July 19, 1994
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2LFL (S036)
hermetically sealed
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.5:1 VSWR CAPABILITY @ 1.75 dB RF
OVERDRIVE
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.POUT =250 W MIN. WITH 8.0 dB GAIN
DESCRIPTION
The SD8250 is a high power Class C transistor
specifically designed for TACAN/DME pulsed out-
put and driver applications.
This device is designed for operation under mod-
erate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 output VSWR
at rated RF overdrive.
Low RF thermal resistance and computerized au-
tomatic wire bonding techniques ensure high re-
liability and product consistency.
The SD8250 is supplied in the AMPACHermetic
Metal/Ceramic package with internal Input/Output
matching structures.
PIN CONNECTION
BRANDING
STAN250A
ORDER CODE
SD8250
ABSOLUTE MAXIMUM RATINGS (Tcase =25°C)
Symbol Parameter Value Unit
PDISS Power Dissipation* (TC≤90°C) 575 W
ICDevice Current* 20 A
VCC Collector-Supply Voltage* 55 V
TJJunction Temperature (Pulsed RF Operation) 250 °C
TSTG Storage Temperature −65 to +200 °C
RTH(j-c) Junction-Case Thermal Resistance(1) 0.28 °C/W
*Applies only to rated RFamplifier operation
(1) Infra-RedScan ofHot Spot Junction Temperature at Rated RF Operating Conditions
SD8250
1. Collector 3. Emitter
2. Base 4. Base
THERMAL DATA
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