1. Product profile
1.1 General description
Unidirectional ESD protection diode in a SOD523 plastic package designed to protect one
transmission or data line from the damage caused by ESD (ElectroStatic Discharge) and
other transients.
1.2 Features
nUnidirectional ESD protection of one line
nMax. peak pulse power: PPP = 330 W at tp = 8/20 µs
nLow clamping voltage: VCL = 20 V at IPP = 18 A
nUltra low leakage current: IRM < 700 nA
nESD protection > 23 kV
nIEC 61000-4-2, level 4 (ESD)
nIEC 61000-4-5 (surge); IPP = 18 A at tp = 8/20 µs
1.3 Applications
nComputers and peripherals
nCommunication systems
nAudio and video equipment
nData lines
nCAN bus protection
1.4 Quick reference data
PESDxS1UB series
ESD protection diodes in SOD523 package
Rev. 02 — 24 August 2009 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Value Unit
VRWM reverse standoff voltage
PESD3V3S1UB 3.3 V
PESD5V0S1UB 5 V
PESD12VS1UB 12 V
PESD15VS1UB 15 V
PESD24VS1UB 24 V
PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 August 2009 2 of 15
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
4. Marking
Cddiode capacitance VR = 0 V; f = 1 MHz
PESD3V3S1UB 207 pF
PESD5V0S1UB 152 pF
PESD12VS1UB 38 pF
PESD15VS1UB 32 pF
PESD24VS1UB 23 pF
number of protected
lines 1
Table 1. Quick reference data
…continued
Symbol Parameter Conditions Value Unit
Table 2. Discrete pinning
Pin Description Simplified outline Symbol
1 cathode [1]
2 anode 21
sym035
12
Table 3. Ordering information
Type number Package
Name Description Version
PESDxS1UB SC -79 plastic surface mounted package; 2 leads SOD523
Table 4. Marking
Type number Marking code
PESD3V3S1UB N1
PESD5V0S1UB N2
PESD12VS1UB N3
PESD15VS1UB N4
PESD24VS1UB N5
PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 August 2009 3 of 15
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package
5. Limiting values
[1] Non-repetitive current pulse 8/20 µs exponentially decay waveform; see Figure 1.
[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
PPP peak pulse power 8/20 µs[1]
PESD3V3S1UB - 330 W
PESD5V0S1UB - 260 W
PESD12VS1UB - 180 W
PESD15VS1UB - 160 W
PESD24VS1UB - 160 W
IPP peak pulse current 8/20 µs[1]
PESD3V3S1UB - 18 A
PESD5V0S1UB - 15 A
PESD12VS1UB - 5 A
PESD15VS1UB - 5 A
PESD24VS1UB - 3 A
Tjjunction temperature - 150 °C
Tamb operating ambient
temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
ESD electrostatic discharge
capability IEC 61000-4-2
(contact discharge) [1]
PESD3V3S1UB - 30 kV
PESD5V0S1UB - 30 kV
PESD12VS1UB - 30 kV
PESD15VS1UB - 30 kV
PESD24VS1UB - 23 kV
PESDxS1UB series HBM MIL-STD883 - 10 kV
Table 7. ESD standards compliance
Standard Conditions
IEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact)
HBM MIL-STD883, class 3 > 4 kV
PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 August 2009 4 of 15
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5 Fig 2. ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2
t (µs)
0403010 20
001aaa630
40
80
120
IPP
(%)
0
e−t
100 % IPP; 8 µs
50 % IPP; 20 µs
001aaa631
IPP
100 %
90 %
t
30 ns 60 ns
10 %
tr = 0.7 ns to 1 ns
PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 August 2009 5 of 15
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package
6. Characteristics
Table 8. Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage
PESD3V3S1UB - - 3.3 V
PESD5V0S1UB - - 5 V
PESD12VS1UB - - 12 V
PESD15VS1UB - - 15 V
PESD24VS1UB - - 24 V
IRM reverse leakage current see Figure 7
PESD3V3S1UB VRWM = 3.3 V - 0.7 2 µA
PESD5V0S1UB VRWM = 5 V - 0.1 1 µA
PESD12VS1UB VRWM = 12 V - < 1 50 nA
PESD15VS1UB VRWM = 15 V - < 1 50 nA
PESD24VS1UB VRWM = 24 V - < 1 50 nA
VBR breakdown voltage IR = 5 mA
PESD3V3S1UB 5.2 5.6 6.0 V
PESD5V0S1UB 6.4 6.8 7.2 V
PESD12VS1UB 14.7 15.0 15.3 V
PESD15VS1UB 17.6 18.0 18.4 V
PESD24VS1UB 26.5 27.0 27.5 V
Cddiode capacitance VR = 0 V; f = 1 MHz;
see Figure 5 and 6
PESD3V3S1UB - 207 300 pF
PESD5V0S1UB - 152 200 pF
PESD12VS1UB - 38 75 pF
PESD15VS1UB - 32 70 pF
PESD24VS1UB - 23 50 pF
V(CL)R clamping voltage [1]
PESD3V3S1UB IPP = 1 A - - 7 V
IPP = 18 A - - 20 V
PESD5V0S1UB IPP = 1 A - - 9 V
IPP = 15 A - - 20 V
PESD12VS1UB IPP = 1 A - - 19 V
IPP = 5A - - 35 V
PESD15VS1UB IPP = 1 A - - 23 V
IPP = 5 A - - 40 V
PESD24VS1UB IPP = 1 A - - 36 V
IPP = 3 A - - 70 V
PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 August 2009 6 of 15
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package
[1] Non-repetitive current pulse 8/20 µs exponentially decay waveform; see Figure 1.
Rdiff differential resistance
PESD3V3S1UB IR = 1 mA - - 400 Ω
PESD5V0S1UB IR = 1 mA - - 80 Ω
PESD12VS1UB IR = 1 mA - - 200 Ω
PESD15VS1UB IR = 1 mA - - 225 Ω
PESD24VS1UB IR = 0.5 mA - - 300 Ω
Table 8. Characteristics
…continued
T
amb
= 25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 August 2009 7 of 15
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package
Tamb = 25 °C
tp = 8/20 µs exponentially decay waveform,
see Figure 1
(1) PESD3V3S1UB and PESD5V0S1UB
(2) PESD12VS1UB, PESD15VS1UB; PESD24VS1UB
Fig 3. Peak pulse power dissipation as a function of
pulse time; typical values Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values
f = 1 MHz; Tamb = 25 °C
(1) PESD3V3S1UB
(2) PESD5V0S1UB
f = 1 MHz; Tamb = 25 °C
(1) PESD12VS1UB
(2) PESD15VS1UB
(3) PESD24VS1UB
Fig 5. Diode capacitance as a function of reverse
voltage; typical values Fig 6. Diode capacitance as a function of reverse
voltage; typical values
001aaa147
103
102
104
Ppp
(W)
10
tp (µs)
110
4
103
10 102
(1)
(2)
Tj (°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
PPP
0
PPP(25°C)
VR (V)
054231
001aaa148
120
160
80
200
240
Cd
(pF)
40
(1)
(2)
VR (V)
0252010 155
001aaa149
20
30
10
40
50
Cd
(pF)
0
(1)
(3)
(2)
PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 August 2009 8 of 15
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package
(1) PESD3V3S1UB; VRWM = 3.3 V
PESD5V0S1UB; VRWM = 5 V
IR is less than 10 nA at 150 °C for:
PESD12VS1UB; VRWM = 12 V
PESD15VS1UB; VRWM = 15 V
PESD24VS1UB; VRWM = 24 V
Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values
001aaa270
1
10
10−1
Tj (°C)
−100 150100050−50
IR
IR(25˚C)
(1)
PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 August 2009 9 of 15
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package
Fig 8. ESD clamping test setup and waveforms
006aaa001
50 Ω
RZ
CZ1
2
D.U.T.: PESDxS1UB
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network) clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network) clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
vertical scale = 20 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div vertical scale = 10 V/div
horizontal scale = 50 ns/div
GND
GND
GND
GND
450 ΩRG 223/U
50 Ω coax
ESD TESTER
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
GND
GND
GND
GND
PESD24VS1UB
PESD15VS1UB
PESD12VS1UB
PESD5V0S1UB
PESD3V3S1UB
PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 August 2009 10 of 15
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package
7. Application information
The PESDxS1UB series is designed for unidirectional protection of one single data line
from the damage caused by ESD (ElectroStatic Discharge) and Surge Pulses. The
PESDxS1UB series may be used on lines where the signal polarity is above or below
ground. The PESDxS1UB series provides a surge capability of up to 330 Watts per line for
a 8/20 µs waveform.
Circuit board layout and protection device placement:
Circuit board layout is critical for the suppression of ESD, EFT and Surge transients.
The following guidelines are recommended:
1. Place the protection device as close to the input terminal or connector as possible.
2. The path length between the protection device and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protection conductors in parallel with unprotected conductor.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
Fig 9. Unidirectional protection of one line
006aaa002
ground
line to be protected
(positive signal polarity)
PESDxS1UB
uni-directional protection of one line
ground
line to be protected
(negative signal polarity)
PESDxS1UB
PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 August 2009 11 of 15
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package
8. Package outline
Fig 10. Package outline
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOD523 SC-79 02-12-13
06-03-16
Plastic surface-mounted package; 2 leads SOD523
0 0.5 1 mm
scale
D
12
HE
Ebp
A
c
vMA
A
UNIT bpcDEv
mm
AH
E
DIMENSIONS (mm are the original dimensions)
Note
1. The marking bar indicates the cathode.
(1) 0.34
0.26 0.17
0.11 0.1
0.85
0.75
1.25
1.15
0.65
0.58 1.65
1.55
PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 August 2009 12 of 15
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package
9. Packing information
[1] For further information see Section 12.
Table 9. Possible packing methods
The indicated -xxx are the last three digits of the 12 NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
PESD3V3S1UB SOD523 4 mm pitch, 8 mm tape and reel −115 −135
PESD5V0S1UB SOD523 4 mm pitch, 8 mm tape and reel −115 −135
PESD12VS1UB SOD523 4 mm pitch, 8 mm tape and reel −115 −135
PESD15VS1UB SOD523 4 mm pitch, 8 mm tape and reel −115 −135
PESD24VS1UB SOD523 4 mm pitch, 8 mm tape and reel −115 −135
PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 August 2009 13 of 15
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package
10. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESDXS1UB_SERIES_2 20090824 Product data - PESDXS1UB_SERIES_1
Modifications: •This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•Figure 10 “Package outline”: updated
PESDXS1UB_SERIES_1 20040614 Product data - -
PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 August 2009 14 of 15
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 August 2009
Document identifier: PESDXS1UB_SERIES_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Application information. . . . . . . . . . . . . . . . . . 10
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Packing information. . . . . . . . . . . . . . . . . . . . . 12
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12 Contact information. . . . . . . . . . . . . . . . . . . . . 14
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
