 2.0 2.5 12 50 75 - - - 8.0 - 25 - - 40 35 - - 250 300 OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IE = 10 mAdc) 2N2219 2N2219A/AL Emitter-Base Cutoff Current (VEB = 5.0 Vdc) (VEB = 6.0 Vdc) (VEB = 4.0 Vdc) 2N2219 2N2219A/AL All Collector-Emitter Cutoff Current (VCE = 30 Vdc) (VCE = 50 Vdc) 2N2219 2N2219A/AL Collector-Base Cutoff Current (VCB = 50 Vdc) (VCB = 60 Vdc) (VCB = 60 Vdc) (VCB = 75 Vdc) 2N2219 2N2219 2N2219A/AL 2N2219A/AL V(BR)CEO IEBO ICES ICBO Vdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) 2N2219 2N2219A/AL 2N2219 2N2219A/AL 2N2219 2N2219A/AL 2N2219/A/AL 2N2219/A/AL (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector -Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) 2N2219 2N2219A/AL 2N2219 2N2219A/AL (IC = 500 mAdc, IB = 50 mAdc) Base -Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) 2N2219 2N2219A/AL 2N2219 2N2219A/AL (IC = 500 mAdc, IB = 50 mAdc) hFE VCE(sat) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS |hfe| Magnitude of Small-Signal Current Gain (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1 kHz) 2N2219 2N2219A/AL hfe Output Capacitance (VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz) Cibo - - pF pF SWITCHING CHARACTERISTICS Turn-On Time (Reference Figure in MIL-PRF-19500/251) 2N2219 2N2219A/AL Turn-Off Time (Reference Figure in MIL-PRF-19500/251) 2N2219 2N2219A/AL 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 ton toff ns ns 2N2219, 2N2219A, 2N2219AL PACKAGE DIMENSIONS TO-5 3-Lead CASE 205AA ISSUE B B A B DETAIL X U P C L R F U A SEATING PLANE K NOTE 5 E T NOTE 7 D NOTES 4 & 6 0.007 (0.18MM) A B S C 3X DETAIL X M N H 2 1 3 J M C LEAD IDENTIFICATION DETAIL http://onsemi.com 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE PLANE DEFINED BY DIMENSION R. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. 6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN SIONS A, B, AND T. 8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P. DIM A B C D E F H J K L M N P R T U MILLIMETERS MIN MAX 8.89 9.40 8.00 8.51 6.10 6.60 0.41 0.53 0.23 3.18 0.41 0.48 0.71 0.86 0.73 1.02 38.10 44.45 6.35 --45_BSC 5.08 BSC --1.27 1.37 BSC --0.76 2.54 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR INCHES MIN MAX 0.350 0.370 0.315 0.335 0.240 0.260 0.016 0.021 0.009 0.125 0.016 0.019 0.028 0.034 0.029 0.040 1.500 1.750 0.250 --45 _BSC 0.200 BSC --0.050 0.054 BSC --0.030 0.100 --- 2N2219, 2N2219A, 2N2219AL PACKAGE DIMENSIONS TO-39 3-Lead CASE 205AB ISSUE A B A B DETAIL X U P C L R F U A SEATING PLANE K NOTE 5 E T NOTE 7 D NOTES 4 & 6 3X 0.007 (0.18MM) A B S C DETAIL X M N H 2 1 3 J M C LEAD IDENTIFICATION DETAIL NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE PLANE DEFINED BY DIMENSION R. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. 6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN SIONS A, B, AND T. 8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P. DIM A B C D E F H J K L M N P R T U MILLIMETERS MIN MAX 8.89 9.40 8.00 8.51 6.10 6.60 0.41 0.48 0.23 3.18 0.41 0.48 0.71 0.86 0.73 1.02 12.70 14.73 6.35 --45_BSC 5.08 BSC --1.27 1.37 BSC --0.76 2.54 --- INCHES MIN MAX 0.350 0.370 0.315 0.335 0.240 0.260 0.016 0.019 0.009 0.125 0.016 0.019 0.028 0.034 0.029 0.040 0.500 0.580 0.250 --45 _BSC 0.200 BSC --0.050 0.054 BSC --0.030 0.100 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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