DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3479 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3479 TO-220AB 2SK3479-S TO-262 2SK3479-ZJ TO-263 2SK3479-Z TO-220SMDNote designed for high current switching applications. FEATURES * Super low on-state resistance: RDS(on)1 = 11 m MAX. (VGS = 10 V, ID = 42 A) Note TO-220SMD package is produced only RDS(on)2 = 13 m MAX. (VGS = 4.5 V, ID = 42 A) in Japan. * Low Ciss: Ciss = 11000 pF TYP. (TO-220AB) * Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 100 V Gate to Source Voltage (VDS = 0 V) VGSS 20 V Drain Current (DC) (TC = 25C) ID(DC) 83 A ID(pulse) 332 A Total Power Dissipation (TC = 25C) PT1 125 W Total Power Dissipation (TA = 25C) PT2 1.5 W Channel Temperature Tch 150 C Drain Current (pulse) Note1 Tstg -55 to +150 C Single Avalanche Current Note2 IAS 65 A Single Avalanche Energy Note2 EAS 422 mJ Storage Temperature (TO-262) Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, RG = 25 , VGS = 20 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15077EJ1V0DS00 (1st edition) Date Published July 2001 NS CP(K) Printed in Japan (c) 2000, 2001 2SK3479 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10 A Gate Leakage Current IGSS VGS = 20 V, VDS = 0 V 10 A 2.5 V Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance VGS(off) VDS = 10 V, ID = 1 mA 1.5 | yfs | VDS = 10 V, ID = 42 A 37 RDS(on)1 VGS = 10 V, ID = 42 A 8.8 11 m RDS(on)2 VGS = 4.5 V, ID = 42 A 10 13 m 74 S Input Capacitance Ciss VDS = 10 V 11000 pF Output Capacitance Coss VGS = 0 V 1100 pF Reverse Transfer Capacitance Crss f = 1 MHz 540 pF Turn-on Delay Time td(on) VDD = 50 V, ID = 42 A 27 ns VGS = 10 V 18 ns RG = 0 140 ns 13 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 80 V 210 nC Gate to Source Charge QGS VGS = 10 V 26 nC Gate to Drain Charge QGD ID = 83 A 60 nC VF(S-D) IF = 83 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 83 A, VGS = 0 V 85 ns Reverse Recovery Charge Qrr di/dt = 100 A/s 280 nC Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% IAS VDS VDS ID Starting Tch = 1 s Duty Cycle 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 BVDSS RL VDD Data Sheet D15077EJ1V0DS td(on) tr ton td(off) tf toff 2SK3479 TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 150 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 0 20 40 60 80 100 125 100 75 50 25 0 120 140 160 20 40 60 80 100 120 140 160 TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) 100 0 d s ite V) 1 m im 10 ID(DC) L s 10 = n) P o o m S( GS Li we DC s m r RDat V ite Di ( d ss ip at 10 PW = 10 s io n 1 TC = 25C Single Pulse 0.1 0.1 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W ID - Drain Current - A 10 100 Rth(ch-A) = 83.3C/W 10 1 Rth(ch-C) = 1C/W 0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D15077EJ1V0DS 3 2SK3479 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 300 1000 Pulsed ID - Drain Current - A ID - Drain Current - A 250 100 TA = -40C 25C 75C 150C 10 1 VGS =10 V 200 4.5 V 150 100 50 0.1 1 2 3 VDS = 10 V 5 6 4 Pulsed 0 1 100 VDS = 10 V Pulsed 10 TA = 150C 75C 25C -40C 0.1 0.1 10 1 100 4 50 20 Pulsed 16 12 ID = 83 A 8 42 A 4 0 5 30 20 VGS = 4.5 V 10 V 20 VGS - Gate to Source Voltage - V 10 100 VDS = 10 V ID = 1 mA 2.5 2.0 1.5 1.0 0.5 0 1 15 3.0 40 0 10 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 10 5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate Cut-off Voltage - V RDS(on) - Drain to Source On-state Resistance - m ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - m | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 0.01 0.01 4 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V 1 3 2 1000 ID - Drain Current - A -50 0 50 100 150 Tch - Channel Temperature - C Data Sheet D15077EJ1V0DS 1000 25 ISD - Diode Forward Current - A Pulsed 20 VGS = 4.5 V 10 V 10 5 0 ID = 42 A -50 50 0 100 VGS = 10 V 0V 10 1 0.1 0 150 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1000 VGS = 0 V f = 1 MHz Ciss 1000 Coss Crss 1 10 100 tf td(off) 100 td(on) tr 10 VDD = 50 V VGS = 10 V RG = 0 1 0.1 REVERSE RECOVERY TIME vs. DRAIN CURRENT di/dt = 100 A/s VGS = 0 V 100 10 160 16 120 12 80 10 VDD = 80 V 50 V 20 V 8 VGS 40 4 VDS 0 1.0 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 1000 10 1 ID - Drain Current - A VDS - Drain to Source Voltage - V 1 0.1 1.5 1.0 0.5 Tch - Channel Temperature - C 10000 100 0.1 100 Pulsed 100 50 ID = 83 A 100 150 200 VGS - Gate to Source Voltage - V 15 100000 Ciss, Coss, Crss - Capacitance - pF SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-state Resistance - m 2SK3479 0 250 QG - Gate Charge - nC IF - Drain Current - A Data Sheet D15077EJ1V0DS 5 2SK3479 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 160 100 IAS = 65 A EAS =4 22 m J 10 VDD = 50 V RG = 25 VGS = 20 0 V 1 10 100 120 100 80 60 40 20 1m 10 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C L - Inductive Load - H 6 VDD = 50 V RG = 25 VGS = 20 0 V IAS 65 A 140 Energy Derating Factor - % IAS - Single Avalanche Current - A 1000 Data Sheet D15077EJ1V0DS 2SK3479 PACKAGE DRAWINGS (Unit: mm) TO-220AB(MP-25) 2) TO-262(MP-25 Fin Cut) 3.60.2 1.00.5 4.8 MAX. 10.6 MAX. 3.00.3 10 TYP. 1.30.2 4 4 1 1 2 3 12.7 MIN. 0.50.2 0.750.3 2.54 TYP. 0.50.2 0.750.1 2.54 TYP. 3 1.30.2 6.0 MAX. 1.30.2 2 1.30.2 8.50.2 15.5 MAX. 5.9 MIN. 10.0 TYP. 4.8 MAX. 12.7 MIN. 1) 2.80.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3) Note TO-263 (MP-25ZJ) 4) TO-220SMD(MP-25Z) 4.8 MAX. 10 TYP. 4.8 MAX. 10 TYP. 1.30.2 1.30.2 4 0 2.54 TYP. 2.80.2 TY . YP R 0.8 T 1.40.2 0.50.2 0.750.3 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 8.50.2 3 3.00.5 0.70.2 2.54 TYP. P. .5R 2 0 .5R P. P. TY TY R .8 2.54 TYP. 0 2.80.2 1.40.2 1 1.10.4 8.50.2 3 5.70.4 2 1.00.5 4 1.00.5 1 2.80.2 2.54 TYP. 0.50.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note This package is produced only in Japan. EQUIVALENT CIRCUIT Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, Body Diode Gate Gate Protection Diode an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Source Data Sheet D15077EJ1V0DS 7 2SK3479 * The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. 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