BC636/638/640 BC636/638/640 Switching and Amplifier Applications * Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCER VCES VCEO Parameter Collector-Emitter Voltage at RBE=1K : BC636 : BC638 : BC640 Value Units -45 -60 -100 V V V : BC636 : BC638 : BC640 -45 -60 -100 V V V : BC636 : BC638 : BC640 -45 -60 -80 V V V Collector-Emitter Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A ICP Peak Collector Current -1.5 A IB Base Current -100 mA PC Collector Dissipation 1 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC636 : BC638 : BC640 Test Condition IC= -10mA, IB=0 Min. Typ. Max. -45 -60 -80 Units V V V ICBO Collector Cut-off Current VCB= -30V, IE=0 -0.1 A IEBO Emitter Cut-off Current VEB= -5V, IC=0 -0.1 A hFE1 hFE2 DC Current Gain VCE= -2V, IC= -5mA VCE= -2V, IC= -150mA hFE3 : All : BC636 : BC638/BC640 : All VCE= -2V, IC= -500mA 25 40 40 25 250 160 VCE (sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.5 V VBE (on) Base-Emitter On Voltage VCE= -2V, IC= -500mA -1 V fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=50MHz (c)2000 Fairchild Semiconductor International 100 MHz Rev. A, February 2000 BC636/638/640 Typical Characteristics -500 1000 VCE = - 2V IB = - 1.6 mA -400 IB = - 1.4 mA IB = - 1.2 mA IB = - 1.0 mA -300 IB = - 0.8 mA IB = - 0.6 mA -200 IB = - 0.4 mA -100 IB = - 0.2 mA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB = - 1.8 mA -0 100 10 -0 -10 -20 -30 -40 -50 -1 -100 -1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain -10 -1000 IC = 10 IB IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 V BE(sat) -1 -0.1 VCE(sat) -0.01 VCE = - 2V -100 -10 -1 -1 -10 -100 -1000 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 Cob[pF], CAPACITANCE f=1MHz 10 1 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance (c)2000 Fairchild Semiconductor International Rev. A, February 2000 BC636/638/640 Package Demensions TO-92 +0.25 4.58 0.20 4.58 -0.15 0.10 14.47 0.40 0.46 1.27TYP [1.27 0.20] 1.27TYP [1.27 0.20] 0.20 (0.25) +0.10 0.38 -0.05 1.02 0.10 3.86MAX 3.60 +0.10 0.38 -0.05 (R2.29) Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2000 Fairchild Semiconductor International Rev. E