MOSPOWER Selector Guide (Continued) N-Channel MOSPOWER (continued) . Breakdown Ip Power Device Voltage (Omen Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 100 0.055 40.0 150 IRF150 100 0.08 33.0 150 IRF152 100 0.085 27.0 125 IRF140 100 0.11 24.0 125 IRF 142 100 0.18 14.0 100 VN1000A 100 0.18 14.0 75 IRF130 100 0.25 12.0 100 VN1001A 100 0.25 12.0 75 IRF 132 100 0.3 8.0 40 (RF 120 100 0.4 7.0 40 IRF122 90 4.0 1.9 25 2N6658 90 45 1.8 25 VNSSAA e; 90 5.0 1.7 25 VNSOAA 80 0.18 14.0 100 VNQ8B00A Ee 80 0.25 12.0 100 VNO0801A 60 0.055 40.0 150 IRF 151 TO-3 60 0.08 33.0 150 IRF153 60 0.085 27.0 125 IRF141 60 0.11 24.0 125 IRF143 60 0.12 18.0 100 VNOGO0A 60 0.15 16.0 100 VNOGOTA 60 0.18 14.0 75 IRF131 60 0.25 12.0 75 IRF133 60 0.3 8.0 40 IRF121 60 0.4 10.0 80 VN64GA 60 0.4 7.0 40 IRF123 60 3.0 2.0 25 2N6657 60 3.5 2.0 25 VNG6G7AA 40 0.12 18.0 100 VNO400A 40 0.15 16.0 100 VNO401A 35 1.8 2.0 25 2N6656 35 25 2.0 25 VN35AA 500 0.85 8.0 125 (RF840 500 1.10 7.9 125 IRF842 500 1.5 45 75 VN5001D 500 1.5 45 75 IRF830 500 2.0 4.0 75 VN5002D 500 2.0 4.0 75 IRF832 500 3.0 25 40 IRF820 500 4.0 2.0 40 IRF822 450 0.85 8.0 125 IRF841 450 1.10 7.0 125 IRF843 450 1.5 45 75 VN4501D 450 1.5 45 75 IRF831 450 2.0 4.0 75 VN4502D 450 2.0 4.0 75 IRF833 450 3.0 2.5 40 IRF821 450 4.0 2.0 40 IRF823 400 0.55 10.0 125 IRF740 TO-220AB 400 0.80 8.0 125 IRF742 400 1.0 6.0 75 VN4000D 400 1.0 55 75 t{RF730 400 1.5 5.0 75 VN4001D 400 1.5 45 75 IRF732 400 1.8 3.0 40 IRF720 400 2.5 2.5 40 IRF722 350 0.55 10.0 425 IRF741 350 0.80 8.0 125 IRF743 350 1.0 6.0 75 VN3500D 350 1.0 55 75 IRF731 350 1.5 5.0 75 VN3501D 350 1.5 45 75 IRF733 350 1.8 3.0 40 IRF721 350 25 25 40 IRF723 240 6.0 1.4 20 VN2406D Siliconix 1-5 SPINS 10P9/SG YIMOdSOW IArea AN IKFO4) IKFO42 iIRF841 IRF440 = IRF444 = IRF442 IRF443 _=-. 2s IKFO4U IRF440 = IRF4441 IRF442 IRF443 gs IRF840 = IRF844 = IRF842 = IRF8&43 Siliconix Advanced Information 5OOV) N-Channel Enhancement Mode These power FETs are designed especially for off-line switching regulators, converters, solenoid and relay drivers. Product Summary FEATURES neat, | BYoss | Rosiom | tp Package a High Voltage IRF440 500V a No Second Breakdown TAFa41 soy | 88 BOA a High Input Impedance arase 500V TOS u Internal Drain-Source Diode IRF443 ov | | 10% | 7A m Very Rugged: Excellent SOA IRFB40 500V a Extremely Fast Switching 0.852 | 8.0A rose BENEFITS areas aso 1.102 | 7.0A a Reduced Component Count a Improved Performance a Simpler Designs J a improved Reliability so s ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage Drain Current IRF440, 442, 840, 842 0.0... cece ce cere ee ee en ete ees 500V Pulsed (80us to 300us, 1% duty cycle).........-..... t32A IRF441, 443, B41, B43 -..... eee eeeee cere crete nee ener eens 450V Gate Current (Peak) ..........cc cece eee eee e ener ere ence nee +3A Drain-Gate Voltage _ Vv IRF440, 442, 840, 842 ......ccccccecececevevseseseseeveeees 500V Gate-Source Voltage ......... ccc cece cece eee nner ett e en es + 40V IRF441, 443, 841, 843 200. ccc ccc cence rene eee 450V Total Power Dissipation ......5..... cc cceee eevee ee ee en ennee 125W Linear Derating Factor .............:ee eects teen eens 1.0W?C Drain Current Continuous" Operating and Storage IPFA40, 441, 840, 841 cee ceccceccesceeseeseeseecseneens 8A Temperature ------sserreersereeersrresrcess 55C to + 150C IRF442, 443, 842, 843 2.2.0... cece cece e tenn ete tees +7A Notes: 1. Limited by package dissipation. PACKAGE DIMENSIONS 5 Fr 230 po Ey = ea 5 | 8 oe 04 iaaze) MAX ~ | 63) 4 qT T 0.043 1.092) $9392 SEATING 0038/0965) MN j-$90 12.70) PLANE 1187 wna vn fs8t 8) i (4. a 0.675 (17.145) |b t77 (29.6896) (6.35) 0.655 (16.637) La ore | ma ago (71.176) | fn | ? \ a (iby j 0420 (70.668) Ye WN = _ 0.161 (4.089) 045 (1.15, f ads nl ; oe 73.855) 1 as _ J om 0.205 (5.207) BOTTOM VIEW 113.335) R MAX _ (423) __t PIN 1 Gate TO-3 PIN 1 Gate TO-220AB PIN 2 Source PIN 2 & TAB Drain CASE Drain PIN 3 Source 2-30 Siliconix ELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise noted) Part T Parameter Number Min Typ Max Unit est Conditions Static IRF440, 442 | 4, Drain-Source Breakdown IRF840, 842 BV, Ves =0, lp = 250uA OSS Voltage IRF441,443 | 4.0 Vv es=h ose IRF841, 843 Vestn) Gate Threshold Voltage All 2.0 3.3 4.0 v Vos= Ves, lp=1 mA lass Gate-Body Leakage All ; 10 +100 nA Veg = + 20V, Vos =0 \ Zero Gate Voltage Drain All 0.1 | 0.25 mA Vos =Rated Vos Vag = OV OSS Current 02 | 10 Vig = Rated Ving Vag = OV, T= 125C Ipjon) =: ON-State Drain Current All 8.0 A Vps = 25V, Ves = 10V (Note 1) IRF 440, 441 Static Drain-Source On-State | _!RF840, 841 08 | 085 Fosion) , 2 | Vag =10V, Ip = 4A (Note 1) Resistance IRF442, 443 0 IRF842, 843 1.00 | 11 Dynamic Dts Forward Transconductance All 4.0 6.5 Ss Vos = 25V, Ip =4A (Note 1) Ciss Input Capacitance 1225 | 1600 Coss Output Capacitance All 200 350 pF Ves = 0, Vos = 25V, f= 1 MHz Cres Reverse Transfer Capacitance 85 150 : tavon) Turn-On Delay Time All 17 35 ty Rise Time All 5 15 ng | Yoo 200V, 1p 4A, R, = 802, Ry = 102 tary Turn-Off Delay Time All 42 90 Veg= 10V (Fig. 1) ty Fall Time All 14 30 Drain-Source Diode Characteristics Vsp Forward On Voltage Alt -2.0 Vv ls =8A, Vag = 0 (Note 1) ter Reverse Recovery Time All 800 ns lp =-8A, Veg =0, di/dt = 100A/us (Fig. 2) Note 1: Pulse test 80 us to 300 us, 1% duty cycle FIGURE 1 Switching Test Circuit FIGURE 2 JEDEC Reverse Recovery Circult WA 50.2 di/dt Adjust . (1 = 27 WH) _ | Zt $10 50uF ~ IN4933 2 7 - i(pkyAdiust > | \ Rgen 6 I I ~ 4 | i j + 1N4Q01 | | 400uF == OS 4 - < | | | jj clReuiT = | R$ 0252 PULSE UNDER L $ 0.01uH [GENERATOR] [TEST _! PW. = 1 ys Cg < 50 pF Lerman. . La. WA DUTY CYCLE = 1% 1N4723 | 7 anez04 . SCOPE . FROM TRIGGER CKT Siliconix 2431 eveidl = cyeidl = breddl = Oedal eyridl = cyvidl = bWrsdl = Ovrial