TLP521GB, TLP521-2GB, TLP521-4GB, TLP521, TLP521-2, TLP521-4 TLP521XGB, TLP521-2XGB, TLP521-4XGB TLP521X, TLP521-2X, TLP521-4X HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 TLP521 FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio ( 50% min) l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High BVCEO ( 55Vmin ) l All electrical parameters 100% tested l Custom electrical selections available 4 3 1.2 5.08 4.08 BSI approved - Certificate No. 8001 DESCRIPTION The TLP521, TLP521-2, TLP521-4 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages. 1 2 7.0 6.0 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 l Dimensions in mm 2.54 7.62 4.0 3.0 13 Max 0.5 3.0 TLP521-2 0.5 0.26 3.35 2.54 7.0 6.0 1 8 2 3 7 1.2 10.16 9.16 7.62 4.0 3.0 13 Max 0.5 3.0 0.26 3.35 0.5 APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances 1 TLP521-4 3 4 2.54 OPTION G 7.62 SURFACE MOUNT 1.2 20.32 19.32 0.6 0.1 10.46 9.86 1.25 0.75 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/4/03 13 5 12 6 11 7 8 10 9 7.62 4.0 3.0 13 Max 0.5 0.26 10.16 16 15 14 2 7.0 6.0 OPTION SM 6 5 4 0.5 3.35 0.26 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB92546m-AAS/A3 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 125C Operating Temperature -30C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 55V 6V 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C) ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) Input PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) 1.0 1.15 Reverse Current (IR) Output Coupled Collector-emitter Breakdown (BVCEO) 55 ( Note 2 ) Emitter-collector Breakdown (BVECO) 6 Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (Note 2) TLP521, TLP521-2, TLP521-4 CTR selection available BL GB GB Input-output Isolation Resistance RISO Response Time (Rise), tr Response Time (Fall), tf Note 1 Note 2 7/4/03 V IF = 10mA 10 A VR = 4V V IC = 0.5mA V nA IE = 100A VCE = 20V % % % % 5mA IF , 5V VCE V V 8mA IF , 2.4mA IC 1mA IF , 0.2mA IC VRMS VPK s s See note 1 See note 1 VIO = 500V (note 1) VCE = 2V , IC = 2mA, RL = 100 600 600 600 Collector-emitter Saturation VoltageVCE (SAT) -GB Input to Output Isolation Voltage VISO 1.3 100 50 200 100 30 0.4 0.4 5300 7500 5x1010 4 3 TEST CONDITION 1mA IF , 0.4V VCE Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB92546m-AAS/A3 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Low Collector-emitter Voltage TA = 25C 25 Collector current IC (mA) Collector power dissipation PC (mW) 200 150 100 50 0 15 50 40 30 20 10 10 5 20 5 IF = 2mA 0 -30 0 25 50 75 100 0 125 Ambient temperature TA ( C ) 0.2 50 50 1.0 TA = 25C 30 Collector current IC (mA) 50 Forward current IF (mA) 0.8 Collector Current vs. Collector-emitter Voltage 60 40 30 20 10 0 20 40 15 30 10 20 10 IF = 5mA 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( C ) 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature Current Transfer Ratio vs. Forward Current 320 0.28 0.24 Current transfer ratio CTR (%) Collector-emitter saturation voltage VCE(SAT) (V) 0.6 Collector-emitter voltage VCE ( V ) Forward Current vs. Ambient Temperature IF = 5mA IC = 1mA 0.20 0.16 0.12 0.08 0.04 280 240 200 160 120 80 VCE = 5V TA = 25C 40 0 0 -30 0 25 50 75 Ambient temperature TA ( C ) 7/4/03 0.4 100 1 2 5 10 20 50 Forward current IF (mA) DB92546m-AAS/A3