2006 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4751, REV. B
SILICON SCHOTTKY RECTIFIER
Ultra Low Reverse Leakage
175C Operating Temperature
Applications:
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
Features:
Ultra low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
30
V
Max. Average Forward Current
IF(AV)
Maximum DC Output Current
(@ TC=100 OC) (Single,
Doubler)
7.5
A
Max. Average Forward Current
IF(AV)
Maximum DC Output Current
(@ TC=100 OC) (Common
Cathode, Common Anode)
15
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 ms, half Sine wave
75
A
Maximun Thermal Resistence
(Per leg)
RJC
-
5.37
C/W
Max. Junction Temperature
TJ
-
-65 to +175
C
Max. Storage Temperature
Tstg
-
-65 to +175
C
Electrical Characteristics Per Leg
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
VF1
@ 7.5 A, Pulse, TJ = 25 C
0.58
V
VF2
@ 7.5 A, Pulse, TJ = 125 C
0.48
V
Max. Reverse Current
IR1
@VR = 30 V, Pulse,
TJ = 25 C
1
mA
IR2
@VR = 30 V, Pulse,
TJ = 125 C
50
mA
Max. Junction Capacitance
CT
@VR = 5V, TC = 25 C
fSIG = 1MHz,
VSIG = 50mV (p-p)
550
pF
SHD126111
SHD126111P
SHD126111N
SHD126111D
2006 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com
SENSITRON
TECHNICAL DATA
DATASHEET 4751, REV. B
Mechanical Dimensions: In Inches / mm
1 2 3
.200
.190 (5.08
4.82)
.045
.035 (1.14
0.89)
.120(3.05) BSC
.430
.410 (10.92
10.41)
.420
.410 (10.67
10.41)
.665
.645 (16.89
16.38)
.537
.527 (13.64
13.39)
1.132
1.032 (28.75
26.21)
.035
.025 (0.89
0.63)
3 Places
.100(2.54) BSC
2 Places
.150
.140 (3.81
3.56) Dia.
TO-257
DEVICE TYPE
PIN 1
PIN 2
PIN 3
SINGLE RECTIFIER
CATHODE
ANODE
ANODE
COMMON CATHODE (P)
ANODE 1
COMMON CATHODE
ANODE 2
COMMON ANODE (N)
CATHODE 1
COMMON ANODE
CATHODE 2
DOUBLER (D)
ANODE
CATHODE / ANODE
CATHODE
SHD126111
SHD126111P
SHD126111N
SHD126111D
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Forward Voltage Drop - VF (V)
10-1
100
101
Instantaneous Forward Current - IF (A)
Typical Forward Characteristics
125 °C
150 °C
25 °C
010 20 30 40
Reverse Voltage - VR (V)
10-2
10-1
100
101
102
Instantaneous Reverse Current - IR (mA)
Typical Reverse Characteristics
25 °C
50 °C
75 °C
100 °C
125 °C
150 °C
010 20 30 40
Reverse Voltage - VR (V)
300
350
400
450
500
Junction Capacitance - CT (pF)
Typical Junction Capacitance
2006 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com
SENSITRON
TECHNICAL DATA
DATASHEET 4751, REV. B
Note: Vf characteristics are for unpackaged die only.
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
SHD126111
SHD126111P
SHD126111N
SHD126111D
