Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
UMP11N
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Ultra high speed switching
Features
1) Small mold type. (UMD6)
2) High reliability.
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isurge A
Pd mW
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit
VF- - 1.2 V IF=100mA
IR- - 0.1 μAVR=70V
Ct - - 3.5 pF VR=6V , f=1MHz
trr - - 4 ns VR=6V , IF=5mA , RL=50Ω
Capacitance between terminals
Reverse recovery time
Parameter Conditions
Forward voltage
Reverse current
Storage temperature 55 to 150
Power dissipation 150
Junction temperature 150
Average retcified forward current 100
Surge current (t=1us) 4
Reverse voltage (DC) 80
Forward current (Single) 300
Parameter Limits
Reverse voltage (repetitive peak) 80
UMD6
0.35
0.9
1.6
0.650.65
2.2±0.1 4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.1
0
3.5±0.05 1.75±0.1
8.0±0.2
φ1.1±0.1
2.45±0.1
2.4±0.1
5.5±0.2
1.15±0.1
2.4±0.1
0.3±0.1
0～0.5
JEDEC : SOT-363
ROHM : UMD6
JEITA : SC-88
dot (year week factory)
2.0±0.2
2.1±0.1
1.25±0.1
0.25±
0.1
0.05
各リードとも
同寸法
(5)(6) (4)
1.3±0.1
0.65 0.65
(1) (3)(2)
0.15±0.05
0.9±0.1
0.7
0.1Min
0～0.1
Each lead has same dimension
1/2 2011.06 - Rev.B
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
UMP11N
0
1
2
3
4
5
6
7
8
9
10
AVE:1.93ns
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(ms)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=150℃
0.001
0.01
0.1
1
10
100
1000
10000
0 1020304050607080
Ta=-25℃
Ta=25℃
Ta=75℃
Ta=125℃
Ta=150℃
0.1
1
10
0 5 10 15 20
f=1MHz
850
860
870
880
890
900
AVE:870.1mV
Ta=25℃
IF=100mA
n=30pcs
0
10
20
30
40
50
60
70
80
90
100
Ta=25℃
VR=70V
n=10pcs
AVE:4.310nA
0
1
2
3
4
5
6
7
8
9
10
AVE:2.850pF
Ta=25℃
VR=0V
f=1MHz
n=10pcs
0
5
10
15
20
AVE:2.50A
8.3ms
Ifsm 1cyc
0
1
2
3
4
5
1 10 100
8.3ms
Ifsm
1cyc
8.3ms
1
10
100
0.1 1 10 100
t
Ifsm
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
0
1
2
3
4
5
6
7
8
9
10
AVE:1.47kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
AVE:2.98kV
2/2 2011.06 - Rev.B
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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