HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200221
Issued Date : 2002.08.01
Revised Date : 2004. 06.18
Page No. : 1/5
HTIP112A HSMC Product Specification
HTIP112A
SILICON NPN POWER DARLINGTON TRANSI STOR
• Monolithic Darlington Configuration
• Integrated Antiparallel Collector-Emitter Diode
Description
The devices is a sillcon Epitaxial-Base NPN transistor in monolithic Darlington
configuration mounted in TO-92 plastic package. It is intented for use in linear and
switching applications.
Applications
Linear and Switching Industrial Equipment
Absolute Maximum Ratings
Symbol Parameter Value Unit
VCBO Collector-Base Voltage(IE=0) 100 V
VCEO Collector-Emitter Voltage(IB=0) 100 V
VEBO Emitter-Base Voltage(IC=0) 5 V
ICCollector Current 2 A
ICM Collector Peak Current 4 A
IBBase Current 50 mA
Ptot Total Dissipation at Tamb=25oC1.2W
Tstg Storage Temperature -65 to 150 oC
Tj Max. Operating Junction Temperature 150 oC
Thermal Data
Rthj-amb Thermal Resistance Junction-ambient (Max.) 104 oC/W
Electrical Characteristics (Tcase=25°C, unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEO Collector Cut-off Current (IB=0) VCE=50V - - 2 mA
ICBO Collector Cut-off Current (IE=0) VCB=100V - - 1 mA
IEBO Emitter Cut-off Current (IC=0) VEB=5V - - 2 mA
VCE(sus) Collector-Emitter Sustaining Voltage
(IB=0) IC=30mA 100 - - V
*VCE(sat) Collector-Emitter Saturation Voltage IC=2A, IB=8mA - - 2.5 V
*VBE Base-Emitter Voltage IC=2A, VCE=4V - - 2.8 V
*hFE DC Current Gain IC=1A, VCE=4V
IC=2A, VCE=4V 1000
500 -
--
-
*Pulse Test: Pulse Width ≤380us, Dut y Cycle≤2%
TO-92
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200221
Issued Date : 2002.08.01
Revised Date : 2004. 06.18
Page No. : 2/5
HTIP112A HS MC Product Specification
Characteristics Curve
Saturation V oltage & C ollector Current
0.1
1
10
100
0.001 0.01 0.1 1 10
Coll e c tor Cur rent -I
C
(A)
Saturation Volta ge ( V)
V
CE(sat)
@ I
C
=100I
B
25
o
C
125
o
C
75
o
C
Saturation Volta ge & Collect or Cu rrent
0.1
1
10
100
0.001 0.01 0.1 1 10
Collector Curren t-I
C
(A)
Saturation Voltage (V)
V
CE(sat)
@ I
C
=250I
B
25
o
C
125
o
C
75
o
C
Saturation Volta ge & Collect or Cu rrent
0.01
0.1
1
10
0.001 0.01 0.1 1 10
Coll e c tor Curre nt -I
C
(A)
Satur a t ion Voltag e ( V)
V
BE(sat)
@ I
C
=250I
B
25
o
C
125
o
C75
o
C
ON Volt age & Coll cet or Curren t
0.1
1
10
0.001 0.01 0.1 1 10
Coll e c tor Curre nt -I
C
(A)
O N Voltage ( V)
V
BE(ON)
@ V
CE
=4V
25
o
C
125
o
C
75
o
C
Curr ent Gai n & Col l ector Cu rrent
0.01
0.1
1
10
100
0.001 0.01 0.1 1 10
Coll e c tor Curre nt -I
C
(A)
hFE (x 1000)
25
o
C
hFE @ V CE=4V
125
o
C
75
o
C
Current Gain & Collector Curre nt
0.01
0.1
1
10
0.001 0.01 0.1 1 10
Coll e c tor Curre nt -I
C
(A)
hFE (x10 00)
25
o
C
hFE @ VCE=3V
125
o
C75
o
C
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200221
Issued Date : 2002.08.01
Revised Date : 2004. 06.18
Page No. : 3/5
HTIP112A HS MC Product Specification
ON Voltage & Collcetor C ur ren t
0.1
1
10
0.001 0.01 0.1 1 10
Coll e c tor Curre nt -I
C
(A)
ON Voltage (V)
VBE(ON) @ VCE=3V
25
o
C
125
o
C
75
o
C
Capci ta nce & Rever se-Biased Volt age
10.0
100.0
0.1 1 10 100
R evers e Biased Voltage ( V)
Capacitanc e ( pF)
Cob
Safe Oper at ing Area
0.01
0.1
1
10
1 10 100 1000
Forward Vol t a ge ( V)
Collec tor Curr e n t-I
C
(A)
PT=1mS
PT=100mS
PT=1S
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200221
Issued Date : 2002.08.01
Revised Date : 2004. 06.18
Page No. : 4/5
HTIP112A HS MC Product Specification
TO-92 Dimension
TO-92 Taping Dimension
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Tai wan R.O.C.
Tel : 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al Pa rk Hsi n-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax: 886-3-5982931
31
A
D
B
C
Iα1
E
α2
α3
G
H
2
F
H2AH2A
H2H2 D2
A
H
W
W1
H3
H4
H1
L1
L
P2
P
P1
F1F2 D1 D
T2
T
T1
DIM Min. Max.
A 4.33 4.83
B 4.33 4.83
C 12.70 -
D 0.36 0.56
E-*1.27
F 3.36 3.76
G 0.36 0.56
H-*2.54
I-*1.27
α1-*5°
α2-*2°
α3-*2°
*: Typical, Unit: mm
3-Lead TO-92 Plastic Package
HSMC Package Code: A
DIM Min. Max.
A 4.33 4.83
D 3.80 4.20
D1 0.36 0.53
D2 4.33 4.83
F1,F2 2.40 2.90
H 15.50 16.50
H1 8.50 9.50
H2 - 1
H2A - 1
H3 - 27
H4 - 21
L-11
L1 2.50 -
P 12.50 12.90
P1 5.95 6.75
P2 50.30 51.30
T - 0.55
T1 - 1.42
T2 0.36 0.68
W 17.50 19.00
W1 5.00 7.00
Unit: mm
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
Control Code
Date Code
HP
112I
A
T
Note: Green label is used for pb-free packing
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200221
Issued Date : 2002.08.01
Revised Date : 2004. 06.18
Page No. : 5/5
HTIP112A HS MC Product Specification
Solderi ng Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate (TL to TP)<3
oC/sec <3oC/sec
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100oC
150oC
60~120 sec
150oC
200oC
60~180 sec
Tsmax to TL
- Ramp-up Rate <3oC/sec <3oC/sec
T ime mai n t a i n ed above:
- Temperature (TL)
- Ti me (tL)183oC
60~150 sec 217oC
60~150 sec
Peak Temperature (TP) 240oC +0/-5oC 260oC +0/-5oC
Time within 5oC of actual Peak
Temperature (tP)10~30 sec 20~40 sec
Ramp- down Rate <6oC/sec <6oC/sec
Time 25oC to Peak Temperature <6 minutes <8 minutes
3. Flow (wave) soldering (solder dipping)
Products Peak temperature Dipping time
Pb devices. 245oC ±5oC 5sec ±1sec
Pb-Free de vic es . 260oC +0/-5oC5sec ±1sec
Figure 1: Temperature prof ile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25 t 25
o
C to Peak
Time
Temperature
